This study proposes a heterogeneous integration of precise and approximate storage in data center storage. The storage control engine allocates precise and error-tolerant applications to precise and approximate storage, respectively. The appropriate use of both precise and approximate storage is examined by applying a non-volatile memory capacity algorithm. To respond to the changes in application over time, the non-volatile memory capacity algorithm changes capacity of storage class memories (SCMs), namely the memory-type SCM (M-SCM) and storage-type SCM (S-SCM), in non-volatile memory resource. A three-dimensional triple-level cell (TLC) NAND flash is used as a large capacity memory. The results indicate that precise storage exhibits a high performance when the maximum storage cost is high. By contrast, with a low maximum storage cost, approximate storage exhibits high performance using a low bit cost approximate multiple-level cell (MLC) S-SCM.

This paper formulates minimal word-line (WL) delay time with pre-emphasis pulses to design the pulse width as a function of the overdrive voltage for large memory arrays such as 3D NAND. Circuit theory for a single RC line only with capacitance to ground and that only with coupling capacitance as well as a general case where RC lines have both grounded and coupling capacitance is discussed to provide an optimum pre-emphasis pulse width to minimize the delay time. The theory is expanded to include the cases where the resistance of the RC line driver is not negligibly small. The minimum delay time formulas of a single RC delay line and capacitive coupling RC lines was in good agreement (i.e. within 5% error) with measurement. With this research, circuit designers can estimate an optimum pre-emphasis pulse width and the delay time for an RC line in the initial design phase.

As NAND flash-based storage has been settled, a flash translation layer (FTL) has been in charge of mapping data addresses on NAND flash memory. Many FTLs implemented various mapping schemes, but the amount of mapping data depends on the mapping level. However, the FTL should contemplate mapping consistency irrespective of how much mapping data dwell in the storage. Furthermore, the recovery cost by the inconsistency needs to be considered for a faster storage reboot time. This letter proposes a novel method that enhances the consistency for a page-mapping level FTL running a legacy logging policy. Moreover, the recovery cost of page mappings also decreases. The novel method is to adopt a virtually-shrunk segment and deactivate page-mapping logs by assembling and storing the segments. This segment scheme already gave embedded NAND flash-based storage enhance its response time in our previous study. In addition to that improved result, this novel plan maximizes the page-mapping consistency, therefore improves the recovery cost compared with the legacy page-mapping FTL.

This paper analyzes the optimal SSD configuration including emerging non-volatile memories such as quadruple-level cell (QLC) NAND flash memory [1] and storage class memories (SCMs). First, SSD performance and SSD endurance lifetime of hybrid SSD are evaluated in four configurations: 1) single-level cell (SLC)/QLC NAND flash, 2) SCM/QLC NAND flash, 3) SCM/triple-level cell (TLC)/QLC NAND flash and 4) SCM/TLC NAND flash. Furthermore, these four configurations are compared in limited cost. In case of cold workloads or high total SSD cost assumption, SCM/TLC NAND flash hybrid configuration is recommended in both SSD performance and endurance lifetime. For hot workloads with low total SSD cost assumption, however, SLC/QLC NAND flash hybrid configuration is recommended with emphasis on SSD endurance lifetime. Under the same conditions as above, SCM/TLC/QLC NAND flash tri-hybrid is the best configuration in SSD performance considering cost. In particular, for prxy_0 (write-hot workload), SCM/TLC/QLC NAND flash tri-hybrid achieves 67% higher IOPS/cost than SCM/TLC NAND flash hybrid. Moreover, the configurations with the highest IOPS/cost in each workload and cost limit are picked up and analyzed with various types of SCMs. For all cases except for the case of prxy_1 with high total SSD cost assumption, middle-end SCM (write latency: 1us, read latency: 1us) is recommended in performance considering cost. However, for prxy_1 (read-hot workload) with high total SSD cost assumption, high-end SCM (write latency: 100ns, read latency: 100ns) achieves the best performance.

