Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design
Summary :
The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.3 pp.361-367
- Publication Date
- 2011/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.361
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Norio SADACHIKA
Shu MIMURA
Akihiro YUMISAKI
Kou JOHGUCHI
Akihiro KAYA
Mitiko MIURA-MATTAUSCH
Hans Jurgen MATTAUSCH
Keyword
Latest Issue
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Norio SADACHIKA, Shu MIMURA, Akihiro YUMISAKI, Kou JOHGUCHI, Akihiro KAYA, Mitiko MIURA-MATTAUSCH, Hans Jurgen MATTAUSCH, "Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 3, pp. 361-367, March 2011, doi: 10.1587/transele.E94.C.361.
Abstract: The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.361/_p
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@ARTICLE{e94-c_3_361,
author={Norio SADACHIKA, Shu MIMURA, Akihiro YUMISAKI, Kou JOHGUCHI, Akihiro KAYA, Mitiko MIURA-MATTAUSCH, Hans Jurgen MATTAUSCH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design},
year={2011},
volume={E94-C},
number={3},
pages={361-367},
abstract={The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.},
keywords={},
doi={10.1587/transele.E94.C.361},
ISSN={1745-1353},
month={March},}
Copy
TY - JOUR
TI - Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 361
EP - 367
AU - Norio SADACHIKA
AU - Shu MIMURA
AU - Akihiro YUMISAKI
AU - Kou JOHGUCHI
AU - Akihiro KAYA
AU - Mitiko MIURA-MATTAUSCH
AU - Hans Jurgen MATTAUSCH
PY - 2011
DO - 10.1587/transele.E94.C.361
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2011
AB - The long-standing problem of predicting circuit performance variations without a huge number of statistical investigations is demonstrated to be solvable by a surface-potential-based MOSFET model. Direct connection of model parameters to physical device parameters reflecting process variations and the reduced number of model parameters are the enabling key model properties. It has been proven that the surface-potential-based model HiSIM2 is capable of reproducing measured I-V and its derivatives' variations with those of device/process related model parameters. When used to predict 51-stage ring oscillator frequency variation including both inter- and intra-chip variation, it reproduces measurements with shortened simulation time.
ER -
English
