A method for evaluating the degradation of subband adaptive digital filters (ADF) is presented. The performance of a simple ADF that uses critical sampling is mainly influenced by the subband filter bank's characteristics and the finite precision arithmetic operations used. This paper considers a two-channel mirror filter bank and a normalized least mean square algorithm with floating point arithmetic. The theoretical ERLE (Echo Return Loss Enhancement) and the theoretical relationships between the output error of the ADF and the circuit parameters considering finite precision A/D conversion and finite word length effects in floating point arithmetic operation are obtained using an equivalent noise model. Simulation results are found to be in good agreement to analytical values; the difference is only 3 to 5 dB.

We present a method of extracting the digital inphase (I) and quadrature (Q) components from oversampled bandpass signals using narrow-band bandpass Hilbert transformers. Down-conversion of the digitized IF signals to baseband and reduction of the quantization noise are accomplished by the multistage decimator with the complex coefficient bandpass digital filters (BPFs), which construct the bandpass Hilbert transformers. Most of the complex coefficient BPFs in the multistage decimator can be replaced with the lowpass filters (LPFs) under some conditions, which reduces computational burden. We evaluate the signal to quantization noise ratio of the I and Q components for the sinusoidal input by computer simulation. Simulation results show that the equivalent amplitude resolution of the I and Q components can be increased by 3 bits in comparison with non-oversampling case.

A new gradient type adaptive algorithm is proposed in this paper. It is formulated based on the least squares criteria while the conventional gradient algorithms are based on the least mean square criteria. The proposed algorithm has two variable parameters and by changing them we can adjust the characteristic of the algorithm from the RLS to the LMS depending on the environment. This capability of adjustment achieves the possibility of providing better solutions. However, not only it provides better solutions than the conventional algorithms under some conditions but also it provides a very interesting theoretical view point. It provides a unified view point of the adaptive algorithms including the conventional ones, i.e., the LMS or the RLS, as limited cases and it enables us to analyze the bounds for those algorithms.

Kumar and Billinton have presented a new technique for obtaining the steady-state probabilities from a flow graph based on Markov model. By examining the graph and choosing suitable input and output nodes, the steady-state probabilities can be obtained directly by using the flow graph. In this paper this graphical technique is applied for a k-out-of-n: G repairable system. Consequently a new derivation way of the formulae for the steady-state availability and MTBF is obtained.

In this paper we introduce the Piecewise Linear Radial Basis Function Model (PWL-RBFM), a new nonlinear model that uses the well known RBF framework to build a PWL functional approximation by combining an l1 norm with a linear RBF function. A smooth generalization of the PWL-RBF is proposed: it is obtained by substituting the modulus function with the logistic function. These models are applied to several time series prediction tasks.

We developed a simple, practical, adaptive data compression algorithm of the LZ78 class. According to the Lempel-Ziv greedy parsing, a string boundary is not related to the statistical history modeled by finite-state sources. We have already reported an algorithm classifying data into subdictionaries (CSD), which uses multiple subdictionaries and conditions the current string by using the previous one to obtain a higher compression ratio. In this paper, we present a practical implementation of this method suitable for any kinds of data, and show that CSD is more efficient than the LZC which is the method used by the program compress available on UNIX systems. The CSD compression performance was about 10% better than that of LZC with the practical dictionary size, an 8k-entry dictionary when the test data was from the Calgary Compression Corpus. With hashing, the CSD processing speed became as fast as that of LZC, although the CSD algorithm was more complicated than LZC.

Dynamic programming based one dimensional-two dimensional adaptive pattern matching methods were investigated. In these methods, the reference pattern is represented as a sequence of directional vectors and the input pattern as two dimensional dot pattern. The input pattern needs no preskeletization or local feature analysis, and thus stroke order free top-down pattern matching is carried out. As the starting point, Rubber String Matching algorithm using fixed direction vectors was newly investigated. At latter stages, the reference pattern vectors were permitted some freedom in their directions to cope with abrupt aberrations in input pattern line segments, improving the flexibility of matching. Two cases were considered, allowing 45and approximately 20deviations from the vector directions. The 20version gave the best recognition score.

A design of a high power laser structure is presented which is based on an increase of the cavity length as well as a maximization of the stripe width. This requires a low value for the modal attenuation coefficent and a low optical confinement factor. A model is presented from which the modal gain, the confinement factor, the active region thickness, the stripe width, the length and the reflection coefficients can be calculated. A variant for all design parameters needed to reach 1 W emission in the fundamental lateral mode is given. These values are used to design the epitaxial structure.

This paper proposes an adaptive modulation/TDMA scheme to achieve high capacity personal multi-media communication systems. TDMA is employed to cope with various bit rate for multi-media services. The modulation scheme is selected from 1/4-rate QPSK, 1/2-rate QPSK, QPSK, 16QAM and 64QAM according to the received C/IC (power ratio of the desired signal to the co-channel interference) and the delay spread. The spectral efficiency is evaluated by using the simulated bit error rate (BER) performance as well as the cumulative distribution of the C/IC with parameters of cell configurations. The results show that the spectral efficiency of the proposed scheme is 3.5 times higher than that of the conventional QPSK systems at the outage probability of 10%, and the effect is more remarkable at lower outage probability. The results also show that the proposed adaptive modulation is effective in improving delay spread immunity.

