By applying the ellipsometric analysis, the relationships between the growth of contaminant film on contact surface and contamination time were clarified with respect to the contact resistance and formation of the film. Contamination parameters for reaction formulas which are concerned with growth laws of contamination films for sulfuration of Ag and for oxidation of Cu were deduced.

The alloy of Ag (40wt%)-Pd(60wt%) has been used in the electrical contacts of electromechanical devices due to its superior contact properties. There is currently, an increasing trend to decrease the size of electromechanical devices. However, it has been difficult to obtain a high contact force and the high restoring force of contacts, and these problems cause contact failures such as high contact resistance. In response to this problem, the alloy is overlaid with an Au layer which is not affected by oxide films. However, when the contacts are subjected to an unacceptable amount of mechanical shock, adhesion of the Au overlay occurs easily. In order to solve these difficulties, it can be proposed to cover the contact surface with high electric conductive oxide films. With this concept, the Au overlay should be unnecessary. In the present study, to reduce the high contact resistance of the Ag-Pd alloy contaminated with an oxide film, very small amounts of Mg and Cr were used in separate doping trials to the alloy. The improvement of contact resistance characteristics is the focus of the present study. Specimens of Ag (40wt%)-Pd(60wt%), Ag-Pd-Mg(0.1, 0.5 and 1.0wt%), and Ag-Pd-Cr(0.1 and 0.5wt%) were oxidized at elevated temperatures to accelerate the process of oxidation, and the growth kinetic law of oxide films grown on the surfaces were evaluated by ellipsometry. The effect of the oxide film on the contact resistance characteristics were then clarified. A marked improvement of the contact resistance caused by the oxide film was found for the Ag-Pd alloy with a Mg doping agent. However, for the Cr doping agent, a low contact resistance was not obtained as same as the Ag-Pd alloy itself.

On account of its superior electrical contact performance, Ag (40wt%)-Pd(60wt%) alloy has been widely used to the electrical contacts of electromechanical devices. However, regarding small devices, some important difficulties arise due to the small size such as the degradation of the contact resistance caused by the oxide film grown on the surface. To solve these problems, it was reported previously that doping Mg and Cr into the Ag-Pd alloy was tried to improve the oxide film. As a result, the oxide film grown on the Ag-Pd-Mg surface exhibited a remarkably low contact resistance. However, for the oxide film on Ag-Pd-Cr, no improvement of the contact resistance was observed. In this study, to clarify the cause of the low contact resistance for Ag-Pd-Mg, the effect of the doping with a third element on the composition and formation of the oxide film was analyzed using electron diffractometry, XPS and STM. As a result, Ag was found to be distributed on the outermost surface and inside the oxide film formed on Ag-Pd-Mg. However, Ag was not found on the surface of and inside the oxide film formed on Ag-Pd-Cr. Therefore, it was concluded that the presence of Ag on the surface of and inside the oxide film reduces the resistivity of the film.

Constriction resistance is calculated by numerical analysis using Laplace's equations for electric potential of steady state in many cases of contact spot dispersion-status. The results show that contact resistance does not increase beyond 1.5 times even if the total real contact area is about 15% of the apparent contact area. When real contact area is at least about 60% of the apparent contact area, the contact resistance is approximately the same as the constriction resistance acquired from the apparent contact area. When the real contact area is about 50% of the apparent contact area, the contact resistance is approximately constant without regard to the contact shape and contact-point dispersion layout. Therefore, it is proved that contact resistance can be practically calculated using apparent contact area instead of real contact area when there are many contact points caused by metal to metal contact.

Progress of corrosion of contact surfaces on the printed circuit board both for thin Au plated (0.1µm) and for thick solder plated (10µm) were examined in H2S environment. The corrosion was evaluated by thickness of contaminant film and contact resistance. The Au plated surface easily degraded by pore corrosion. On the other hand, the film on the solder plated surface grew very slowly. For the solder plated surface, acceptable low contact resistance which corresponds to the low growth rate of the film was found.