This paper analyzes the system-level performance of Storage Class Memory (SCM)/NAND flash hybrid solid-state drives (SSDs) and SCM/NAND flash/NAND flash tri-hybrid SSDs in difference types of NAND flash memory. There are several types of NAND flash memory, i.e. 2-dimensional (2D) or 3-dimensional (3D), charge-trap type (CT) and floating-gate type (FG) and multi-level cell (MLC) or triple-level cell (TLC). In this paper, the following four types of NAND flash memory are analyzed: 1) 3D CT TLC, 2) 3D FG TLC, 3) 2D FG TLC, and 4) 2D FG MLC NAND flash. Regardless of read- and write-intensive workloads, SCM/NAND flash hybrid SSD with low cost 3D CT TLC NAND flash achieves the best performance that is 20% higher than that with higher cost 2D FG MLC NAND flash. The performance improvement of 3D CT TLC NAND flash can be obtained by the short write latency. On the other hand, in case of tri-hybrid SSD, SCM/3D CT TLC/3D CT TLC NAND flash tri-hybrid SSD improves the performance 102% compared to SCM/2D FG MLC/3D CT TLC NAND flash tri-hybrid SSD. In addition, SCM/2D FG MLC/2D FG MLC NAND flash tri-hybrid SSD shows 49% lower performance than SCM/2D FG MLC/3D CT TLC NAND flash tri-hybrid SSD. Tri-hybrid SSD flash with 3D CT TLC NAND flash is the best performance in tri-hybrid SSD thanks to larger block size and word-line (WL) write. Therefore, in 3D CT TLC NAND flash based SSDs, higher cost MLC NAND flash is not necessary for hybrid SSD and tri-hybrid SSD for data center applications.

In this letter, we propose a static wear leveling technique, called Recency-based Wear Leveling (RbWL). The basic idea of RbWL is to execute static wear leveling at minimum levels, because the frequent migrations of cold data by static wear leveling cause significant overhead in a NAND flash memory system. RbWL adjusts the execution frequency according to a threshold value that reflects the lifetime difference of the hot/cold blocks and the total lifetime of the NAND flash memory system. The evaluation results show that RbWL improves the lifetime of NAND flash memory systems by 52%, and it also reduces the overhead of wear leveling from 8% to 42% and from 13% to 51%, in terms of the number of erase operations and the number of page migrations of valid pages, respectively, compared with other algorithms.

In terms of system reliability, data recovery is a crucial capability. The lack of data recovery leads to the permanent loss of valuable data. This paper aims at improving data recovery in flash-based storage devices where extremely poor data recovery is shown. For this, we focus on garbage collection that determines the life span of data which have high possibility of data recovery requests by users. A new garbage collection mechanism with awareness of data recovery is proposed. First, deleted or overwritten data are categorized into shallow invalid data and deep invalid data based on the possibility of data recovery requests. Second, the proposed mechanism selects victim area for reclamation of free space, considering the shallow invalid data that have the high possibility of data recovery requests. Our proposal prohibits more shallow invalid data from being eliminated during garbage collections. The experimental results show that our garbage collection mechanism can improve data recovery with minor performance degradation.

NAND flash memories used in solid-state drives (SSDs) will be replaced with storage-class memories (SCMs), which are comparable with NAND flash in their cost, and with DRAM in their speed. This paper describes the performance difference of the SCM/NAND flash hybrid SSD and the SCM-based SSD with between sector-unit read (512 Byte) and page-unit read (16 KByte, NAND flash page-size) using synthetic and real workload. Also, effect of the SCM read-unit size on SSD performance are analyzed. When SCM write/read latency is 0.1 us, performance difference of the SCM/NAND flash hybrid SSD with between page- and sector-unit read is about 1% and 6% at most for the write-intensive and read-intensive workloads, respectively. However, performance of the SCM-based SSD is significantly improved when sector-unit read is used because extra read latency does not occur. Especially, the SCM-based SSD IOPS is improved by 131% for proj_3 (read-hot-random), because its read request size is small but its read request ratio is large. This paper also shows IOPS of SCM-based SSD write/read with sector-unit read can be predicted by the average write/read request size of workloads.

In order to reduce the memory cell errors in real-usage of NAND flash-based SSD, real usage-based precise reliability test for NAND flash of SSDs has been proposed. Reliability of the NAND flash memories of the SSDs is seriously degraded as the scaling of memory cells. However, conventional simple reliability tests of read-disturb and data-retention cannot give the same result as the real-life VTH shift and memory cell errors. To solve this problem, the proposed reliability test precisely reproduces the real memory cell failures by emulating the complicated read, write, and data-retention with SSD emulator. In this paper, the real-life VTH shift and memory cell errors between two generations of NAND flash memory with different characterized real workloads are provided. Using the proposed test method, 1.6-times BER difference is observed when write-cold and read-hot workload (hm_1) and write-hot and read-hot workload (prxy_1) are compared in 1Ynm MLC NAND flash. In addition, by NAND flash memory scaling from 1Xnm to 1Ynm generations, the discrepancy of error numbers between the conventional reliability test result and actual reliability measured by proposed reliability test is increased by 6.3-times. Finally, guidelines for read reference voltage shifts and strength of ECCs are given to achieve high memory cell reliability for various workloads.

The use of flash memory based storage devices is rapidly increasing, and user demands for high performance are also constantly increasing. The performance of the flash storage device is greatly influenced by cleaning operations of Flash Translation Layer (FTL). Various studies have been conducted to lower the cost of cleaning operations. However, there are limits to achieve sufficient performance improvement of flash storages without help of a host system, with only limited information in storage devices. Recently, SCSI, eMMC, and UFS standards provide an interface for sending semantic information from a host system to a storage device. In this paper, we analyze effects of semantic information on performance and lifetime of flash storage devices. We evaluate performance and lifetime improvement through SA-FTL (Semantic Aware Flash Translation Layer), which can take advantage of semantic information in storage devices. Experiments show that SA-FTL improves performance and lifetime of flash based storages by up to 30 and 35%, respectively, compared to a simple page-level FTL.

In order to realize solid-state drives (SSDs) with high performance, low energy consumption and high reliability, storage class memory (SCM)/multi-level cell (MLC) NAND flash hybrid SSD has been proposed. Algorithm of the hybrid SSD should be designed according to SCM specifications and workload characteristics. In this paper, SCMs are used as non-volatile cache. Cache operation guidelines and optimal SCM specifications for the hybrid SSD are provided for various workload characteristics. Three kinds of non-volatile cache operation for the hybrid SSD are discussed: i) write cache, ii) read-write cache without space control (RW cache) and iii) read-write cache with space control (RW cache w/ SC). SSD workloads are categorized into eight according to read/write ratio, access frequency and access data size. From evaluation result, the write cache algorithm is suitable for write-intensive workloads and read-cold-sequential workloads, while the RW cache algorithm is suitable for read-cold-random workloads to achieve the highest performance of the hybrid SSD. In contrast, as for read-hot-random workloads, write cache is appropriate when the SCM capacity is less than 3% of the NAND flash capacity. On the other hand, RW cache should be used in case that SCM capacity is more than 5% of NAND flash capacity. The effect of Memory-type SCM (M-SCM) and Storage-type SCM (S-SCM) on the hybrid SSD performance is also analyzed. The M-SCM latency is below 1 us (high speed) but the capacity is only 2% of the NAND flash capacity (small capacity). On the other hand, the S-SCM capacity is assumed to be 5% of the NAND flash capacity (large capacity) but S-SCM speed is larger than 1 us (low speed). If the additional SCM cost is limited to 20% of MLC NAND flash cost, up to 7-times and 8-times performance improvement are achieved in write-hot-random workload and read-hot-random workloads, respectively. Moreover, if the additional SCM cost is the same as MLC NAND flash cost, M-SCM/MLC NAND flash hybrid SSD achieves 24-times performance improvement.

