In this paper, we propose a novel content-aware image resizing method based on grid transformation. Our method focuses on not only keeping important regions unchanged but also keeping the aspect ratio of the main object in an image unchanged. The dual conditions can avoid distortion which often occurs when only using the former condition. Our method first calculates image importance. Next, we extract the main objects on an image by using image importance. Finally, we calculate the optimal grid transformation which suppresses changes in size of important regions and in the aspect ratios of the main objects. Our method uses lower and upper thresholds for transformation to suppress distortion due to extreme shrinking and enlargement. To achieve better resizing results, we introduce a boundary discarding process. This process can assign wider regions to important regions, reducing distortions on important regions. Experimental results demonstrate that our proposed method resizes images with less distortion than other resizing methods.

This paper presents the selective epitaxial growth (SEG) properties of reduced pressure chemical vapor deposition (RPCVD) at low temperatures (LT) of 675-725 with high aspect ratio mask of dielectric films. The SEG process could be explained in conjunction with the loading effect, the mask pattern shape/size, and the process parameters of RPCVD. The growth rates showed a large non-uniformity up to 40% depending upon the pattern size of the dielectric mask films, but as the SEG film becomes thicker, the growth rate difference converged on 15% between the narrow 2-µm and the wide 100-µm patterns. The evolution of SEG was controlled dominantly by the surface migration control at the initial stage, and converted to the surface topology control. The design of pattern size and distribution with dummy patterns must be useful to accomplish the reliable and uniform LT-SEG.

The performance of integrated segmentation and recognition of handwritten numeral strings relies on the classification accuracy and the non-character resistance of the underlying character classifier, which is variable depending on the techniques of pattern normalization, feature extraction, and classifier structure. In this paper, we evaluate the effects of 12 normalization functions and four selected feature types on numeral string recognition. Slant correction (deslant) is combined with the normalization functions and features so as to create 96 feature vectors, which are classified using two classifier structures. In experiments on numeral string images of the NIST Special Database 19, the classifiers have yielded very high string recognition accuracies. We show the superiority of moment normalization with adaptive aspect ratio mapping and the gradient direction feature, and observed that slant correction is beneficial to string recognition when combined with good normalization methods.

This paper proposes the use of the ratio of wavelet extrema numbers taken from the horizontal and vertical counts respectively as a texture feature, which is called aspect ratio of extrema number (AREN). We formulate the classification problem upon natural and synthesized texture images as an optimization problem and develop a coevolving approach to select both scalar wavelet and multiwavelet feature spaces of greater discriminatory power. Sequential searches and genetic algorithms (GAs) are comparatively investigated. The experiments using wavelet packet decompositions with the innovative packet-tree selection scheme ascertain that the classification accuracy of coevolutionary genetic algorithms (CGAs) is acceptable enough.

A post-wall waveguide-fed parallel plate slotted array is an attractive candidate for high efficiency and mass producible planar array antennas for millimeter wave applications. For the slot design of this large sized array, a periodic boundary wall model based on the assumption of infinite array size and a parallel waveguide is used. In fact, the aperture is large but still finite (10-40 wavelength) and the TEM-like wave is perturbed due to the narrow walls at the periphery of the aperture as well as the slot coupling; antenna efficiency is affected by the size and the aspect ratio of the aperture. All these observations imply the unique defects of oversized waveguide arrays. In this paper, the aperture efficiency of post-wall waveguide arrays is assessed as a function of size and aspect ratio of the aperture for the first time, both in theory and measurement. An effective field analysis for an electrically large oversized waveguide array, developed by the author, is utilized for determining the slot excitation coefficients and aperture illumination. It is predicted that the oversized waveguide array has a potential efficiency of 80-90% if the aperture is larger than 18 wavelength on a side and the gain is more than 30 dBi. A transversely wide aperture generally provides higher efficiency than a longitudinally long aperture, provided a perfectly uniform TEM wave would be launched from the feed waveguide.

In this paper we consider the VLSI layout (i.e., Manhattan layout) of graphs into grids with minimum width (i.e., the length of the shorter side of a grid) as well as with minimum area. The layouts into minimum area and minimum width are equivalent to those with the largest possible aspect ratio of a minimum area layout. Thus such a layout has a merit that, by "folding" the layout, a layout of all possible aspect ratio can be obtained with increase of area within a small constant factor. We show that an N-vertex tree with layout-width k (i.e., the minimum width of a grid into which the tree can be laid out is k) can be laid out into a grid of area O(N) and width O(k). For binary tree layouts, we give a detailed trade-off between area and width: an N-vertex binary tree with layout-width k can be laid out into area and width k + α, where α is an arbitrary integer with 0 α , and the area is existentially optimal for any k 1 and α 0. This implies that α = Ω(k) is essential for a layout of a graph into optimal area. The layouts proposed here can be constructed in polynomial time. We also show that the problem of laying out a given graph G into given area and width, or equivalently, into given length and width is NP-hard even if G is restricted to a binary tree.

A new algorithm for texture segmentation, called iterative feature extraction (IFE), is proposed to iteratively search and select for an overcomplete wavelet feature vector based on aspect ratio of extrema number (AREN) with a desired window that provides optimal classification accuracy.

Directional dry etching of Tantalum is described X-ray lithography absorber patterns. Experiments are carried out using both reactive ion etching in CBrF3-based plasma and electron-cyclotron-resonance ion-stream etching in Cl2-based plasma. Ta absorber patterns with perpendicular sidewalls cannot be obtained by RIE when only CBrF3 gas is used as the etchant. While adding CH4 to CBrF3 effectively improves the undercutting of Ta patterns, it deteriorates etching stability because of the intensive deposition effect of CH4 fractions. By adding an Ar/CH4 mixture gas to CBrF3, it is possible to use RIE to fabricate 0.2-µm Ta absorber patterns with perpendicular sidewalls. ECR ion-stream etching is investigated to obtain high etching selectivity between Ta and SiO2 (etching mask)/SiN (membrane). Adding O2 to the Cl2 etchant improves undercutting without remarkably decreasing etching selectivity. Furthermore, an ECR ion-stream etching method is developed to stably etch Ta absorber patterns finer than 0.2µm. This is successfully applied to X-ray lithography mask fabrication for LSI test devices.