Modeling and numerical simulation of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations a new concept called micro-absorber was introduced for obtaining defect-free Si films.

In order to realize flexible interaction control between user and information processing system, a special purpose user model is proposed on the basis of the knowledge-based design method of user interface system. The user-specific control knowledge of user-oriented interface environment is represented explicitly in the user model and utilized in the user-oriented interface system. Furthermore, the framework of user-oriented interface environment based on this user model called user-model-driven interface system, is proposed as one of user-adaptive human interface systems, in this paper. According to the proposed framework, a prototype system of the user-model-driven interface system is implemented and the facility of user-specific interaction control based on the user model has been verified with respect to an electronic mail handling task.

The new notion of "multiuser interface", an interface for groups working together in a shared workspace, originated from the expansion of CSCW research and the spread of the groupware concept. This paper introduces a new multiuser interface design approach based on the translucent video overlay technique. This approach was realized in the multimedia desktop conference system Team WorkStation. Team WorkStation demonstrates that this translucent video overlay technique can achieve two different goals: (1) fused overlay for realizing the open shared workspace, and (2) selective overlay for effectively using limited screen space. This paper first describes the concept of open shared workspace and its implementation based on the fused overlay technique. The shared work window of Team-WorkStation is created by overlaying translucent individual workspace images. Each video layer is originally physically separated. However, because of the spatial relationships among marks on each layer, the set of overlaid layers provides users with sufficient semantics to fuse them into one image. The usefulness of this cognitive fusion was demonstrated through actual usage in design sessions. Second, the problem of screen space limitation is described. To solve this problem, the idea of ClearFace based on selective overlay is introduced. The ClearFace idea is to lay translucent live face video windows over a shared work window. Through the informal observations of experimental use in design sessions, little difficulty was experienced in switching the focus of attention between the face images and the drawing objects. The theory of selective looking accounts for this flexible perception mechanism. Although users can see drawn objects behind a face without difficulty, we found that users hesitate to draw figures or write text over face images. Because of this behavior, we devised the "movable" face window strategy.

In this paper we review the recent progress and basic technology of vertical cavity surface emitting lasers together with related parallel surface operating optical devices. First, the concept of surface emitting lasers is presented, and then currently developed device technologies will be reviewed. We will feature several technical issues, such as multi-layer structures, 2-dimensional arrays, photonic integration, etc. Lastly, future prospects for parallel lightwave systems will be discussed.

In this paper we review the recent progress and basic technology of vertical cavity surface emitting lasers together with related parallel surface operating optical devices. First, the concept of surface emitting lasers is presented, and then currently developed device technologies will be reviewed. We will feature several technical issues, such as multi-layer structures, 2-dimensional arrays, photonic integration, etc. Lastly, future prospects for parallel lightwave systems will be discussed.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23cm-1, a differential gain coefficient of 1.9cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.

The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm-1, a differential gain coefficient of 1.9 cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs.