A leaky-bucket-with-gate algorithm is proposed to control connection-setup congestion in telecommunication networks providing multimedia services, in place of the call-gapping algorithm used in telephone networks. Multimedia services may use more than one connection simultaneously, while standard telephone services use only one connection at a time. A set of connections used to construct a multimedia service is called a correlated connection group, and the setup requests of such a group form correlated request group. A correlated request group is assumed to be accepted into the network only when all the connection-setup requests for the group are accepted. In this paper, the proposed leaky-bucket-with-gate algorithm, a pure leaky-bucket algorithm, and a call-gapping algorithm are evaluated by simulating traffic with a mix of correlated and uncorrelated connection-setup requests, which models setup requests for video conferencing and telephone services. The simulation results show that the proposed algorithm accepts correlated request groups more efficiently than the pure leaky-bucket and call-gapping algorithms under the simulated traffic conditions, except when the interarrival time in a correlated request group is longer than the acceptance interval. We also present queueing analysis for determining the control parameters in the proposed algorithm. Implementation of this algorithm will facilitate the handling of both setup request traffic for correlated connection groups and for uncorrelated connections in multimedia networks.

The paper discusses the possibility of building semiconductor lasers whose wavelength stays nearly constant with ambient temperature variation. Several factors affecting the lasing wavelength change with temperature variation in both distributed feedback lasers and Fabry-Perot lasers are addressed and the optimum design of bandgap temperature dependence for the active layer material is discussed. It is pointed out that the most important challenge we face in building temperature-insensitive wavelength lasers is the development of a temperature-insensitive bandgap material for the active layer. Based on published data, it is speculated that such a laser could be developed using a Hg1-xCdxTe/CdTe double heterostructure. Although no data is available yet, we expect a Ga1-xInxAs1-yBiy III-V alloy semiconductor can be used for this purpose. Recently reported T1xIn1-x-yGayP III-V alloy semiconductor might be another promising candidate. Such lasers will greatly advance applications of WDM (Wavelength-Division-Multiplexing) technology to optical fiber communication systems and contribute to network innovations.

The charge neutralized at a small gap discharge has been evaluated from measured electromagnetic fields by two methods. The small gap discharges simulate ESD events. The evaluated charge decreases rapidly as a step shape immediately in a moment of the discharge. The accumulated static charge and the risetime of the neutralization step increase with the gap length. When the gap length is 0.1mm, risetime and the initial static charge are about 0.3ns and 5.6nC, respectively.

Various kinds of new architectures have been proposed to enhance operating performance of the DRAM. This paper reviews these architectures including EDO, SDRAM, RDRAM, EDRAM, and CDRAM. The EDO slightly modifies the output control of the conventional DRAM architecture. Other innovative architectures try to enhance the performance by taking advantage of DRAM's internal multiple bits architecture with internal pipeline, parallel-serial conversion, or static buffers/on-chip cache. A quantitative analysis based on an assumption of wait cycles was made to compare PC system performance with some architectures. The calculation indicated the effectiveness of external or on-chip cache. Future trends cover high-speed I/O interface, unified memory architecture, and system integrated memory. The interface includes limited I/O swing such as HSTL and SSTL to realize more than 100MHz operation. Also, Ramlink and SyncLink are briefly reviewed as candidates for next generation interface. Unified memory architecture attempts to save total memory capacity by combining graphics and main memory. Advanced device technology enables system integration which combine system logic and memory. It suggests one potential direction towards system on a chip in the future.

A dynamic measurement method of static R/W skew caused by MR-Inductive element alignment error is discussed. A geometrical model for the displacement between a write gap and a read gap on a swing arm is formulated. A measurement method wthich employs read-after-write procedure on disk surfaces in a drive is proposed. A simulation results is reported. It contributes to increase the track densities of HDDs using MR/Inductive heads in the region of more than 200 TPMM (5000 TPI).

We have developed a planar devic technology consisting of 0.15-µm Au/WSiN-gate GaAs-heterostructure MESFETs (HMESFETs) fabricated by self-aligned ion-implantation. The gate-drain breakdown voltage has been improved to 10 V by using an asymmetric LDD structure, and the maximum oscillation frequency is 190 GHz. Because asymmetric and symmetric FETs can be fabricated simultaneously, this technology is suitable for use in making multi-functional millimeter-wave MMICs.

The wave forms of electric and magnetic fields radiated by short gap discharges are measured to analyze electrostatic discharge (ESD) events in the near-field zone with the monopole antennas, the loop antenna and the 5.5GHz bandwidth waveform digitizer. The antenna outputs are corrected by the measured characteristics of the antennas. The relations between the measured electric field and the discharge currents are discussed.

The theoretical modelling bandgap narrowing and percentage of ionized impurity atoms for uncompensated uniformly doped silicon containing conventional impurities (B, P, As, Sb) under thermodynamic-equilibrium conditions is presented. As distinct from existing approaches, this modelling is valid for impurity concentrations up to electrically-active-impurity-concentration limits and for the temperature range from 40 K up to 400 K. A relevant and efficient calculation software is proposed. The results of the calculations are compared with the results extracted by many authors from measurement data. A good agreement between these results is noted and possible reasons of some discrepancies are pointed out. The present modelling and software can be used for investigation of BJT charge-neutral regions as well as diffused or implanted resistors.

In order to investigate the characteristics of the superconducting gap structures of BSCCO oxide superconductor, tunneling spectrum measurements were carried out with several junctions on the bulk single crystal surfaces. Point contact tunneling studies by means of the M/I/S and S/(I)/S junctions have shown the reproducible gap values, 2Δ (//c-axis) of 402 meV, at the cleaved crystal surfaces, and the ratio of 2Δ(//)/kBTc5.50.3 indicates the strong coupling superconductor of this material. Somewhat larger gap values, 2Δmax(c-axis)701 meV, have been also observed at the lateral surface, and these various gap values observed on each surface of the same crystal indicate the characteristic of the large gap anisotropy, Δ()/Δ(//)1.8, of this material.

Power transmission properties are investigated for a butt-joint which contains an air gap between an isotropic planar waveguide and an anisotropic one whose optical axis is lying in the plane defined by the propagation axis and the normal of the waveguide surface. New transmission coefficients are introduced for estimating the optical-power which is launched out into the gap from the incoming waveguide. Wave propagation through the gap is analyzed on the basis of the BPM concept. And the power transmitted across the interface between the gap and the outgoing waveguide is evaluated by means of the overlap integral of the field profiles. The effects of the air gap and the refractive index of filling liquid as well as axial displacement and angular misalignment are discussed on the basis of numerical results.

We present a new apparent bandgap narrowing model for semiconductor device simulation. The new model is derived from revised data of previous measurements on the apparent bandgap narrowing by using a corrected intrinsic carrier concentration. The revised values reveal sufficient agreement with our theoretical calculation. The new model is implemented in a triangular mesh device simulator TRIMEDES. Simulated BJT current-voltage and current-temperature characteristics using the proposed model reveal excellent agreement with measurements.