This paper describes IDDQ testability for bridging faults in a variety of flip-flops. The flip-flop is a basic element of the sequential circuit and there are various structures even for the same type. In this paper, we use five kinds of master-slave D-type flip-flops as the circuit under test. Target faults are two-line resistive bridging faults extracted from a circuit layout. A flip-flop with a deliberately introduced bridging fault is simulated by the SPICE simulator. Simulation results show that IDDQ testing cannot detect faults existing at specific points in some flip-flops, and this problem depends on the flip-flop structure. However, IDDQ testing has high fault coverage ( 98%) compared with traditional logic testing. We also examine performances of fully IDDQ testable flip-flops.

Robust test has been proposed to overcome the potential invalidation of the two-patten test due to hazards. However, it is difficult to generate robust test patterns and they may not exist for some stuck-open faults. In this paper, to overcome this difficulty, we propose a new testable design method with the robustness. Since a faulty gate is regarded as a tri-state element, the gate output node can be set to arbitrary logic value from the outside of a circuit. In the proposed method, on the basis of this idea, each output of the gate can be set to any logic value by an extra driver. Then, it is checked what value the output gives. Any stuck-open fault can be detected by one test pattern by this method which can be implemented relatively easily. To reduce the number of observalbe points, we also consider a method for selecting internal observable points without losing the property of the robustness. As a result, output nodes of reconvergent gates are used as internal observable points. Experimental results of the pattern generation for some benchmark circuits are given.

A method for detecting interconnect open faults of CMOS combinational circuits by applying a ramp voltage to the power supply terminal is proposed. The method can assign a known logic value to a fault location automatically by applying a ramp voltage and as a result, it requires only one test vector to detect a fault as a delay fault or an erroneous logic value at primary outputs. In this paper, we show fault detectability and effectiveness of the proposed method by simulation-based and theoretical analysis. We also expose that the method can be applicable to every fault location in a circuit and open faults with any value. Finally, we show ATPG results that are suitable to the proposed method.

Current testing has been proposed as an alternative technique for testing fully CMOS digital LSIs. Current testing has higher fault coverage than conventional stuck-at fault (SAF) testing and is more economical because it detects a wide range of faults and requires fewer test vectors than does SAF testing. We have proposed a current testing that measures the integral of the power supply current (IDD) during one clock period including the switching current. Since this method cannot be affected by the switching current, it can be used to test an LSI operating at a relatively high clock freuqnecy. This paper presents an improved current testing method for CMOS digital and analog LSIs. The method uses two current values (i.e., an upper limit and a lower limit) and judges the circuit under test to be faulty if the measured IDD is outside these limits. The proposed current testing is evaluated here for some kinds of faults (e.g., the bridging fault and the breaking fault) in digital and mixed-signal LSIs, and its efficiency of the current testing using SPICE3.

This paper describes a novel IDDQ sensor circuit that is driven by only an abnormal IDDQ. The sensor circuit has relatively high sensitivity and can operate at a low supply voltage. Based on a very simple idea, it requires two additional power supplies. It can operate at either 5-V or 3.3-V VDD with the same design. Simulation results show that it can detect a 16-µA abnormal IDDQ at 3.3-V VDD. This sensor circuit causes a smaller voltage drop and smaller performance penalty in the circuit under test than other ones.

The relationship between the change in transistor operation regions and the fault behavior of a mixed-signal circuit having a bridging fault was investigated. We also discussed determination of transistors to be observed for estimating the fault behavior. These results will be useful for modeling faulty behaviors and analyzing and diagnosing faults in mixed-signal circuits.

In this paper, a useful technique is proposed for realizing high speed IDDQ tests. By using the technique, load capacitors of the CMOS logic gates can be charged quickly, whose output logic values change from L to H by applying a test input vector to a circuit under test. The technique is applied to built-in IDDQ sensor design and external IDDQ sensor design. It is shown experimentally that high speed IDDQ tests can be realized by using the technique.

This paper proposes an operation-region model for analyzing and testing analog and mixed-signal circuits, which is based on observation of change in MOSFET operation regions. First, the relation between the change in MOSFET operation regions and the fault behavior of a mixed-signal circuit containing a bridging fault is investigated. Next, we propose an analysis procedure based on the operation-region model and apply it to generate the optimal input combination for testing the circuit. We also determine which transistors should be observed in order to estimate the circuit behavior. Since the operation-region model is a method for modeling circuit behavior abstractly, the proposed method will be useful for modeling circuit behavior and for analyzing and testing many kinds of analog and mixed-signal circuits.

In this paper, we analyze behaviors of bridging faults in CMOS synchronous sequential circuits based on transient analysis. From analysis results, we expose dynamic and analog behaviors of the circuit caused by the bridging faults, which are oscillation, asynchronous sequential behavior, IDDT failure and IDDQ failure as well as logic error. In order to detect this kind of fault, we show that not only IDDQ testing but also IDDT testing and logic testing which guarantees correct state transitions are required.

This work presents an analysis of IDDQ dependency on the primary current that flows through the bridging fault and driven gates current. A maximum primary current depends only on the test vectors which minimize channel resistances of transistors. The driven gates current generates when intermediate voltage occurs on the faulty node with creation current path between VDD and GND through the driven gates, and its value depends on circuit parameters such as transistor sizes and fan-in number of driven gates.