IEICE TRANSACTIONS on Electronics
NbN Josephson Junctions for Single-Flux-Quantum Circuits
Summary :
We describe the fabrication processes and electrical characteristics of two types of NbN junctions. One is a self-shunted NbN/NbNx/AlN/NbN Josephson junction, which is expected to improve the density of integrated circuits; the other is an underdamped NbN/AlNx/NbN tunnel junction with radical-nitride AlNx barriers, which has highly controllable junction characteristics. In the former, the junction characteristics were changed from underdamped to overdamped by varying the thickness of the NbNx layer. Overdamped junctions with a 6-nm-thick NbNx film exhibited a characteristic voltage of Vc = 0.8 mV and a critical current density of Jc = 22 A/cm2 at 4.2 K. In the junctions with radical-nitride AlNx barriers, Jc could be controlled in the range 0.01-3 kA/cm2 by varying the process conditions, and good uniformity of the junction characteristics was obtained.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.3 pp.301-306
- Publication Date
- 2011/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.301
- Type of Manuscript
- Special Section PAPER (Special Section on Superconducting Signal Processing Technologies)
- Category
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Hiroyuki AKAIKE, Naoto NAITO, Yuki NAGAI, Akira FUJIMAKI, "NbN Josephson Junctions for Single-Flux-Quantum Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 3, pp. 301-306, March 2011, doi: 10.1587/transele.E94.C.301.
Abstract: We describe the fabrication processes and electrical characteristics of two types of NbN junctions. One is a self-shunted NbN/NbNx/AlN/NbN Josephson junction, which is expected to improve the density of integrated circuits; the other is an underdamped NbN/AlNx/NbN tunnel junction with radical-nitride AlNx barriers, which has highly controllable junction characteristics. In the former, the junction characteristics were changed from underdamped to overdamped by varying the thickness of the NbNx layer. Overdamped junctions with a 6-nm-thick NbNx film exhibited a characteristic voltage of Vc = 0.8 mV and a critical current density of Jc = 22 A/cm2 at 4.2 K. In the junctions with radical-nitride AlNx barriers, Jc could be controlled in the range 0.01-3 kA/cm2 by varying the process conditions, and good uniformity of the junction characteristics was obtained.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.301/_p
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@ARTICLE{e94-c_3_301,
author={Hiroyuki AKAIKE, Naoto NAITO, Yuki NAGAI, Akira FUJIMAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={NbN Josephson Junctions for Single-Flux-Quantum Circuits},
year={2011},
volume={E94-C},
number={3},
pages={301-306},
abstract={We describe the fabrication processes and electrical characteristics of two types of NbN junctions. One is a self-shunted NbN/NbNx/AlN/NbN Josephson junction, which is expected to improve the density of integrated circuits; the other is an underdamped NbN/AlNx/NbN tunnel junction with radical-nitride AlNx barriers, which has highly controllable junction characteristics. In the former, the junction characteristics were changed from underdamped to overdamped by varying the thickness of the NbNx layer. Overdamped junctions with a 6-nm-thick NbNx film exhibited a characteristic voltage of Vc = 0.8 mV and a critical current density of Jc = 22 A/cm2 at 4.2 K. In the junctions with radical-nitride AlNx barriers, Jc could be controlled in the range 0.01-3 kA/cm2 by varying the process conditions, and good uniformity of the junction characteristics was obtained.},
keywords={},
doi={10.1587/transele.E94.C.301},
ISSN={1745-1353},
month={March},}
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TY - JOUR
TI - NbN Josephson Junctions for Single-Flux-Quantum Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 301
EP - 306
AU - Hiroyuki AKAIKE
AU - Naoto NAITO
AU - Yuki NAGAI
AU - Akira FUJIMAKI
PY - 2011
DO - 10.1587/transele.E94.C.301
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2011
AB - We describe the fabrication processes and electrical characteristics of two types of NbN junctions. One is a self-shunted NbN/NbNx/AlN/NbN Josephson junction, which is expected to improve the density of integrated circuits; the other is an underdamped NbN/AlNx/NbN tunnel junction with radical-nitride AlNx barriers, which has highly controllable junction characteristics. In the former, the junction characteristics were changed from underdamped to overdamped by varying the thickness of the NbNx layer. Overdamped junctions with a 6-nm-thick NbNx film exhibited a characteristic voltage of Vc = 0.8 mV and a critical current density of Jc = 22 A/cm2 at 4.2 K. In the junctions with radical-nitride AlNx barriers, Jc could be controlled in the range 0.01-3 kA/cm2 by varying the process conditions, and good uniformity of the junction characteristics was obtained.
ER -
English
