A programmable clock generator, based on a phase-locked loop (PLL) circuit, has been developed with 0.5 µm CMOS triple-layer Al interconnection technology for use as an on-chip clock generator in a 300-MHz video signal processor. The PLL-based clock generator generates a clock signal whose frequency ranges from 50 to 350 MHz which is an integral multiple, from 2 to 16, of an external clock frequency. In order to achieve stable operation within this wide range, a voltage controlled oscillator (VCO) with selectable low VCO gain characteristics has been developed. Experimental results show that the clock generator generates a 297-MHz clock with a 27-MHz external clock, with jitter of 180 ps and power dissipation of 120 mW at 3.3-V power supply, and it can also oscillate up to 348 MHz with a 31.7-MHz external clock.

A 3.2 GHz, 50 mW, 1 V, GaAs clock pulse generator (CG) based on a phase-locked loop (PLL) circuit has been designed for use as an on-chip clock generator in future high speed processor LSIs. 0.5 µm GaAs MESFET and DCFL circuit technologies have been used for the CG, which consists of 224 MESFETs. An "enhanced charge-up current" inverter has been specially designed for a low power and high speed voltage controlled oscillator (VCO). In this new inverter, a voltage controlled dMESFET is combined in parallel with the load dMESFET of a conventional DCFL inverter. This voltage controlled dMESFET produces an additional charge-up current resulting in the new VCO obtaining a much higher oscillation frequency than that of a ring oscillator produced with a conventional inverter. With a single 1 V power supply (Vdd), SPICE calculation results showed that the VCO tuning range was 2.25 GHz to 3.65 GHz and that the average VCO gain was approximately 1.4 GHz/V in the range of a control voltage (Vc) from 0 to 1 V. Simulation also indicated that at a Vdd of 1 V the CG locked on a 50 MHz external clock and generated a 3.2 GHz internal clock (=50 MHz64). The jitter and power dissipation of the CG at 3.2 GHz oscillation and a Vdd of 1 V were less than 8.75 psec and 50 mW, respectively. The typical lock range was 2.90 GHz to 3.59 GHz which corresponded to a pull-in range of 45.3 MHz to 56.2 MHz.

A novel sampling comparator circuit is presented for extending the pull-in range of microwave phase-locked oscillators (PLOs). It performs both phase and frequency detection without any frequency dividers, and a GaAs MMIC prototype is developed and tested. The proposed comparator improves the pull-in range by about 10 times more than is possible with conventional sampling phase detectors.

A fully integrated digital PLL (Phase Locked Loop) with on-chip CMOS oscillator is described. Nominal division number of the variable divider is automatically tuned in this digital PLL and this feature makes it possible to widen the pull-in range. In general, output jitter may increase if the pull-in range is widened. To overcome this problem, output jitter is reduced by utilizing the dual loop architecture. Wide pull-in range enables us on-chip oscillator, which is not so precise as the expensive crystal oscillator. This CMOS oscillator must be carefully designed to be stable against the temperature and the supply voltage variations. Using these digital PLL techniques, together with the on-chip CMOS oscillator, a fully integrated PLL can be achieved. Circuits are designed for 1.544 Mbit/s ISDN primary rate interface, and 6.25% pull-in range is obtained.