This paper presents a high jitter performance injection-locked clock multiplier (ILCM) using an ultra-low power (ULP) voltage-controlled oscillator (VCO) for IoT application in 65-nm CMOS. The proposed transformer-based VCO achieves low flicker noise corner and sub-100µW power consumption. Double cross-coupled NMOS transistors sharing the same current provide high transconductance. The network using high-Q factor transformer (TF) provides a large tank impedance to minimize the current requirement. Thanks to the low current bias with a small conduction angle in the ULP VCO design, the proposed TF-based VCO's flicker noise can be suppressed, and a good PN can be achieved in flicker region (1/f3) with sub-100µW power consumption. Thus, a high figure-of-merit (FoM) can be obtained at both 100kHz and 1MHz without additional inductor. The proposed VCO achieves phase noise of -94.5/-115.3dBc/Hz at 100kHz/1MHz frequency offset with a 97µW power consumption, which corresponds to a -193/-194dBc/Hz VCO FoM at 2.62GHz oscillation frequency. The measurement results show that the 1/f3 corner is below 60kHz over the tuning range from 2.57GHz to 3.40GHz. Thanks to the proposed low power VCO, the total ILCM achieves 78 fs RMS jitter while using a high reference clock. A 960 fs RMS jitter can be achieved with a 40MHz common reference and 107µW corresponding power.

In this paper, we proposed low power consumption ASK transmitter based on the direct modulated oscillator at 60GHz-band. To achieve the proposed transmitter, high power-efficient oscillator and loss less modulator are designed. Moreover combined on-chip resonator and antenna to remove the buffer amplifier of the transmitter to reduce the power consumption and size. The proposed transmitter has been fabricated in standard 65nm CMOS process. The core area is 1130µm×590µm with pads. The operation frequency is 60.4GHz. The BER of 10^-6 is achieved under 50Mbps with power consumption of less than 260µW including the buffer amplifier. Using the proposed combined on-chip resonator and antenna, which need no buffer amplifier for transmitter and the power consumption is reduced to 180µW.

This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.

This paper presents a design optimization method for a Gm-C active filter via geometric programming (GP). We first describe a GP-compatible model of a cascaded Gm-C filter that forms a biquadratic output transfer function. The bias, gain, bandwidth, and signal-to-noise ratio (SNR) of the Gm-C filter are described in a GP-compatible way. To further enhance the accuracy of the model, two modeling techniques are introduced. The first, a two-step selection method, chooses whether a saturation or subthreshold model should be used for each transistor in the filter to enhance the modeling accuracy. The second, a bisection method, is applied to include non-posynomial inequalities in the filter modeling. The presented filter model is optimized via a GP solver along with proposed modeling techniques. The numerical experiments over wide ranges of design specifications show good agreement between model and simulation results, with the average error for gain, bandwidth, and SNR being less than 9.9%, 4.4%, and 14.6%, respectively.

This paper proposes a novel approach for implementing an ultra-low-power voltage reference using the structure of self-cascode MOSFET, operating in the subthreshold region with a self-biased body effect. The difference between the two gate-source voltages in the structure enables the voltage reference circuit to produce a low output voltage below the threshold voltage. The circuit is designed with only MOSFETs and fabricated in standard 0.18-µm CMOS technology. Measurements show that the reference voltage is about 107.5 mV, and the temperature coefficient is about 40 ppm/, at a range from -20 to 80. The voltage line sensitivity is 0.017%/V. The minimum supply voltage is 0.85 V, and the supply current is approximately 24 nA at 80. The occupied chip area is around 0.028 mm2.