Contact lubricants have been used in electric contacts such as connectors. Contact failures for down size of connector contacts with low contact force and cost down of gold plated are a serious problem to be solved. One solution is the application of lubricants to the contacts. Particularly these contacts are exposed to elevated temperature under reflow treatment in assembling processes. It is an important subject should be clarified that the deterioration phenomenon of increases in contact resistance properties under the reflow. This degradation should be induced by two causes. Namely, one is a surface contamination due to oxidation of diffused small amount of additives through gold plated layer. The other is decomposition of the coated lubricants. In this study, first of all, degradation of contact resistance properties were measured, and change of images of STM for exposure time of high temperature were observed. To clarify more in detail this degradation of the contact resistance, for both clean gold plated surface and heated clean surface were examined by using XPS and AES analysis. As results, contact resistance properties of clean surface were found to degrade for exposure at the elevated temperature. This degradation was found due to oxidation of base metal nickel and cobalt additive to gold plated surface. However, influence of the contact lubrication on the degradation of contact resistance was not recognized. The change of composition of an olefin lubricant was discussed by using STM images. Moreover, growth of oxide film on the clean surface was found as cubic law by using an ellipsometry.

At the present time, as downsizing of connectors causes thin gold plated layer and low contact load, serious problem of degradation of contact resistance property is induced. For these contacts, corrosion of the contacts surface under environment and high temperature as soldering and reflow process should be existed. Oxidation of base metal atoms which are diffused from under layer and additives occurs. Contact resistance increases for both surface contamination and low contact load. In order to resolve these problems and wear of surface, application of contact lubricants is useful and effective. However, degradation of the lubricants under such reflow process as high temperature possibly occurs. Therefore, in this study, from view point of change of lubricant quality as viscosity, weight loss, polymerization, oxidation and molecular orientation were clarified. For increase in contact resistance, orientation of lubricant molecular acts as important factor was found. The other factors of the lubricant hardly does not effect on contact resistance.

The effect of the silicone vapor on the reliability of the micro-motor was examined. Adsorbed silicone was decomposed to SiO2 by heating due to the discharge between brush and commutator surface. It was found that the operation time until the failure was extremely shortened by the formation of SiO2. The existence of the maximum operation time until the failure was found as depending on the number of revolution. For the higher revolution, many amounts of SiO2 accumulated by the decomposition of the silicone shorten the operation time. For lower revolution, as the torque of the motor reduces, the operation time also shortens. Therefore, the maximum operation time exists for optimum revolution.

The size of the true contact area of electrical contacts at very low temperature was evaluated by the breakdown of the superconduction caused by the self magnetic field of the current. Qutline of the breakdown of the superconduction in the true contact area were qualitatively clarified by the appearance of the constriction resistance.

Peculiar patterns of SiO2 contamination around the periphery of the contact trace caused by silicone vapor under switching at the boundary of 1.6 W were confirmed. For micro relays, the electrical power conditions are restricted to lower level. Therefore, it is important to ascertain the upper limit of the electrical power conditions for normal operation. The peculiar pattern is important as it is recognized as the first stage of the origination of contact failure. Causes of this pattern were discussed from the viewpoints of temperature distribution in the contact trace, molten metallic bridge, micro arc discharge, and supply of silicone vapor with oxygen. It is proposed that during the closing contacts, as maximum Joule heating occurs at the periphery of the true contact area and silicone vapor with oxygen is easily supplied at the periphery, SiO2 grows around the contact trace. For the opening contacts, as the bridge or micro arc appears, silicone vapor with oxygen is supplied only outside of the contacts. Thus SiO2 is formed mainly around the periphery of the trace. Moreover, SiO2 was scattered radially depending on the sputtering of molten metal under rupture of the bridge. Therefore, the peculiar pattern forms as a result.

Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.

