Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
Summary :
We report on robust and low-power-consumption InP- and GaN-HEMT Low-Noise-Amplifiers (LNAs) operating in Q-band frequency range. A multi-stage common-gate (CG) amplifier with current reuse topology was used. To improve the survivability of the CG amplifier, we introduced a feedback resistor at the gate bias feed. The design technique was adapted to InP- and GaN-HEMT LNAs. The 75nm gate length InP HEMT LNA exhibited a gain of 18dB and a noise figure (NF) of 3dB from 33 to 50GHz. The DC power consumption was 16mW. The Robustness of the InP HEMT LNA was tested by injecting a millimeter-wave input power of 13dBm for 10 minutes. No degradation in a small signal gain was observed. The fabricated 0.12µm gate length GaN HEMT LNA exhibited a gain of 15dB and an NF of 3.2dB from 35 to 42GHz. The DC power consumption was 280mW. The LNA survived until an input power of 28dBm.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.5 pp.417-423
- Publication Date
- 2017/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.417
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Masaru SATO
Fujitsu Laboratories Ltd.
Yoshitaka NIIDA
Fujitsu Laboratories Ltd.
Toshihide SUZUKI
Fujitsu Laboratories Ltd.
Yasuhiro NAKASHA
Fujitsu Laboratories Ltd.
Yoichi KAWANO
Fujitsu Laboratories Ltd.
Taisuke IWAI
Fujitsu Laboratories Ltd.
Naoki HARA
Fujitsu Laboratories Ltd.
Kazukiyo JOSHIN
Fujitsu Laboratories Ltd.
Keyword
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Masaru SATO, Yoshitaka NIIDA, Toshihide SUZUKI, Yasuhiro NAKASHA, Yoichi KAWANO, Taisuke IWAI, Naoki HARA, Kazukiyo JOSHIN, "Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 5, pp. 417-423, May 2017, doi: 10.1587/transele.E100.C.417.
Abstract: We report on robust and low-power-consumption InP- and GaN-HEMT Low-Noise-Amplifiers (LNAs) operating in Q-band frequency range. A multi-stage common-gate (CG) amplifier with current reuse topology was used. To improve the survivability of the CG amplifier, we introduced a feedback resistor at the gate bias feed. The design technique was adapted to InP- and GaN-HEMT LNAs. The 75nm gate length InP HEMT LNA exhibited a gain of 18dB and a noise figure (NF) of 3dB from 33 to 50GHz. The DC power consumption was 16mW. The Robustness of the InP HEMT LNA was tested by injecting a millimeter-wave input power of 13dBm for 10 minutes. No degradation in a small signal gain was observed. The fabricated 0.12µm gate length GaN HEMT LNA exhibited a gain of 15dB and an NF of 3.2dB from 35 to 42GHz. The DC power consumption was 280mW. The LNA survived until an input power of 28dBm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.417/_p
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@ARTICLE{e100-c_5_417,
author={Masaru SATO, Yoshitaka NIIDA, Toshihide SUZUKI, Yasuhiro NAKASHA, Yoichi KAWANO, Taisuke IWAI, Naoki HARA, Kazukiyo JOSHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers},
year={2017},
volume={E100-C},
number={5},
pages={417-423},
abstract={We report on robust and low-power-consumption InP- and GaN-HEMT Low-Noise-Amplifiers (LNAs) operating in Q-band frequency range. A multi-stage common-gate (CG) amplifier with current reuse topology was used. To improve the survivability of the CG amplifier, we introduced a feedback resistor at the gate bias feed. The design technique was adapted to InP- and GaN-HEMT LNAs. The 75nm gate length InP HEMT LNA exhibited a gain of 18dB and a noise figure (NF) of 3dB from 33 to 50GHz. The DC power consumption was 16mW. The Robustness of the InP HEMT LNA was tested by injecting a millimeter-wave input power of 13dBm for 10 minutes. No degradation in a small signal gain was observed. The fabricated 0.12µm gate length GaN HEMT LNA exhibited a gain of 15dB and an NF of 3.2dB from 35 to 42GHz. The DC power consumption was 280mW. The LNA survived until an input power of 28dBm.},
keywords={},
doi={10.1587/transele.E100.C.417},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
T2 - IEICE TRANSACTIONS on Electronics
SP - 417
EP - 423
AU - Masaru SATO
AU - Yoshitaka NIIDA
AU - Toshihide SUZUKI
AU - Yasuhiro NAKASHA
AU - Yoichi KAWANO
AU - Taisuke IWAI
AU - Naoki HARA
AU - Kazukiyo JOSHIN
PY - 2017
DO - 10.1587/transele.E100.C.417
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2017
AB - We report on robust and low-power-consumption InP- and GaN-HEMT Low-Noise-Amplifiers (LNAs) operating in Q-band frequency range. A multi-stage common-gate (CG) amplifier with current reuse topology was used. To improve the survivability of the CG amplifier, we introduced a feedback resistor at the gate bias feed. The design technique was adapted to InP- and GaN-HEMT LNAs. The 75nm gate length InP HEMT LNA exhibited a gain of 18dB and a noise figure (NF) of 3dB from 33 to 50GHz. The DC power consumption was 16mW. The Robustness of the InP HEMT LNA was tested by injecting a millimeter-wave input power of 13dBm for 10 minutes. No degradation in a small signal gain was observed. The fabricated 0.12µm gate length GaN HEMT LNA exhibited a gain of 15dB and an NF of 3.2dB from 35 to 42GHz. The DC power consumption was 280mW. The LNA survived until an input power of 28dBm.
ER -
English
