The search functionality is under construction.
The search functionality is under construction.

Keyword Search Result

[Keyword] inductors(6hit)

1-6hit
  • Improved Magnetic Equivalent Circuit with High Accuracy Flux Density Distribution of Core-Type Inductor

    Xiaodong WANG  Lyes DOUADJI  Xia ZHANG  Mingquan SHI  

     
    PAPER-Electronic Components

      Pubricized:
    2020/02/10
      Vol:
    E103-C No:8
      Page(s):
    362-371

    The accurate calculation of the inductance is the most basic problem of the inductor design. In this paper, the core flux density distribution and leakage flux in core window and winding of core-type inductor are analyzed by finite element analysis (FEA) firstly. Based on it, an improved magnetic equivalent circuit with high accuracy flux density distribution (iMEC) is proposed for a single-phase core-type inductor. Depend on the geometric structure, two leakage paths of the core window are modeled. Furthermore, the iMEC divides the magnetomotive force of the winding into the corresponding core branch. It makes the core flux density distribution consistent with the FEA distribution to improve the accuracy of the inductance. In the iMEC, flux density of the core leg has an error less than 5.6% compared to FEA simulation at 150A. The maximum relative error of the inductance is less than 8.5% and the average relative error is less than 6% compared to the physical prototype test data. At the same time, due to the high computational efficiency of iMEC, it is very suitable for the population-based optimization design.

  • Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors

    Michihiko SUHARA  Eri UEKI  Tsugunori OKUMURA  

     
    PAPER-Emerging Devices

      Vol:
    E91-C No:7
      Page(s):
    1070-1075

    Monolithic gyrators are proposed on the basis of integrating resonant tunneling diodes (RTDs) and HEMT toward realization of broadband and high-Q passives. Feasibility of millimeter-wave active inductors using the gyrator are described with equivalent circuit analysis and numerical calculations assuming InP based RTDs and a HEMT to be integrated.

  • 0.18-µm CMOS 10-Gb/s Current-Mode Serial Link Transmitters

    Fei YUAN  Jean JIANG  

     
    PAPER-Communications and Wireless Systems

      Vol:
    E88-D No:8
      Page(s):
    1863-1869

    This paper presents the design of new fully differential CMOS class A and class AB current-mode transmitters for multi-Gbps serial links. A high multiplexing speed is achieved by multiplexing at low-impedance nodes and inductive shunt peaking with active inductors. The fully complementary operation of the multiplexers and the fully differential configuration of the transmitters minimizes the effect of common-mode disturbances and that of EMI from channels to neighboring devices. Large output current swing is obtained by making use of differential current amplifiers and the differential rail-to-rail configuration. The constant current drawn from the supply voltage minimizes the noise injected into the substrate. The transmitters have been implemented in TSMC's 1.8 V 0.18 µm CMOS technology and analyzed using Spectre from Cadence Design Systems with BSIM3V device models. Simulation results confirm that the proposed transmitters are capable of transmitting data at 10 Gbps.

  • A New Inductance Extraction Technique of On-Wafer Spiral Inductor Based on Analytical Interconnect Formula

    Hideki SHIMA  Toshimasa MATSUOKA  Kenji TANIGUCHI  

     
    PAPER

      Vol:
    E88-C No:5
      Page(s):
    824-828

    A new inductance extraction technique of spiral inductor from measurement fixture is presented. We propose a scalable expression of parasitic inductance for interconnects, and design consideration of test structure accommodating spiral inductor. The simple expression includes mutual inductance between the interconnects with high accuracy. The formula matches a commercial field solver inductance values within 1.4%. The layout of the test structure to reduce magnetic coupling between the spiral and the interconnects allows us to extract the intrinsic inductance of spiral more accurately. The proposed technique requires neither special fixture used for measurement-based method nor skilled worker for precise extraction with the analytical technique used.

  • A Possible Simple Structure for Variable Microwave Inductors and Their Filter Applications

    Norio IMAI  Kazuhiko HONJO  Akira SAITOU  

     
    LETTER-Microwaves, Millimeter-Waves

      Vol:
    E87-C No:1
      Page(s):
    113-115

    A new concept of changing inductance values has been proposed, where a part of meander inductor is short circuited to reduce effective line length. Microwave characteristics of the short-circuited meander inductors and the meander inductor without the short circuit have been designed and fabricated on resin circuit boards. The reduction of inductance values by 40% has been successfully realized for the microwave frequency range from 0.5 GHz to 5 GHz for both designed and measured results. Using the proposed structure, low pass filters having two different cut-off frequencies have been designed and tested. Measured cut-off frequency changed 3.0 GHz to 4.2 GHz.

  • Cost-Effective RF Front-End Module Using High Q Passive Components on Liquid Crystal Polymer Substrates and Micro-BGA

    Stephane PINEL  Mekita F. DAVIS  Venky SUNDARAM  Kyutae LIM  Joy LASKAR  George WHITE  Rao R. TUMMALA  

     
    PAPER

      Vol:
    E86-C No:8
      Page(s):
    1584-1592

    Electronics packaging evolution involves both systems, technology & materials considerations. In this paper, we present a novel 3D integration approach for system-on-package (SOP) based solutions for wireless communication applications. This concept is proposed for the 3D integration of a C band Wireless LAN (WLAN) RF front-end module by means of stacking LCP (Liquid Crystal Polymer) substrates using µBGA technology. LCP substrates fabrication, high Q inductor design and the associated physical based modeling are detailed. Then stacking techniques using µBGA technology is presented. Characterization and modeling of RF vertical board-to-board transition, using µBGA process are detailed and show that this vertical transition is suitable for C-band wireless communication applications.