Analog multipliers are one of the most important building blocks in analog signal processing circuits. The performance with high linearity and wide input range is usually required for analog four-quadrant multipliers in most applications. Therefore, a highly linear and wide input range four-quadrant CMOS analog multiplier using active feedback is proposed in this paper. Firstly, a novel configuration of four-quadrant multiplier cell is presented. Its input dynamic range and linearity are improved significantly by adding two resistors compared with the conventional structure. Then based on the proposed multiplier cell configuration, a four-quadrant CMOS analog multiplier with active feedback technique is implemented by two operational amplifiers. Because of both the proposed multiplier cell and active feedback technique, the proposed multiplier achieves a much wider input range with higher linearity than conventional structures. The proposed multiplier was fabricated by a 0.6 µm CMOS process. Experimental results show that the input range of the proposed multiplier can be up to 5.6Vpp with 0.159% linearity error on VX and 4.8Vpp with 0.51% linearity error on VY for 2.5V power supply voltages, respectively.

Gate delay evaluation is always a vital concern for high-performance digital VLSI designs. As the feature size of VLSIs decreases to the nano-meter region, the work to obtain an accurate gate delay value becomes more difficult and time consuming than ever. The conventional methods usually use iterative algorithms to ensure the accuracy of the effective capacitance Ceff, which is usually used to compute the gate delay with interconnect loads and to capture the output signal shape of the real gate response. Accordingly, the efficiency is sacrificed. In this paper, an accurate and efficient approach is proposed for gate delay estimation. With the linear relationship of gate output time points and Ceff, a polynomial approximation is used to make the nonlinear effective capacitance equation be solved without iterative method. Compared to the conventional methods, the proposed method improves the efficiency of gate delay calculation. Meanwhile, experimental results show that the proposed method is in good agreement with SPICE results and the average error is 2.8%.

In deep submicron designs, predicting gate delays with interconnect load is a noteworthy work for Static Timing Analysis (STA). The effective capacitance Ceff concept and the Thevenin model that replaces the gate with a linear resistor and a voltage source are usually used to calculate the delay of gate with interconnect load. In conventional methods, it is not considered that the charges transferred into interconnect load and Ceff in the Thevenin model are not equal. The charge difference between interconnect load and Ceff has the large influence to the accuracy of computing Ceff. In this paper, an advanced effective capacitance model is proposed to consider the above problem in the Thevenin model, where the influence of the charge difference is modeled as one part of the effective capacitance to compute the gate delay. Experimental results show a significant improvement in accuracy when the charge difference between interconnect load and Ceff is considered.