High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation
Summary :
High-frequency characteristics of SiGe heterojunction bipolar transistors with different emitter sizes are studied based on pulsed measurements. Because the self-heating effect in transistors will enhance the Kirk effect, as the devices operate in high current region, the measured cutoff frequency and maximum oscillation frequency decrease with measurement time in the pulsed duration. By analyzing the equivalent small-signal device parameters, we know the reduction of cutoff frequency and maximum oscillation frequency is attributed to the reduction of transconductance and the increase of junction capacitances for fixed base-emitter voltage, while it is only attributed to the degradation of transconductance for fixed collector current. Besides, the degradation of high-frequency performance due to self-heating effect would be improved with the layout design combining narrow emitter finger and parallel-interconnected subcells structure.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.5 pp.720-725
- Publication Date
- 2004/05/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
- Category
- Active Devices and Circuits
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Kun-Ming CHEN, Guo-Wei HUANG, Li-Hsin CHANG, Hua-Chou TSENG, Tsun-Lai HSU, "High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 5, pp. 720-725, May 2004, doi: .
Abstract: High-frequency characteristics of SiGe heterojunction bipolar transistors with different emitter sizes are studied based on pulsed measurements. Because the self-heating effect in transistors will enhance the Kirk effect, as the devices operate in high current region, the measured cutoff frequency and maximum oscillation frequency decrease with measurement time in the pulsed duration. By analyzing the equivalent small-signal device parameters, we know the reduction of cutoff frequency and maximum oscillation frequency is attributed to the reduction of transconductance and the increase of junction capacitances for fixed base-emitter voltage, while it is only attributed to the degradation of transconductance for fixed collector current. Besides, the degradation of high-frequency performance due to self-heating effect would be improved with the layout design combining narrow emitter finger and parallel-interconnected subcells structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_5_720/_p
Copy
@ARTICLE{e87-c_5_720,
author={Kun-Ming CHEN, Guo-Wei HUANG, Li-Hsin CHANG, Hua-Chou TSENG, Tsun-Lai HSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation},
year={2004},
volume={E87-C},
number={5},
pages={720-725},
abstract={High-frequency characteristics of SiGe heterojunction bipolar transistors with different emitter sizes are studied based on pulsed measurements. Because the self-heating effect in transistors will enhance the Kirk effect, as the devices operate in high current region, the measured cutoff frequency and maximum oscillation frequency decrease with measurement time in the pulsed duration. By analyzing the equivalent small-signal device parameters, we know the reduction of cutoff frequency and maximum oscillation frequency is attributed to the reduction of transconductance and the increase of junction capacitances for fixed base-emitter voltage, while it is only attributed to the degradation of transconductance for fixed collector current. Besides, the degradation of high-frequency performance due to self-heating effect would be improved with the layout design combining narrow emitter finger and parallel-interconnected subcells structure.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation
T2 - IEICE TRANSACTIONS on Electronics
SP - 720
EP - 725
AU - Kun-Ming CHEN
AU - Guo-Wei HUANG
AU - Li-Hsin CHANG
AU - Hua-Chou TSENG
AU - Tsun-Lai HSU
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2004
AB - High-frequency characteristics of SiGe heterojunction bipolar transistors with different emitter sizes are studied based on pulsed measurements. Because the self-heating effect in transistors will enhance the Kirk effect, as the devices operate in high current region, the measured cutoff frequency and maximum oscillation frequency decrease with measurement time in the pulsed duration. By analyzing the equivalent small-signal device parameters, we know the reduction of cutoff frequency and maximum oscillation frequency is attributed to the reduction of transconductance and the increase of junction capacitances for fixed base-emitter voltage, while it is only attributed to the degradation of transconductance for fixed collector current. Besides, the degradation of high-frequency performance due to self-heating effect would be improved with the layout design combining narrow emitter finger and parallel-interconnected subcells structure.
ER -
English