ACk is the class of problems solvable by an alternating Turing machine in space O(log n) and alternation depth O(logk n) [S. A. Cook, A taxonomy of problems with fast parallel algorithms, Inform. Contr. vol. 64]. We consider a game played by two persons: each player alternately moves a marker along an edge of a given digraph, and the first palyer who cannot move loses the game. It is shown that the problem to determine whether the first player can win the game on a digraph with n nodes exactly after logk n moves is complete for ACk nuder NC1 reducibility.

The static and dynamic characteristics of the lateral IGBT on the SOI film when the collector voltage of the IGBT is applied to the substrate are invesigated for its application to the high side switch. The measurements on the blocking capability and the switching characteristics under an inductive load are carried out with varying the thickness of the SOI film. The 260 V IGBT can be fabricated on the 5 µm thick SOI film without the special device structure. It is confirmed that the switching speed depends strongly on the SOI film thickness, not on the substrate bias. The dynamic latch-up current during the turn-off transient increases with the decrease in the SOI film thickness. This is caused by the large transient substrate current. This paper exhibits that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on the thin SOI film.

Radar signals fluctuate because of the incoherent scattering of raindrops. Dual-polarization radar estimates rainfall rates from differential reflectivity (ZDR) and horizontal reflectivity (ZH). Here, ZDR and ZH are extracted from fluctuating radar signals by averaging. Therefore, instrumentally measured ZDR and ZH always have errors, so that estimated rainfall rates also have errors. This paper evaluates rainfall rate errors caused by signal fluctuation. Computer simulation based on a physical raindrop model is used to investigate the standard deviation of rainfall rate. The simulation considers acquisition time, and uses both simultaneous and alternate sampling of horizontal and vertical polarizations for square law and logarithmic estimators at various rainfall rates and elevation angles. When measuring rainfall rates that range from 1.0 to 10.0mm/h with the alternate sampling method, using a logarithmic estimator at a relatively large elevation angle, the estimated rainfall rates have significant errors. The simultaneous sampling method is effective in reducing these errors.

A novel nonlinear directional coupler consisting of tapered and uniform waveguides with self-focusing or self-defocusing nonlinear material is proposed to improve all-optical switching characteristics. Its switching characteristics are analyzed by using a beam propagation method based on the Galerkin's finite element technique (FE-BPM), in which nonuniform sampling spacings along the transverse coordinate are adopted. It is presented that the tapered nonlinear directional coupler shows fairly distinct 'high' and 'low' states of output power with steep transition versus input power. This property is discussed in comparison with conventional nonlinear directional couplers consisting of uniform symmetric and uniform asymmetric coupled waveguides. In addition, the effects of loss on the characteristics of tapered nonlinear directional coupler are examined.

Development of a large-scale mobile communications network (IMN: Intelligent Mobile communications Network), as an infrastructure integrating multimedia functions, is indispensable for the support of future mobile communication services aiming toward "personalization," "intelligence," and "multimedia services." This paper discusses the aims of mobile communications and the outline of network technology aspects of PDC (Personal Digital Cellular) network which is currently in service. In addition, the future prospect of mobile communication technologies is discussed with special focuses on the support of universal mobility, network architecture including mobile communications platform, and multimedia technologies in the transport and access systems.

We studied the selective epitaxy of GaAs grown by a technique called pulsed-jet epitaxy. Pulsed-jet epitaxy is a kind of atomic layer epitaxy (ALE) based on low-pressure metalorganic vapor-phase epitaxy (MOVPE). We compared growth behavior and layers grown by ALE and MOVPE. During ALE we supplied trimethylgallium (TMGa) and arsine (AsH3) alternately; however, during MOVPE we supplied TMGa and AsH3 simultaneously. At a growth temperature of 500, we obtained a better growth selectivity using ALE than using MOVPE. The lateral thickness profile of the ALE-grown GaAs layer at the edge of SiO2 mask was uniform. In contrast, the MOVPE growth rate was enhanced near the mask edge. Using ALE, we selectively grew GaAs epilayers even at mask openings with submicron widths. Scanning electron microscopy revealed that the ALE selectively grown structures had an uniform thickness profile, though the facets surrounding the structures depended on the orientation of mask stripes. After MOVPE, however, the (001) surface of the deposited layer was not flat because of the additional lateral diffusion of the growth species from the gas phase and/or the mask surface and some crystal facets. The experimental results show that, using ALE, we can control the shape of selectively grown structures. Selective epitaxy by ALE is a promising technique for fabricating low-dimensional quantum effect devices.

