A 167-MHz 1-Mbit CMOS synchronous cache SRAM was developed using 0.40-µm process technology. The floor plan was designed so that the address registers are located in the center of the chip, and high-speed circuits were developed such as the quasi latch (QL) sense amplifier and the one-shot control (OSC) output register. To maintain suitable setup and hold time margins, an equivalent margin (EM) design method was developed. 167-MHz operation was measured at a supply voltage of 2.5 V and an ambient temperature of 75. The same margins 1.1 ns of the setup time and hold time were measured for the specifications of a setup time of 2.0 ns and a hold time of 0.5 ns.

We have applied hot-carrier circuit-level simulation to memory peripheral circuits of a few thousand to over 12K transistors using a simple but accurate degradation model for reliability verification of actual memory products. By applying simulation to entire circuits, it was found that the location of maximum degradation depended greatly upon circuit configuration and device technology. A design curve has been developed to quickly relate device-level DC lifetime to circuit-level performance lifetime. Using these results in conjunction with a methodology that has been developed to predict hot-carrier degradation early in the design cycle before TEG fabrication, accurate total-circuit simulation is applied early in the design process, making reliability simulation a crucial design tool rather than a verification tool as technology advances into the deep sub-micron high clock rate regime.

In at-speed scan testing, capture power is a serious problem because the high power dissipation that can occur when the response for a test vector is captured by flip-flops results in excessive voltage drops, known as IR-drops, which may cause significant capture-induced yield loss. In low capture power test generation, the test vectors that violate capture power constraints in an initial test set are defined as capture-unsafe test vectors, while faults that are detected solely by capture-unsafe test vectors are defined as unsafe faults. It is necessary to regenerate the test vectors used to detect unsafe faults in order to prevent unnecessary yield losses. In this paper, we propose a new low capture power test generation method based on fault simulation that uses capture-safe test vectors in an initial test set. Experimental results show that the use of this method reduces the number of unsafe faults by 94% while requiring just 18% more additional test vectors on average, and while requiring less test generation time compared with the conventional low capture power test generation method.