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Youngsun SONG Ki-Tae PARK Myounggon KANG Yunheub SONG Sungsoo LEE Youngho LIM Kang-Deog SUH
A boosted bit line program scheme is proposed for low operating voltage in the multi-level-cell (MLC) NAND flash memory. Our BL to BL boosting scheme, which uses the BL coupling capacitance, is applied to achieve a higher channel potential than is possible with Vcc, so that the Vpass window margin is improved by up to 59% in 40 nm MLC NAND flash memory with 2.7 V Vcc. In the case of 1.8 V Vcc, the margin of the proposed scheme is 12% higher than one of the conventional schemes at 2.7 V Vcc.
Yoshiyuki HARAGUCHI Toshihiko HIROSE Motomu UKITA Tomohisa WADA Masanao EINO Minoru SAITO Michihiro YAMADA Akihiko YASUOKA
This paper describes a new hierarchical bit line organization utilizing a T-shaped bit line(H-BLT) and its practical implementation in a 4-Mb SRAM using a 0.4µm CMOS process. The H-BLT has reduced the number of I/O circuits for multiplexers, sense amplifiers and write drivers, resulting in an efficient multiple blockdivision of the memory cell array. The size of the SRAM die was reduced by 14% without an access penalty. The active current is 30mA at 5 V and 10 MHz. The typical address access time is 35 ns with a 4.5 V supply voltage and a 30 pF load capacitance. The operating voltage range is 2.5 V to 6.0 V. H-BLT is a bright and useful architecture for the high density SRAMs of the future.
Hiromi NOBUKATA Kenichi SATORI Shinji HIRAMATSU Hideki ARAKAWA
An experimental 3 V-only 4 Mb NAND Flash memory with 65 ns access time has been developed using a new charge pump circuit and novel circuit techniques such as folded bit-line architecture. By adopting a new program verify technique, programming time is reduced to 11 µs/Byte.