A numerical method is introduced which is suitable for mode analysis in an optical resonator with complicated refractive-index variations such as vertical cavity surface emitting lasers (VCSELs). In this method, the optical field of a laser mode is expressed as a linear combination of component fields with their coefficents to be determined. After a hypothetical boundary is set surrounding the region to be analyzed, the component fields are obtained by numerically integrating the wave equation in the inside region using the conditions on part of the boundary as the initial values of the integration. The total field, which is a linear combination of these fields, satisfies the equation and the selected part of the boundary conditions regardless of the coefficients. The conditions imposed on the total field on the rest of the boundary lead to a matrix eigenvalue problem, from which the optical frequency and the coefficients are obtained. The matrix expresses only boundary conditions and, therefore, its size is much smaller than that of a matrix expressing bulk conditions, as appears in the finite element method or the finite difference method. At the same time, this method has the advantage of adaptability for graded-index problems in contrast to conventional boundary formalisms such as the boundary element method and the mode matching method, because in the present method the component fields (or base functions) are calculated for individual index distributions while in these methods an inflexible set of base functions is used. As an example of the application of the method, mode properties in gain-guided VCSELs are analyzed using this method based on a two-dimensional model. This is the first model that takes into account the effects of standing-wave formation in the resonator and of the incident angle- and polarization-dependence of reflectivity. The ability to treat these effects makes the present method suitable for VCSELs equipped with a thin active layer and with multi-layer reflectors. Basic properties including polarization, threshold gain, oscillation wavelegths, and deflection of far-field patterns have been predicted for various cavity sizes and for various gradients in gain distributions. The major results of the analysis are: TE modes have lower thresholds than TM modes; the laser beam can be steered by tailoring the gain distribution as with edge-emitting lasers.

A full CMOS cell technology for high density SRAMs has been developed. A 0.4 µm n+/p+ spacing has been achieved by a shallow trench isolation with a retrograde and a shallow well design. Dual gate 0.35 µm n- and p-channel MOSFETs were used for the high density full CMOS SRAM cell. The side-wall inversion problem to which MOSFETs are subject due to the trench isolation structure has been controlled by combining taper angled trench etching and a rounded trench edge shape. A dual gate 0.4 µm nMOS/pMOS spacing has also been accomplished with no lateral gate dopant diffusion by an enlarged grain size tungsten polycide gate structure. These techniques can resolve the bottleneck problem of full CMOS SRAM cell size reduction, and realize a competitive cell size against conventional polysilicon resistor load SRAM cell (E/R type cell) or thin-film-transistor load SRAM cell (TFT type cell) structures. A test chip of a 256 k bit full CMOS SRAM was fabricated to verify the process integration of the shallow trench isolation with the retrograde shallow well design and the dual gate CMOS structure. It has been recognized that the above techniques are possible solutions for deep sub-micron high density full CMOS SRAM cell structure.

The progress of LSI technologies makes it possible to fabricate 256 MDRAM. However, it depends on the cost effectiveness of device fabrication that LSI memory can continue to be the technology driver or not. It is indispensable to make the device, process, and equipment as simple as possible for next generation LSI. For example, wavefront technologies in lithography, high energy ion implantation, and simple DRAM cell with SOI structure or high dielectric constant capacitor, are under development to satisfy both device performance improvement and process simplicity.

High temperature superconductors are eminently suitable for use in high frequency devices because of their large energy gap. We fabricated weak link Josephson junctions connected in series. The junctions were constructed of EuBa2Cu3O7-x (EBCO) superconducting thin films on bicrystal MgO substrates. We measured their microwave broadband detection (video detection) characteristics. The responsivity (Sr) of the junctions depended on the bias current and their normal state resistance. The array junctions were effective in increasing normal state resistance. We obtained a maximum Sr of 22.6 [V/W].

We have systematically grown and characterized (Bi, Pb)2Sr2CaCu2Oy (BPSCCO) single crystals, and investigated the tunneling properties and the intrinsic Josephson effects of the single crystals as a function of the nominal composition of Pb, x. It was observed that Pb atoms (ions) were monotonically substituted for Bi atoms (ions) in the (Bi, Pb)-O layers of the crystals with increasing x in a region of 0x0.5, while the modulation structure was maintained in a range of 0x0.3, but disappeared in x0.3, accompanying the decrease of c-lattice parameter and Tc. Moreover, it was found that the energy gaps Δ of BPSCCO depend hardly on x for x0.5, which are about 24 meV, so that the Pb-induced electronic change in the (Bi, Pb)-O layer do not perturb the electronic states in this superconducting system. And it was confirmed that the currentvoltage characteristics of the BPSCCO single crystals had multiple resistive branches corresponding to a series array of several hundreds Josephson junctions, and showed Shapiro steps and zero-crossing steps with the voltage separation of the order of mV resulting from the phase locking of about a hundred Josephson junctions among them under microwave irradiation. The estimated number of junctions gave the concept that the intrinsic Josephson junctions consist of the superconducting block layers and the insulating layers in the BPSCCO single crystals.