Rapid process scaling and the introduction of the multilevel cell (MLC) concept have lowered costs of NAND Flash memories, but also degraded reliability. For this reason, the memories are depending on strong error correcting codes (ECCs), and this has enabled the memories to be used in wide range of storage applications, including solid-state drives (SSDs). Meanwhile, too strong error correcting capability requires excessive decoding complexity and check bits. In NAND Flash memories, cell errors to neighborhood voltage levels are more probable than those to distant levels. Several ECCs reflecting this characteristics, including limited-magnitude ECCs which correct only errors with a certain limited magnitude and low-density parity check (LDPC) codes, have been proposed. However, as most of these ECCs need the multiple bits in a cell for encoding, they cannot be used with multipage programing, a high speed programming method currently employed in the memories. Also, binary ECCs with Gray codes are no longer optimal when multilevel voltage shifts (MVSs) occur. In this paper, an error correction method reflecting the error characteristic is presented. This method detects errors by a binary ECC as a conventional manner, but a nonbinary value or whole the bits in a cell, are subjected to error correction, so as to be corrected into the most probable neighborhood value. The amount of bit error rate (BER) improvement is depending on the probability of the each error magnitude. In case of 2bit/cell, if only errors of magnitude 1 and 2 can occur and the latter occupies 5% of cell errors, acceptable BER is improved by 4%. This is corresponding to extending 2.4% of endurance. This method needs about 15% longer average latency, 19% longer maximum latency, and 15% lower throughput. However, with using the conventional method until the memories' lifetime number of program/erase cycling, and the proposed method after that, BER improvement can be utilized for extending endurance without latency and throughput degradation until the switch of the methods.

The write operations on emerging Non-Volatile Memory (NVM), such as NAND Flash and Phase Change Memory (PCM), usually incur high access latency, and are required to be optimized. In this paper, we propose Asymmetric Read-Write (ARW) policies to minimize the write traffic sent to NVM. ARW policies exploit the asymmetry costs of read and write operations, and make adjustments on the insertion policy and hit-promotion policy of the replacement algorithm. ARW can reduce the write traffic to NVM by preventing dirty data blocks from frequent evictions. We evaluate ARW policies on systems with PCM as main memory and NAND Flash as disk. Simulation results on an 8-core multicore show that ARW adopted on the last-level cache (LLC) can reduce write traffic by more than 15% on average compared to LRU baseline. When used on both LLC and DRAM cache, ARW policies achieve an impressive reduction of 40% in write traffic without system performance degradation. When employed on the on-disk buffer of the Solid State Drive (SSD), ARW demonstrates significant reductions in both write traffic and overall access latency. Moreover, ARW policies are lightweight, easy to implement, and incur negligible storage and runtime overhead.

NAND flash memory has been widely used in storage systems. Aiming to design an efficient buffer policy for NAND flash memory, a life-aware buffer management algorithm named LAB-LRU is proposed, which manages the buffer by three LRU lists. A life value is defined for every page and the active pages with higher life value can stay longer in the buffer. The definition of life value considers the effect of access frequency, recency and the cost of flash read and write operations. A series of trace-driven simulations are carried out and the experimental results show that the proposed LAB-LRU algorithm outperforms the previous best-known algorithms significantly in terms of the buffer hit ratio, the numbers of flash write and read operations and overall runtime.

In this letter, we propose a novel garbage collection technique for index structures based on flash memory systems, called Proxy Block-based Garbage Collection (PBGC). Many index structures have been proposed for flash memory systems. They exploit buffers and logs to resolve the update propagation problem, one of the a main cause of performance degradation of the index structures. However, these studies overlooked the fact that not only the record operation but also garbage collection induces the update propagation problem. The proposal, PBGC, exploits a proxy block and a block mapping table to solve the update propagation problem, which is caused by the changes in the page and block caused by garbage collection. Experiments show that PBGC decreased the execution time of garbage collection by up to 39%, compared with previous garbage collection techniques.

In this letter, we propose a novel wear leveling technique we call Hidden cold block-aware Wear Leveling (HaWL) using a bit-set threshold. HaWL prolongs the lifetime of flash memory devices by using a bit array table in wear leveling. The bit array table saves the histories of block erasures for a period and distinguishes cold blocks from all blocks. In addition, HaWL can reduce the size of the bit array table by using a one-to-many mode, where one bit is related to many blocks. Moreover, to prevent degradation of wear leveling in the one-to-many mode, HaWL uses bit-set threshold (BST) and increases the accuracy of the cold block information. The performance results illustrate that HaWL prolongs the lifetime of flash memory by up to 48% compared with previous wear leveling techniques in our experiments.

