Quantum key distribution (QKD) systems can generate unconditionally secure common keys between remote users. Improvements of QKD performance, particularly in key generation rate, have been required to meet current network traffic. A high-speed QKD system should be equipped with low-loss receivers with high visibility, highly efficient photon detectors with small dark count probability. A solution to these issues is to employ planar lightwave circuit (PLC) interferometers, single photon detection circuits and modules, together with multi-wavelength channels transmission using wavelength division multiplexing (WDM) technique.

The trench-gate type high-voltage (HV) MOSFET is one of the variants of HV-MOSFET, typically with its utility segments lying on a larger power consumption domain, compared to planar HV-MOSFETs. In this work, the HiSIM_HV compact model, originally intended for planar LDMOSFETs, was adequately extended to accommodate trench-gate type HV-MOSFETs. The model formulation focuses on a closed-form description of the current path in the highly resistive drift region, specific to the trench-gate HV-MOSFETs. It is verified that the developed compact expression can capture the conductivity in the drift region, which varies with voltage bias and device technology such as trench width. The notable enhancement of current drivability can be accounted for by the electrostatic control exerted by the trench gate within the framework of this model.

In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.

In this invited paper, software defined network (SDN)-based approaches for future cost-effective optical mobile backhaul (MBH) networks are discussed, focusing on key principles, throughput optimization and dynamic service provisioning as its use cases. We propose a novel physical-layer aware throughput optimization algorithm that confirms > 100Mb/s end-to-end per-cell throughputs with ≥2.5Gb/s optical links deployed at legacy cell sites. We also demonstrate the first optical line terminal (OLT)-side optical Nyquist filtering of legacy 10G on-off-keying (OOK) signals, enabling dynamic >10Gb/s Orthogonal Frequency Domain Multiple Access (OFDMA) λ-overlays for MBH over passive optical network (PON) with 40-km transmission distances and 1:128 splitting ratios, without any ONU-side equipment upgrades. The software defined flexible optical access network architecture described in this paper is thus highly promising for future MBH networks.