Highly Sensitive OBIRCH System for Fault Localization and Defect Detection

Kiyoshi NIKAWA; Shoji INOUE

Highly Sensitive OBIRCH System for Fault Localization and Defect Detection

Kiyoshi NIKAWA, Shoji INOUE

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We have improved the optical beam induced resistance change (OBIRCH) system so as to detect (1) a current path as small as 10-50 µA from the rear side of a chip, (2) current paths in silicide lines as narrow as 0. 2 µm, (3) high-resistance Ti-depleted polysilicon regions in 0. 2 µm wide silicide lines, and (4) high-resistance amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5 mm 5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.

Publication: IEICE TRANSACTIONS on Information Vol.E81-D No.7 pp.743-748

Publication Date: 1998/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Test and Diagnosis of VLSI)

Category: Beam Testing/Diagnosis

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Kiyoshi NIKAWA, Shoji INOUE, "Highly Sensitive OBIRCH System for Fault Localization and Defect Detection" in IEICE TRANSACTIONS on Information, vol. E81-D, no. 7, pp. 743-748, July 1998, doi: .
Abstract: We have improved the optical beam induced resistance change (OBIRCH) system so as to detect (1) a current path as small as 10-50 µA from the rear side of a chip, (2) current paths in silicide lines as narrow as 0. 2 µm, (3) high-resistance Ti-depleted polysilicon regions in 0. 2 µm wide silicide lines, and (4) high-resistance amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5 mm 5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.
URL: https://global.ieice.org/en_transactions/information/10.1587/e81-d_7_743/_p

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@ARTICLE{e81-d_7_743,
author={Kiyoshi NIKAWA, Shoji INOUE, },
journal={IEICE TRANSACTIONS on Information},
title={Highly Sensitive OBIRCH System for Fault Localization and Defect Detection},
year={1998},
volume={E81-D},
number={7},
pages={743-748},
abstract={We have improved the optical beam induced resistance change (OBIRCH) system so as to detect (1) a current path as small as 10-50 µA from the rear side of a chip, (2) current paths in silicide lines as narrow as 0. 2 µm, (3) high-resistance Ti-depleted polysilicon regions in 0. 2 µm wide silicide lines, and (4) high-resistance amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5 mm 5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Highly Sensitive OBIRCH System for Fault Localization and Defect Detection
T2 - IEICE TRANSACTIONS on Information
SP - 743
EP - 748
AU - Kiyoshi NIKAWA
AU - Shoji INOUE
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Information
SN -
VL - E81-D
IS - 7
JA - IEICE TRANSACTIONS on Information
Y1 - July 1998
AB - We have improved the optical beam induced resistance change (OBIRCH) system so as to detect (1) a current path as small as 10-50 µA from the rear side of a chip, (2) current paths in silicide lines as narrow as 0. 2 µm, (3) high-resistance Ti-depleted polysilicon regions in 0. 2 µm wide silicide lines, and (4) high-resistance amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5 mm 5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy.
ER -