Storage-Class Memory (SCM) and NAND flash hybrid Solid-State Drive (SSD) has advantages of high performance and low power consumption compared with NAND flash only SSD. In this paper, first, three SSD configurations are investigated. Three different SCMs are used with 0.1 µs, 1 µs and 10 µs read/write latencies, respectively, and the required SCM/NAND flash capacity ratios are analyzed to maintain the same SSD performance. Next, by using the three SSD configurations, the variation of SSD reliability, performance and cost are analyzed by changing error correction strengths. The SSD reliability of acceptable SCM and NAND flash Bit Error Rates (BERs) is limited by achieving specified SSD performance with error correction, and/or limited by SCM and NAND flash parity size and SSD cost. Lastly, the SSD replacement cost is also analyzed by considering the limitation of NAND flash write/erase cycles. The purpose of this paper is to provide a design guideline for obtaining high performance, highly reliable and cost-effective SCM/NAND hybrid structure SSD with ECC.

This paper presents a novel low-power decoder architecture for the (36420, 32778) binary LDPC code targeting energy-efficient NAND-flash-based mobile devices. The proposed energy-scalable decoding algorithm reduces the operating bit-width of decoding function units at the early-use stage where the channel condition is good enough to lower the precision of computation. Based on a flexible adder structure, the decoding energy of the proposed LDPC decoder can be reduced by freezing the unnecessary parts of hardware resources. A prototype 4KB LDPC decoder is designed in a 65nm CMOS technology, which achieves an average decoding throughput of 8.13Gb/s with 1.2M equivalent gates. The power consumption of the decoder ranges from 397mW to 563mW depending on operating conditions.

A design strategy (the required ECC strength and the judgment method of the dominant error mode) of error-prediction low-density parity-check (EP-LDPC) error-correcting code (ECC) and error-recovery schemes for scaled NAND flash memories is discussed in this paper. The reliability characteristics of NAND flash memories are investigated with 1X, 2X and 3Xnm NAND flash memories. Moreover, the system-level reliability of SSDs is analyzed from the acceptable data-retention time of the SSD. The reliability of the NAND flash memory is continuously degrading as the design rule shrinks due to various problems. As a result, future SSDs will not be able to maintain system-level reliability unless advanced ECCs with signal processing are adopted. Therefore, EP-LDPC and error-recovery (ER) schemes are previously proposed to improve the reliability. The reliability characteristics such as the bit-error rate (BER) versus the data-retention time and the effect of the cell-to-cell interference on the BER are measured. These reliability characteristics obtained in this paper are stored in an SSD as a reliability table, which plays a principal role in EP-LDPC scheme. The effectiveness of the EP-LDPC scheme with the scaling of the NAND flash memory is also discussed by analyzing the cell-to-cell interference. An interference factor $alpha$ is proposed to discuss the impact of the cell-to-cell coupling. As a result, the EP-LDPC scheme is assumed to be effective down to 1Xnm NAND flash memory. On the other hand, the ER scheme applies different voltage pulses to memory cells, according to the dominant error mode: program-disturb or data-retention error dominant mode. This paper examines when the error mode changes, corresponding to which pulse should be applied. Additionally, the estimation methods of the dominant error mode by ER scheme are also discussed. Finally, as a result of the system-level reliability analysis, it is concluded that the use of the EP-LDPC scheme can maintain the reliability of the NAND flash memory in 1Xnm technology node.

NAND flash storage devices, such as eMMCs and microSD cards, are now widely used in mobile devices. In this paper, we propose a novel buffer replacement scheme for mobile NAND flash storages. It efficiently improves write performance by evicting pages flash-friendly and maintains high cache hit ratios by managing pages in order of recency. Our experimental results show that the proposed scheme outperforms the best performing scheme in the recent literature, Sp.Clock, by 48%.