IEICE TRANSACTIONS on Electronics
Elimination of Negative Charge-Up during High Current Ion Implantation
Summary :
The dielectric breakdown characteristics of a thin gate oxide during high-current ion implantation with an electron shower have been investigated by controlling the energy distribution of the electrons. Degradation of the oxide has also been discussed with regard to the total charge injected into the oxide during ion implantation in comparison with that of the TDDB (time dependent dielectric breakdown). Experimental results show that the high-energy and high-density electrons which concentrated in the circumference of the ion beam due to the space charge effect cause the degradation of the thin oxide. It was confirmed that eliminating the high-energy electrons by applying magnetic and electric fields lowers the electron energy at the wafer surface, thereby effectively suppressing the negative charge-up.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.459-463
- Publication Date
- 1994/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
- Category
- Process Technology
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Kazunobu MAMENO, Atsuhiro NISHIDA, Hideharu NAGASAWA, Hideaki FUJIWARA, Koji SUZUKI, Kiyoshi YONEDA, "Elimination of Negative Charge-Up during High Current Ion Implantation" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 3, pp. 459-463, March 1994, doi: .
Abstract: The dielectric breakdown characteristics of a thin gate oxide during high-current ion implantation with an electron shower have been investigated by controlling the energy distribution of the electrons. Degradation of the oxide has also been discussed with regard to the total charge injected into the oxide during ion implantation in comparison with that of the TDDB (time dependent dielectric breakdown). Experimental results show that the high-energy and high-density electrons which concentrated in the circumference of the ion beam due to the space charge effect cause the degradation of the thin oxide. It was confirmed that eliminating the high-energy electrons by applying magnetic and electric fields lowers the electron energy at the wafer surface, thereby effectively suppressing the negative charge-up.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_459/_p
Copy
@ARTICLE{e77-c_3_459,
author={Kazunobu MAMENO, Atsuhiro NISHIDA, Hideharu NAGASAWA, Hideaki FUJIWARA, Koji SUZUKI, Kiyoshi YONEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Elimination of Negative Charge-Up during High Current Ion Implantation},
year={1994},
volume={E77-C},
number={3},
pages={459-463},
abstract={The dielectric breakdown characteristics of a thin gate oxide during high-current ion implantation with an electron shower have been investigated by controlling the energy distribution of the electrons. Degradation of the oxide has also been discussed with regard to the total charge injected into the oxide during ion implantation in comparison with that of the TDDB (time dependent dielectric breakdown). Experimental results show that the high-energy and high-density electrons which concentrated in the circumference of the ion beam due to the space charge effect cause the degradation of the thin oxide. It was confirmed that eliminating the high-energy electrons by applying magnetic and electric fields lowers the electron energy at the wafer surface, thereby effectively suppressing the negative charge-up.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Elimination of Negative Charge-Up during High Current Ion Implantation
T2 - IEICE TRANSACTIONS on Electronics
SP - 459
EP - 463
AU - Kazunobu MAMENO
AU - Atsuhiro NISHIDA
AU - Hideharu NAGASAWA
AU - Hideaki FUJIWARA
AU - Koji SUZUKI
AU - Kiyoshi YONEDA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - The dielectric breakdown characteristics of a thin gate oxide during high-current ion implantation with an electron shower have been investigated by controlling the energy distribution of the electrons. Degradation of the oxide has also been discussed with regard to the total charge injected into the oxide during ion implantation in comparison with that of the TDDB (time dependent dielectric breakdown). Experimental results show that the high-energy and high-density electrons which concentrated in the circumference of the ion beam due to the space charge effect cause the degradation of the thin oxide. It was confirmed that eliminating the high-energy electrons by applying magnetic and electric fields lowers the electron energy at the wafer surface, thereby effectively suppressing the negative charge-up.
ER -
English
