IEICE TRANSACTIONS on Electronics
High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
Summary :
We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13 MΩ for a tail current of 10 nA and 135 MΩ for 1 nA. The chip area was 105 µm
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.6 pp.741-746
- Publication Date
- 2010/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.741
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
- Category
Authors
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Shin'ichi ASAI, Ken UENO, Tetsuya ASAI, Yoshihito AMEMIYA, "High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 6, pp. 741-746, June 2010, doi: 10.1587/transele.E93.C.741.
Abstract: We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13 MΩ for a tail current of 10 nA and 135 MΩ for 1 nA. The chip area was 105 µm
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.741/_p
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@ARTICLE{e93-c_6_741,
author={Shin'ichi ASAI, Ken UENO, Tetsuya ASAI, Yoshihito AMEMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair},
year={2010},
volume={E93-C},
number={6},
pages={741-746},
abstract={We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13 MΩ for a tail current of 10 nA and 135 MΩ for 1 nA. The chip area was 105 µm
keywords={},
doi={10.1587/transele.E93.C.741},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
T2 - IEICE TRANSACTIONS on Electronics
SP - 741
EP - 746
AU - Shin'ichi ASAI
AU - Ken UENO
AU - Tetsuya ASAI
AU - Yoshihito AMEMIYA
PY - 2010
DO - 10.1587/transele.E93.C.741
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2010
AB - We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13 MΩ for a tail current of 10 nA and 135 MΩ for 1 nA. The chip area was 105 µm
ER -
English