Tin and its alloys have been applied for the plating of electrical contacts for low electrical power conditions. In particular, tin-plated contacts are widely used as connector contacts in automotive applications and as make-break contacts in keyboard switches. In the relationship between contact resistance (R) and contact load (W) for both solid and plated tin, singularities have been found. Previously established and well known theories on the deformation of contact interfaces cannot explain these singularities. In this study, to clarify these singularities, and to obtain a contact model explaining this phenomenon, contact traces for contact load were examined by SEM and STM. The obtained microscopic images indicated piling-up at the periphery of the contact area for both solid and plated tin. In this case the contact configuration comprised a platinum probe with a hemispherical tip surface and a flat tin surface for both solid and plated. When the probe was loaded, this tip of the probe sank into the soft tin surface owing to its lower hardness. In case of solid tin, the sinking of the probe surface into the tin surface causes piling-up around the periphery of the contact trace. In this deformation process, since the periphery of the indentation of the indented contact area severely slid against the surface of the platinum probe while applying a contact load, the contact resistance rapidly decreased with load. In this case, the center portion of the true contact area was not affected mechanically; thus, the surface film on the bottom portion of the deformed of the flat surface did not break down mechanically. On the other hand, in the case of a tin plated surface, similar piling up occurred; however, it was accompanied by scattering and separation of tin crystal grains from the surface. As a result of this process, a decrease in contact resistance similar to that for the solid tin occurred. Since the piling-up of the contact surface is a very important process in the application of connectors, the above-mentioned unusual characteristics were clarified in this study.

Characteristics of conductive elastomer that is composed of silicone rubber and dispersed carbon black particles show conductive and elastic properties in one simple material. This material has been widely applied to make-break contacts of panel switches and connectors of liquid crystal panels. However, since surface state of the contact is very soft, it is difficult to remove contaminant films of contaminated opposite side contact surface and to obtain low contact resistance owing to break the film. This is an important problem to be solved not only for the application of make-break switching contact but also static connector contacts. This study has been conducted to examine some complex structures of the elastomer which indicate removal characteristics for contaminant films and low contact resistance. As specimens, six different types of elastomer contacts composed of different type of dispersed materials as carbon and metal fibers, metal mesh, and plated surfaces were used. The contacts of opposite side were Au and Sn plated contact surface on a printed circuit board (PCB) which is usually used in the static connector and make-break contacts. In order to contaminate contact surfaces of PCB, the surfaces were subjected to exposure in an SO2 gas environment. The elastomeric contacts contained hard materials showed lower contact resistance than only dispersed carbon particles in the elastomer matrix for both contaminated PCB contact surfaces.

Tin (Sn) contacts are widely applied to connector contacts. Surfaces of plated tin layer are covered with an oxide film that results in high contact resistance. However, it is possible to obtain low contact resistance by using high contact load. Current downsizing trends often make it difficult to obtain high contact loads. Therefore, it is important to conduct basic studies of the contacts resistance characteristics under low contact load conditions. In this study, relationships between contact resistance and the changes of contact traces were examined. When a platinum (Pt) hemisphere contacted to tin plated flat coupon, it was found that the hemisphere surface sank into the softer tin plated flat surface during loading resulting in a piling up tin crystal grains along the periphery of the contact trace. During this process, sudden decrease in contact resistance was observed. To clarify the phenomenon, morphology changes of contact traces were observed by AFM, SEM and EBSD. FEM analysis was also used to analyze the mechanical stress distribution in the tin plated layer. Due to the peculiar distribution of stress, the crystal grains are separated and push out the contact area. This phenomenon is very different from commonly observed decrease in contact resistance due to elastic and plastic deformation inducing mechanical fracture of the surface oxide film.

Contact surfaces are exposed to the atmosphere in general applications. Therefore, gases in the atmosphere such as oxygen and H2O are adsorbed on and react with the contact surface. Products formed on the surface such as copper oxide films degrade contact resistance characteristics. This surface contamination is an important problem for electrical contact applications. The author has studied the effect of humidification on contact resistance characteristics. In this paper, the effect of humidity on the growth of an oxide film on a copper surface was clarified. An increase in the humidity results in a decrease in the thickness, in contrast, a decrease in the humidity increases the thickness linearly. Changes in the oxide film thickness based on the level of humidity were measured by ellipsometry. Surface state changes influenced by humidification were analyzed topographically using a scanning tunneling microscope. The mechanism of the effect of humidity on the film thickness was discussed on the basis of the deduction of the copper oxide film by H2 from the adsorbed H2O. Moreover, the changes in contact resistance levels for both static and sliding contacts due to humidity were measured, and a dependence on humidity was found.

