Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator

Hao ZHANG; Mengshu HUANG; Yimeng ZHANG; Tsutomu YOSHIHARA

doi:10.1587/transele.E96.C.859

IEICE TRANSACTIONS on Electronics

Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator

Hao ZHANG, Mengshu HUANG, Yimeng ZHANG, Tsutomu YOSHIHARA

Full Text Views

0

Cite this

Summary :

This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².

Publication: IEICE TRANSACTIONS on Electronics Vol.E96-C No.6 pp.859-866

Publication Date: 2013/06/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E96.C.859

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)

Category

Authors

Hao ZHANG
  Waseda University
Mengshu HUANG
  Waseda University
Yimeng ZHANG
  Waseda University
Tsutomu YOSHIHARA
  Waseda University

Keyword

voltage reference, subthreshold, self-cascode, body effect, ultra-low power, low output

Cite this

Copy

Hao ZHANG, Mengshu HUANG, Yimeng ZHANG, Tsutomu YOSHIHARA, "Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator" in IEICE TRANSACTIONS on Electronics, vol. E96-C, no. 6, pp. 859-866, June 2013, doi: 10.1587/transele.E96.C.859.
Abstract: This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.859/_p

Copy

@ARTICLE{e96-c_6_859,
author={Hao ZHANG, Mengshu HUANG, Yimeng ZHANG, Tsutomu YOSHIHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator},
year={2013},
volume={E96-C},
number={6},
pages={859-866},
abstract={This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².},
keywords={},
doi={10.1587/transele.E96.C.859},
ISSN={1745-1353},
month={June},}

Copy

TY - JOUR
TI - Self-Cascode MOSFET with a Self-Biased Body Effect for Ultra-Low-Power Voltage Reference Generator
T2 - IEICE TRANSACTIONS on Electronics
SP - 859
EP - 866
AU - Hao ZHANG
AU - Mengshu HUANG
AU - Yimeng ZHANG
AU - Tsutomu YOSHIHARA
PY - 2013
DO - 10.1587/transele.E96.C.859
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2013
AB - This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm².
ER -

IEICE TRANSACTIONS on Electronics