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Jonathan TURNER Achille PATTAVINA Tokuhiro KITAMI Iwao SASASE Kenji NAKAGAWA Toshikane ODA Akira HAKATA Takahiko KOZAKI Koji SUZUKI Naoaki YAMANAKA
Masao MIZUKAMI Yoichi SATOH Takahiko KOZAKI Yasuo MIKAMI
This paper describes CMOS embedded RAMs we developed utilizing 1.3 µm and 0.8 µm process technologies. Our goal was to achieve high-performance switching for digital communication systems. Because such switching can best be obtained by using high-performance embedded RAMs, we used 0.8 µm process technology and developed a 4 kW9 b single-port embedded RAM with 5 ns access time and 100 mW power dissipation during32 MHz operation, and a 1 kW9 b dual-port embedded RAM with 3.7 ns access time and 100 mW power dissipation during 40 MHz operation. We implemented these RAMs on one chip in developing three time-switch VLSIs, one buffer memory VLSI for ATM switches, and two cross-connect switch VLSIs.
Ken'ichi SAKAMOTO Morihito MIYAGI Masahiro TAKATORI Takahiko KOZAKI Akihiko TAKASE
This paper proposes implementation methods of fast ATM layer protection switching function. The main problem in attaining fast ATM protection is the number of connections in one transmission path. The transmission delay of the signal for protection negotiation procedure is relatively less than the processing time in the end nodes. Therefore shortening of the processing time in the nodes is a crucial factor for fast rerouting. This paper focuses on this point and presents some suitable implementations on ATM nodes for fast protection switching. These architectures can attain protection time of less than 50 ms after the detection of a failure at an end node. The key is load-sharing of the hardware and firmware. This paper also sums up the effectiveness of ATM protection and the current situation of standardization in ITU-T SG13.
Takahiko KOZAKI Kiyoshi AIKI Makoto MORI Masao MIZUKAMI Ken'ichi ASANO
This paper describes a 0.8-µm CMOS LSI developed for a 156-Mb/s serial interface in ATM switching systems. Recently, there have been increasing problems of connector pin neck and higher power consumption when enhancing switching system capacity. To overcome these problems, we have developed an LSI with a high-speed interface by using CMOS technology to achieve low power consumption. A low-swing differential signal level is used to achieve 156-Mb/s data transmission. We named this new circuit technique ALTS (Advanced Low-level Transmission circuit System). Using the LSI, transmission can be achieved between boards or racks through a 10-meter twisted pair cable. The LSI has a 156-Mb/s transmitter-receiver, a serial-to-parallel converter and a parallel-to-serial converter. It performs 19.5-Mb/s parallel data/156-Mb/s serial data conversion and 156-Mb/s serial data transmission. In addition, it has a bit phase synchronizer and cell synchronizer, which enables it to transmit and synchronize serial data without a paralleled clock or a paralleled cell top signal, by distributing a common 156-MHz clock and a common cell top signal to the whole system. We evaluated the bit error rate and timing margin on data transmission under several conditions. The results show that we can apply this LSI to commercially available ATM switching systems. This paper also describes methods of expanding switch capacity and transmitting 624-Mb/s data using this LSI.