The effect of silicone vapour concentration on the contact failure was examined by using micro relays and motor brush-slip ring(commutator) contacts, [(CH3) 2SiO]4: D4 was used as a vapour source of silicone contamination. Because the influence of the vapour of the silicone on the contact surface can not be avoided at all times due to its gradual evaporation in the atmosphere. The contact failure caused by the silicone vapour was confirmed as formation of SiO2 on the contact surfaceby analysis of EPMA and XPS. A minimum limiting concentration level which does not affect contact reliability was found. This limiting level was 10 ppm(O.13mg/l). Validity of the limiting level was confirmed by the relationships among concentration, temperature, SiO2 film thickness and contact resistance. Furthermore, the effect of the degree of silicone polymerization on the limiting concentration was derived by an empirical formula. This silicone is found to have polymerization degree larger than D7: n=7. These results were confirmed by the contact failure data due to the silicone contamination.

Scanning tunneling microscopy (STM) images indicate a change in tunnel current. The tunnel current strongly depends on the applied voltage between the specimen surface and a probe tip, and also on the work function of the specimen surface. Therefore, STM images are different from optical images. Under a certain applied voltage, the distribution of the work function on the surface is directly related to the image. In the present study, in order to understand the STM images obtained from the contact surface, example surfaces of Ag-Pd alloys with Mg and Cr additives were investigated by STM. The additives are easily oxidized, and their oxides distribute over the surface. Therefore, the effect of the additives on the STM images could be observed. For Ag-Pd-Cr, in the case of both clean and oxidized surfaces, the Cr oxides CrO and Cr2O3 formed on the surface are typical insulators, and sharp projections, such as needles, can be seen in the images which are very different from optical microscopy image. In addition, a high contact resistance was measured. On the other hand, for Ag-Pd-Mg, MgO formed on the surface was conductive, and a smooth surface was obtained, as evidenced by the STM image. Contact resistance was very low. Even if the oxides grew under heating, the same tendencies were observed. The conductivity of oxides on the surface had a great effect on the images obtained. A correlation between the contact resistance and the STM images was found.

Electrical contacts are an important part of electrical circuits and many reliability problems are related to electrical contact failure. It is important to investigate the relationship between load and contact resistance which is an important factor of contact reliability. In this study, the effect of plated material and plated thickness on contact resistance was examined. The samples were constructed of a copper alloy with tin or silver plating. Contact configuration was hemispherical-flat contact. The contact resistance was measured by using a four-probe method with a load up to 40 N. The relation between indentation contact area (i.e. apparent contact area) and contact resistance was determined. As experimental results, the contact resistance depends on the indentation of the contact area. In the same contact area, tin-plated samples have higher resistance than those that are silver-plated due to their own resistivity. The constriction resistance of a plated layer, which depends on contact area, plated material and plated thickness, is analyzed by a theoretical solution, which is shown by R=Φρ /2a, using a surface resistance coefficient Φ . The theoretical results show almost good agreement with the experimental results. Thus, the indentation contact area (i.e. apparent contact area) is almost the same as the real contact area in this study.

The electrical lubricants have been accepted to reduce friction of contacts and to prevent degradation of contact resistance. However, as the lubricant has an electrical insulation property it seems that application to contact surface is unsuitable for contact resistance. These mechanisms in contact interfaces have not fully understood. In this paper, relationships between contact resistance and contact load were examined with both clean and lubricated surfaces. Orientation of the lubricant molecules was observed by high magnification images of STM and AFM. There was no difference in contact resistance characteristics for both clean and lubricated surfaces in spite of lubricants thickness. The molecules were orientated perpendicular to the surface. This fact turns over an established theory of adsorption of non-polar lubricant to surface.

Effect of the shape of contact surface on the contact resistance property of contaminated surface was examined in conjunction with the radius of curvature of the hemisphere contact surface. As the results, the dependence of the radius of curvature on the contact resistance was found. And the existence of the radius which gives maximum contact resistance was also found.