This paper presents a novel charge transfer CMOS readout circuit for an X-ray time delay and integration (TDI) array with a depth of 64. In this study, a charge transfer readout scheme based on CMOS technology is proposed to sum 64 stages of the TDI signal. In addition, a dead pixel elimination circuit is integrated within a chip, thus resolving the weakness of TDI arrays related to defective pixels. The proposed method is a novel CMOS solution for large depth TDI arrays. Thus, a high signal-to-noise ratio (SNR) can be acquired due to the increased TDI depth. The readout chip was fabricated with a 0.6 µm standard CMOS process for a 15064 CdTe X-ray detector array. The readout circuit was found to effectively increase the charge storage capacity up to 1.6108 electrons, providing an improved SNR by a factor of approximately 8. The measured equivalent noise charge resulting from the readout circuit was 1.68104 electrons, a negligible value compared to the shot noise from the detector.

STM/STS measurements have been carried out for TTF-TCNQ complex films evaporated on hydrogen-terminated silicon substrates, and the variation of tunneling spectra has been investigated on morphologically different crystal grains. Very thin semiconductive adsorbed layers were found to cover the as-deposited film surfaces. By removing the adsorbed layers, the intrinsic electronic structures of two different phases were revealed. A 'needle phase' which appears at the early stage of film growth has a semiconductive character and a 'granular phase' which grows later has a metallic character similar to bulk crystals. The electronic structure of the needle phase is considered to be affected by the substrate although the crystallographic structure is similar to the bulk crystal of TTF-TCNQ.

To investigate the effect of alkyl chain length and adsorption time on the charge-transfer complex formation, ultraviolet-visible absorption and inelastic electron tunneling (IET) spectroscopy measurements were carried out for the tetramethylphenylenediamine (TMPD; donor molecule) adsorbed dodecyl-, pentadecyl- and octadecyl-tetracyanoquinodimethane (TCNQ) Langmuir-Blodgett (LB) films. In the optical absorption spectra, the main peak of LB films shows a red-shift depending on alkyl chain length and adsorption time. Furthermore, the dependence on alkyl chain length and adsorption time are also shown in the IET spectra. These results demonstrate that adsorption LB methods enable to control the adsorption ratio of functional molecules and the CT complex formation.

Copper contamination behavior is studied, depending on the pH level, conductivity type P or N of a silicon substrate, and contamination method of copper. If the pH level of a copper containing solution is adjusted by using ammonia, copper atoms and ammonia molecules produce copper ion complexes. Accordingly, the amount of copper adsorption on the substrate surface is decreased. When N-type silicon substrates are contaminated by means of copper containing solutions, copper atoms on the surfaces diffuse into bulk crystal even at room temperature. But for P-type silicon substrates, copper atoms are transferred into bulk crystal only after high temperature annealing. In the case of silicon substrates contaminated by contact with metallic copper, no copper atom diffusion into bulk crystal was observed. The above mentioned copper contamination behavior can be explained by the charge transfer interaction of copper atoms with silicon substrates.