A novel charge-recovery logic structure called Pulse Boost Logic (PBL) is proposed in this paper. PBL is a high-speed low-energy-dissipation charge-recovery logic with dual-rail evaluation tree structure. It is driven by 2-phase non-overlap clock, and requires no DC power supply. PBL belongs to boost logic family, which includes boost logic, enhanced boost logic and subthreshold boost logic. In this paper, PBL has been compared with other charge-recovery logic technologies. To demonstrate the performance of PBL structure, a 4-bit pipeline multiplier is designed and fabricated with 0.18 µm CMOS process technology. The simulation results indicate that the 4-bit multiplier can work at a frequency of 1.8 GHz, while the measurement of test chip is at operation frequency of 161 MHz, and the power dissipation at 161 MHz is 772 µW.

In this paper, the charge pump efficiency is discussed, and a dual charge pump circuit with complementary architecture using charge sharing clock scheme is presented. The proposed charge sharing clock generator is able to recover the charge from parasitic-capacitor charging and discharging, so that the dynamic power loss in the pumping process is reduced by a half. To preserve the overlapping period of the four-phase clock used for threshold cancellation technique, two complementary sets of clocks are generated from the proposed clock generator, and each set feeds a certain branch of the dual charge pump to achieve the between-branch charge sharing. A test chip is fabricated in 0.18 µm process, and the area penalty of the proposed charge sharing clock generator is 1%. From the measurement results, the proposed charge pump shows an overall power efficiency increase with a peak value of 63.7% comparing to 52.3% of a conventional single charge pump without charge sharing, and the proposed clock scheme shows no degradation on the driving capability while the output ripple voltage is reduced by 43%.

This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm2.