This paper demonstrates a FinFET operational amplifier (opamp), which is suitable to be integrated with digital circuits in a scaled low-standby-power (LSTP) technology and operates at extremely low voltage. The opamp is consisting of an adaptive threshold-voltage (Vt) differential pair and a low-voltage source follower using independent-double-gate- (IDG-) FinFETs. These two components enable the opamp to extend the common-mode voltage range (CMR) below the nominal Vt even if the supply voltage is less than 1.0 V. The opamp was implemented by our FinFET technology co-integrating common-DG- (CDG-) and IDG-FinFETs. More than 40-dB DC gain and 1-MHz gain-bandwidth product in the 500-mV-wide input CMR at the supply voltage of 0.7 V was estimated with SPICE simulation. The fabricated chip successfully demonstrated the 0.7-V operation with the 480-mV-wide CMR, even though the nominal Vt was 400 mV.

The fabrication of InAlAs wire structures and InGaAs quantum wire structures on non-planer InP substrates with truncated ridges by molecular beam epitaxy is demonstrated. Indium-rich InAlAs epitaxial layers grown on top of ridges exhibit self-formation of electron-confining InAlAs wire structures. The InAlAs layers on top of the ridges lattice-matched to the substrate are obtained by the control of In flux during the growth. The InGaAs quantum wire structures have been fabricated on thus composition-controlled InAlAs barrier layers. The optical properties of the InGaAs quantum wires with composition-controlled InAlAs barrier layer are found to be better than that of the wires without compositional control.

The Flex Power FPGA is presented as a novel FPGA model offering the ability to configure the trade-off between power consumption and speed for each logic element by adjusting the threshold voltage. This FPGA model targets the reduction of static power consumption, which has become one of the most important issues in the development of future-generation devices. The present paper describes a preliminary simulation study of the Flex Power FPGA. A method to effectively assign threshold voltages to transistors at a prescribed granularity based on a timing analysis of the mapped circuit is implemented using the VPR simulator, and the static power reduction for 70 nm technologies is estimated using MCNC benchmark circuits. Simulation results show that the average static power can be reduced to as little as 1/30 of that in the corresponding conventional FPGA. This FPGA model is also demonstrated to be effective with future technologies, where the proportion of static power will be greater.

This paper describes a new design concept, the Body Bias Voltage Set (BBVS), and presents the effect of the BBVS on static power, operating speed, and area overhead in an FPGA with field-programmable Vth components. A Flex Power FPGA is an FPGA architecture to solve the static power problem by the fine grain field-programmable Vth control method. Since the Vth of transistors for specific circuit blocks in the Flex Power FPGA is chosen from a set of Vth values defined by a BBVS, selection of a particular BBVS is an important design decision. A particular BBVS is chosen by selecting body biases from among several supplied body bias candidates. To select the optimal BBVS, we provide 136 BBVSs and perform a thorough search. In a BBVS of less Vth steps, the deepest reverse body bias for high-Vth transistors does not necessarily result in optimal conditions. A BBVS of 0.0 V and -0.8 V, which requires 1.65 times the original area, utilizes as little as 1/30 of the static power of a conventional FPGA without performance degradation. Use of an aggressive forward body bias voltage such as +0.6 V for lowest-Vth, performance is increased by up to 10%. Another BBVS of +0.6 V, 0.0 V, and -0.8 V reduces static power to 14.06% while maintaining a 10% performance increase, but it requires 2.75-fold area.

We measured the longitudinal electric field of the electrical pulses with a rise time less than 1 ps on a coplanar transmission line by electrooptic sampling. The longitudinal component is a sharp pulse and is only observed at the wavefront. The transverse component has no overshoot or undershoot. The mixing of longitudinal component to the transverse component is discussed for C3v crystals whose electrooptic coefficient is large. We developed the method to estimate the longitudinal and the transverse component of the electric field by the polarization control of a probe light without changing the probe configuration which affects sensitivity severely. The waveform and the rise time of the transverse electric field were eatimated, for the first time, by subtracting the influence of the longitudinal component.

This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.