This paper presents a divide-by-9 injection-locked frequency divider (ILFD). It can lock onto about 6-GHz input with a locking range of 3.23GHz (58%). The basic concept of the ILFD is based on employing self-gated multiple inputs into the multiple-stage ring oscillator. A wide lock range is also realized by adapting harmonic-control circuits, which can boost specific harmonics generated by mixing. The ILFD was fabricated using a 55-nm deeply depleted channel (DDC) CMOS process. It occupies an area of 0.0210mm2, and consumes a power of 14.4mW.

This paper proposes an on-chip measurement method of PLL through fully digital interface. For the measurement of the PLL transfer function, we modulated the phase of the PLL input in triangular form using Digital-to-Time Converter (DTC) and read out the response by Time-to-Digital Converter (TDC). Combination of the DTC and TDC can obtain the transfer function of the PLL both in the magnitude domain and the phase domain. Since the DTC and TDC can be controlled and observed by digital signals, the measurement can be conducted without any high speed analog signal. Moreover, since the DTC and TDC can be designed symmetrically, the measurement method is robust against Process, Voltage, and Temperature (PVT) variations. At the same time, the employment of the TDC also enables a measurement of the PLL lock range by changing the division ratio of the divider. Two time domain circuits were designed using 180nm CMOS process and the HSPICE simulation results demonstrated the measurement of the transfer function and lock range.

This paper derives a maximum lock range of an injection locked ring oscillator in a direct injection method and presents an injection locked charge-pump phase-locked loop (CPPLL) with a replica of a ring oscillator. The proposed injection-locked PLL separates the injection-locked VCO from the continuous phase-tracking loop of the PLL such that can provide stable lock-state maintenance and tolerance to temperature and supply voltage variation. The measurement results show that the proposed injection-locked PLL can be tolerable to voltage variation of 11.2% in supply voltage of 1.2V. In-band noises of the injection-locked oscillator at offset frequencies of 10kHz and 100kHz are -108.2dBc/Hz and -114.6dBc/Hz, respectively.

This paper describes a wide-frequency-range phase-locked-loop (PLL) clock generator embedded in a gate array LSI using 0.25 µm CMOS/SIMOX technology. The four ratios of internal clock frequency to external clock frequency this generator supports are 2, 4, 8, and 16. The PLL has two kinds of voltage-controlled oscillators that are selected automatically according to the frequency so as to widen the operating frequency range while keeping jitter low. Measured results show that the PLL operates with a lock range from 5 to 500 MHz. At 500 MHz, the peak-to-peak jitter is 50 ps. The supply voltage is 2 V and power dissipation is less than 14 mW. At a supply voltage of 2 V, the maximum operating frequency of 0.25 µm CMOS/SIMOX PLL is 30% higher than that of 0.25 µm bulk CMOS PLL.

A 3.2 GHz, 50 mW, 1 V, GaAs clock pulse generator (CG) based on a phase-locked loop (PLL) circuit has been designed for use as an on-chip clock generator in future high speed processor LSIs. 0.5 µm GaAs MESFET and DCFL circuit technologies have been used for the CG, which consists of 224 MESFETs. An "enhanced charge-up current" inverter has been specially designed for a low power and high speed voltage controlled oscillator (VCO). In this new inverter, a voltage controlled dMESFET is combined in parallel with the load dMESFET of a conventional DCFL inverter. This voltage controlled dMESFET produces an additional charge-up current resulting in the new VCO obtaining a much higher oscillation frequency than that of a ring oscillator produced with a conventional inverter. With a single 1 V power supply (Vdd), SPICE calculation results showed that the VCO tuning range was 2.25 GHz to 3.65 GHz and that the average VCO gain was approximately 1.4 GHz/V in the range of a control voltage (Vc) from 0 to 1 V. Simulation also indicated that at a Vdd of 1 V the CG locked on a 50 MHz external clock and generated a 3.2 GHz internal clock (=50 MHz64). The jitter and power dissipation of the CG at 3.2 GHz oscillation and a Vdd of 1 V were less than 8.75 psec and 50 mW, respectively. The typical lock range was 2.90 GHz to 3.59 GHz which corresponded to a pull-in range of 45.3 MHz to 56.2 MHz.