IEICE TRANSACTIONS on Electronics
Compact Modeling of Expansion Effects in LDMOS
Summary :
In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.11 pp.1817-1823
- Publication Date
- 2012/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.1817
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Takahiro IIZUKA
Takashi SAKUDA
Yasunori ORITSUKI
Akihiro TANAKA
Masataka MIYAKE
Hideyuki KIKUCHIHARA
Uwe FELDMANN
Hans Jurgen MATTAUSCH
Mitiko MIURA-MATTAUSCH
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Takahiro IIZUKA, Takashi SAKUDA, Yasunori ORITSUKI, Akihiro TANAKA, Masataka MIYAKE, Hideyuki KIKUCHIHARA, Uwe FELDMANN, Hans Jurgen MATTAUSCH, Mitiko MIURA-MATTAUSCH, "Compact Modeling of Expansion Effects in LDMOS" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 11, pp. 1817-1823, November 2012, doi: 10.1587/transele.E95.C.1817.
Abstract: In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.1817/_p
Copy
@ARTICLE{e95-c_11_1817,
author={Takahiro IIZUKA, Takashi SAKUDA, Yasunori ORITSUKI, Akihiro TANAKA, Masataka MIYAKE, Hideyuki KIKUCHIHARA, Uwe FELDMANN, Hans Jurgen MATTAUSCH, Mitiko MIURA-MATTAUSCH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Compact Modeling of Expansion Effects in LDMOS},
year={2012},
volume={E95-C},
number={11},
pages={1817-1823},
abstract={In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.},
keywords={},
doi={10.1587/transele.E95.C.1817},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Compact Modeling of Expansion Effects in LDMOS
T2 - IEICE TRANSACTIONS on Electronics
SP - 1817
EP - 1823
AU - Takahiro IIZUKA
AU - Takashi SAKUDA
AU - Yasunori ORITSUKI
AU - Akihiro TANAKA
AU - Masataka MIYAKE
AU - Hideyuki KIKUCHIHARA
AU - Uwe FELDMANN
AU - Hans Jurgen MATTAUSCH
AU - Mitiko MIURA-MATTAUSCH
PY - 2012
DO - 10.1587/transele.E95.C.1817
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2012
AB - In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.
ER -
English
