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[Author] Kensuke NAKAJIMA(5hit)

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  • Flux Modulation Enhancement of dc-SQUID Based on Intrinsic Josephson Junctions Made of Bi2Sr2CaCuO8+δ Thin Films Open Access

    Kensuke NAKAJIMA  Hironobu YAMADA  Mihoko TAKEDA  

     
    INVITED PAPER

      Pubricized:
    2022/11/29
      Vol:
    E106-C No:6
      Page(s):
    289-292

    Direct-current superconducting quantum interference device (dc-SQUID) based on intrinsic Josephson junction (IJJ) has been fabricated using Bi2Sr2CaCu2O8+δ (Bi-2212) films grown on MgO substrates with surface steps. The superconducting loop parallel to the film surface across the step edge contains two IJJ stacks along the edge. The number of crystallographically stacked IJJ for each SQUIDs were 40, 18 and 3. Those IJJ SQUIDs except for one with 40 stacked IJJs revealed clear periodic modulation of the critical current for the flux quanta through the loops. It is anticipated that phase locking of IJJ has an effect on the modulation depth of the IJJ dc-SQUID.

  • Flux-Quantum Transitions in a Three-Junction SQUID Controlled by Two RF Signals

    Yoshinao MIZUGAKI  Jian CHEN  Kensuke NAKAJIMA  Tsutomu YAMASHITA  

     
    PAPER-Novel Devices and Device Physics

      Vol:
    E85-C No:3
      Page(s):
    803-808

    We present analytical and numerical results on the flux-quantum transitions in a three-junction superconducting quantum interference device (3J-SQUID) controlled by two RF signals. The 3J-SQUID has two superconducting loops, and the RF signals are magnetically coupled to the loops. Flux-quantum transitions in the 3J-SQUID loops can be controlled by utilizing the phase difference of the two RF signals. Under proper conditions, we can obtain a situation where one flux quantum passes through the 3J-SQUID per one cycle of the RF signals without DC current biasing, which results in a zero-crossing step on the current-voltage characteristics. In this paper, we first explain the operation principle by using a quantum state diagram of a 3J-SQUID. Next, we numerically simulate RF-induced transitions of the quantum states. A zero-crossing step on the current-voltage characteristics is demonstrated. We also investigate dependence of zero-crossing steps upon parameters of the 3J-SQUID and RF signals.

  • Intrinsic Josephson Junction Arrays on Bi2Sr2CaCu2O8+x Single Crystals and Their Possible Applications at 100 GHz

    Huabing WANG  Jian CHEN  Kensuke NAKAJIMA  Tsutomu YAMASHITA  Peiheng WU  

     
    PAPER-Analog Applications

      Vol:
    E84-C No:1
      Page(s):
    61-66

    C-axis junction-arrays, with a-b plane sizes of sub-microns to 10 microns, were patterned on Bi2Sr2CaCu2O8+x single crystals with either a mesa or an overlap structure. We measured the current-voltage (I-V) characteristics with microwave irradiation at a few to 100 gigahertz. At a few gigahertz, often observed were chaotic properties. Under irradiation at 100 GHz, we successfully performed harmonic mixings between the 100 GHz signal and up to the 100th harmonic of a local oscillator at about 1 GHz. Given in this paper are discussions on the observation of individual Shapiro steps, and descriptions of the relevant results. Our experimental results show that intrinsic Josephson junctions in layered superconductors can be good candidates for high frequency applications.

  • Si Substrate Resistivity Design for On-Chip Matching Circuit Based on Electro-Magnetic Simulation

    Masayoshi ONO  Noriharu SUEMATSU  Shunji KUBO  Kensuke NAKAJIMA  Yoshitada IYAMA  Tadashi TAKAGI  Osami ISHIDA  

     
    PAPER-Electromagnetics Simulation Techniques

      Vol:
    E84-C No:7
      Page(s):
    923-930

    For on-chip matching Si-MMIC fabricated on a conventional low resistivity Si substrate, the loss of on-chip inductors is quite high due to the dielectric loss of the substrate. In order to reduce the loss of on-chip matching circuit, the use of high resistivity Si substrate is quite effective. By using electro-magnetic simulation, the relationship between coplanar waveguide (CPW) transmission line characteristics and the resistivity of Si substrate is discussed. Based on the simulated results, the resistivity of Si substrate is designed to achieve lower dielectric loss than conductor loss. The effectiveness of high resistivity Si substrate is evaluated by the extraction of equivalent circuit model parameters of the fabricated on-chip spiral inductors and the measurement of the fabricated on-chip matching Si-MMIC LNA's.

  • Switching Device Based on RF-Field-Driven High-TC SQUID

    Tadayuki KONDO  Yoshinao MIZUGAKI  Kei SAITO  Kensuke NAKAJIMA  Tsutomu YAMASHITA  

     
    PAPER-SQUIDs

      Vol:
    E84-C No:1
      Page(s):
    55-60

    A voltage mode logic device based on RF-Field-driven DC-SQUID (RFDS) using high-TC superconducting Josephson junctions has been proposed. RFDS produces large RF-induced steps, and the orders of steps are strongly selected by DC magnetic flux crossing the SQUID loop superposing with RF magnetic field. In this paper, we present the experimental results of RFDS fabricated by using YBCO grain boundary Josephson junctions. The results are evaluated with numerical simulations. The enhancement of RF-induced steps, the strong selection of step orders and the switching performance are demonstrated.