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[Keyword] charge redistribution(5hit)

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  • A 9-bit 100 MS/s SAR ADC with Digitally Assisted Background Calibration

    Xiaolei ZHU  Yanfei CHEN  Sanroku TSUKAMOTO  Tadahiro KURODA  

     
    PAPER

      Vol:
    E95-C No:6
      Page(s):
    1026-1034

    The performance of successive approximation register (SAR) analog-to-digital converter (ADC) is well balanced between power and speed compare to the conventional flash or pipeline architecture. The nonlinearities suffer from the CDAC mismatch and comparator offset degrades SAR ADC performance in terms of DNL and INL. An on chip histogram-based digitally assisted background calibration technique is proposed to cancel and relax the aforesaid nonlinearities. The calibration is performed using the input signal, watching the digital codes in the specified vicinity of the decision boundaries, and feeding back to control the compensation capacitor periodically. The calibration does not require special calibration signal or additional analog hardware which is simple and amenable to hardware or software implementations. A 9-bit SAR ADC with split CDAC has been implemented in a 65 nm CMOS technology and it achieves a peak SNDR of 50.81 dB and consumes 1.34 mW from a 1.2-V supply. +0.4/-0.4 LSB DNL and +0.5/-0.7 LSB INL are achieved after calibration. The ADC has input capacitance of 180 fF and occupies an area of 0.10.13 mm2.

  • CMOS Differential Circuits Using Charge-Redistribution and Reduced-Swing Schemes

    Hong-Yi HUANG  Shiun-Dian JAN  Yang CHOU  Cheng-Yu CHEN  

     
    PAPER-Electronic Circuits

      Vol:
    E95-C No:2
      Page(s):
    275-283

    The charge-redistribution low-swing differential logic (CLDL) circuits are presented in this work. It can implement a complex function in a single gate. The CLDL circuits utilizes the charge-redistribution and reduced-swing schemes to reduce the power dissipation and enhance the operation speed. In addition, a pipeline structure is formed by a series connection structure controlled by a true-single-phase clock, thereby achieving high-speed operation. The CLDL circuits perform more than 25% speedup and 31% in power-delay product compared to other differential circuits with true-single-phase clock. A pipelined multiplier-accumulator (MAC) using CLDL structure is fabricated in 0.35 µm single-poly four-metal CMOS process. The test chip is successfully verified to operate at 900-MHz.

  • A 9-bit 100-MS/s 1.46-mW Tri-Level SAR ADC in 65 nm CMOS

    Yanfei CHEN  Sanroku TSUKAMOTO  Tadahiro KURODA  

     
    PAPER-Circuit Design

      Vol:
    E93-A No:12
      Page(s):
    2600-2608

    A 9-bit 100-MS/s successive approximation register (SAR) ADC with low power and small area has been implemented in 65-nm CMOS technology. A tri-level charge redistribution technique is proposed to reduce DAC switching energy and settling time. By connecting bottom plates of differential capacitor arrays for charge sharing, extra reference voltage is avoided. Two reference voltages charging and discharging the capacitors are chosen to be supply voltage and ground in order to save energy and achieve a rail-to-rail input range. Split capacitor arrays with mismatch calibration are implemented for small area and small input capacitance without linearity degradation. The ADC achieves a peak SNDR of 53.1 dB and consumes 1.46 mW from a 1.2-V supply, resulting in a figure of merit (FOM) of 39 fJ/conversion-step. The total active area is 0.012 mm2 and the input capacitance is 180 fF.

  • A Self-Calibration Technique for Capacitor Mismatch Errors of an Interleaved SAR ADC

    Yasuhide KURAMOCHI  Masayuki KAWABATA  Kouichiro UEKUSA  Akira MATSUZAWA  

     
    PAPER-Electronic Circuits

      Vol:
    E93-C No:11
      Page(s):
    1630-1637

    We present self-calibration techniques for an interleaved SAR (Successive Approximation Register) ADC. The calibration technique is based on hardware corrections for linearity of single stage, gain error and mismatch errors of parallel ADCs. The 4-interleaved 11-bit ADC has been fabricated in a 0.18-µm CMOS process. Using the calibrations, measurement and calculation results show that the differences of ramp characteristic among the 4-interleaving ADC can be decresased to under 0.63 LSB.

  • A 0.027-mm2 Self-Calibrating Successive Approximation ADC Core in 0.18-µm CMOS

    Yasuhide KURAMOCHI  Akira MATSUZAWA  Masayuki KAWABATA  

     
    PAPER

      Vol:
    E92-A No:2
      Page(s):
    360-366

    We present a 10-bit 1-MS/s successive approximation analog-to-digital converter core including a charge redistribution digital-to-analog converter and a comparator. A new linearity calibration technique enables use of a nearly minimum capacitor limited by kT/C noise. The ADC core without digital control blocks has been fabricated in a 0.18-µm CMOS process and consumes 118 µW at 1.8 V power supply. Also, the active area of ADC core is realized to be 0.027 mm2. The calibration improves the SNDR by 13.4 dB and the SFDR by 21.0 dB. The measured SNDR and SFDR at 1 kHz input are 55.2 dB and 73.2 dB respectively.