We propose a new band selective stop filter construction to decrease the out of band intermodulation distortion (IMD) noise generated in the transmitting power amplifier. Suppression of IMD noise directly improves the adjacent channel leakage power ratio (ACLR). A high-temperature superconducting (HTS) device with extremely high-Q performance with very small hybrid IC pattern would make it possible to implement the proposed filter construction as a practical device. To confirm the effectiveness of the HTS reaction-type filter (HTS-RTF) in improving ACLR, investigations based on both experiments and numerical analyses are carried out. The structure of a 5-GHz split open-ring resonator is investigated; its targets include high-unload Q-factor, low current densities, and low radiation. A designed 5-GHz HTS-RTF with 4 MHz suppression bandwidth and more than 40 dB MHz-1 sharp skirt is fabricated and experimentally investigated. The measured ACLR values are improved by a maximum of 12.8 dB and are constant up to the passband signal power of 40 dBm. In addition, to examine the power efficiency improvement offered by noise suppression of the HTS-RTF, numerical analyses based on measured results of gallium nitride HEMT power amplifier characteristics are conducted. The analyzed results shows the drain efficiency of the amplifier can be improved to 44.2% of the amplifier with the filter from the 15.7% of the without filter.

In this paper we mainly focus on the effect of a ferromagnetic material on the critical current of Bi-2223 tape. The magnetic field distributions of tapes with several different layouts of a ferromagnetic material are investigated by calculation and the corresponding critical current is tested experimentally. The analysis indicates that the critical current of the tape can be improved effectively by laying the ferromagnetic material perpendicularly next to the tape edge. Furthermore, various other ferromagnetic parameters are also important for reducing the magnetic field induced by the current flowing through the tape.

We have developed the fabrication process, the circuit design technology, and the cryopackaging technology for high-Tc single flux quantum (SFQ) devices with the aim of application to an analog-to-digital (A/D) converter circuit for future wireless communication and a sampler system for high-speed measurements. Reproducibility of fabricating ramp-edge Josephson junctions with IcRn products above 1 mV at 40 K and small Ic spreads on a superconducting groundplane was much improved by employing smooth multilayer structures and optimizing the junction fabrication process. The separated base-electrode layout (SBL) method that suppresses the Jc spread for interface-modified junctions in circuits was developed. This method enabled low-frequency logic operations of various elementary SFQ circuits with relatively wide bias current margins and operation of a toggle-flip-flop (T-FF) above 200 GHz at 40 K. Operation of a 1:2 demultiplexer, one of main elements of a hybrid-type Σ-Δ A/D converter circuit, was also demonstrated. We developed a sampler system in which a sampler circuit with a potential bandwidth over 100 GHz was cooled by a compact stirling cooler, and waveform observation experiments confirmed the actual system bandwidth well over 50 GHz.

Single flux quantum (SFQ) circuit elements have been designed and fabricated using the YBa2Cu3O7-δ ramp-edge junction technology. Logic operations of SFQ circuit elements, such as a toggle flip-flop (T-FF), a set-reset flip-flop (RS-FF), and a 96-junction Josephson transmission line (JTL), were successfully demonstrated, and dc supply current margins were confirmed up to temperatures higher than 30 K. The circuit layout was improved in order to suppress the critical current (Ic) spread that appears during the junction fabrication procedure. By employing the new circuit layout rule, correct operations at temperatures from 27 K to 34 K with dc supply current margins wider than 7% were confirmed for the T-FF with a single output. Moreover, the maximum operating frequencies of T-FFs were measured to be 360 GHz at 4.2 K and 210 GHz at 41 K, which are substantially higher than the values for the circuits with the conventional layout. According to the simulation result, the maximum operating frequency at 40 K was expected to be approximately 50% of the characteristic frequency at a bit error rate (BER) less than 10-6.

Two types of miniaturized high-temperature superconducting filters are described in this paper. The first type is developed by using small-sized microstrip spiral resonators, and the second type by coplanar waveguide quarter-wavelength resonators. The filters have significantly reduced size compared with many previous HTS filters. They are designed by employing an electromagnetic simulator in combination with appropriately chosen equivalent circuits. Their measured frequency responses agree well with theoretical predictions, and show low insertion losses in spite of their small sizes.

We have fabricated a multilayer structure for single flux quantum (SFQ) circuit application using a high-temperature superconductor (HTS). La0.2-Y0.9Ba1.9Cu3Ox (La-YBCO) base electrode layers were prepared by a dc or rf magnetron sputtering method. The reproducibility of film quality for dc-sputtered La-YBCO films was better than that for rf-sputtered films, and the dc sputtered films exhibited the average surface roughness Ra less than 1.0 nm and a Tc zero value of 88 K. By using the dc-sputtered La-YBCO films, a multilayer structure of SrSnO3/La-YBCO/SrSnO3/La-YBCO on MgO substrate with Ra below 2.0 nm was obtained. Interface-modified ramp-edge junctions with La0.2-Yb0.9Ba1.9Cu3Ox (La-YbBCO) counter electrodes have been fabricated by using this multilayer structure with dc-sputtered films. The fabricated junctions exhibited RSJ-type I-V characteristics with IcRn products of about 3 mV at 4.2 K. We also obtained a 1-σ Ic spread of 8% for a 1000-junction series-array. The sheet inductance values at 4.2 K for the base and counter electrodes on La-YBCO ground planes were 0.8 pH and 0.7 pH per square, respectively. Operation of several types of elementary SFQ circuits has been successfully demonstrated by using this multilayer structure.

A high temperature superconductor (HTS) filter is designed and measured at 1.93 GHz, using microstrip half-wavelength spiral resonators. Resonant and coupling characteristics of miniaturized microstrip spiral resonators are investigated first. Then a 4-pole Chebyshev bandpass filter with a very narrow passband (4.1 MHz) is designed and realized using microstrip spiral resonators. The filter is fabricated using HTS YBCO films deposited on a LaAlO3 substrate. The measured frequency response of the filter agrees reasonably with the specifications, and shows that the filter owns excellent property of spurious resonance rejection over a wide frequency range.

At frequencies currently used by mobile communications, many of the microstrip half-wavelength resonators are too large to realize miniaturized filters. For this reason, very small-sized microstrip spiral resonators and filters, using high-temperature superconductors (HTS), have been studied recently. In this paper, the resonant and coupling characteristics of microstrip G-type and S-type spiral resonators are investigated first by using an electromagnetic simulator. Then small-sized 4-pole, 8-pole, and 16-pole Chebyshev bandpass filters using S-type spirals are designed, respectively, with a midband frequency f0 = 1.93 GHz. The frequency responses of the filters satisfy well the desired specifications, and the measured frequency response of the 8-pole HTS filter agrees well with the theoretical prediction.

The present state of IEC and JIS standards is reviewed on measurement methods of low-loss dielectric and high-tempera-ture superconductor (HTS) materials in the microwave and millimeter wave range. Four resonance methods are discussed actually, that is, a two-dielectric resonator method for dielectric rod measurements, a two-sapphire resonator method for HTS film measurements, a cavity resonator method for microwave measurements of dielectric plates and a cutoff circular waveguide method for millimeter wave measurements of dielectric plates. These methods realize the high accuracy sufficient for measurements of temperature dependence of material properties.

An important barrier to the application of high-temperature superconducting microwave filters is their power-handling capability. To clarify the key parameters for improving the power-handling capability of rf filters based on high-temperature superconductors with microstrip structures, we synthesize bandpass filters with different layouts using several kinds of thin film high-temperature superconductors, and subject them to third-order intermodulation measurements. By improving the sensitivity of the measurement set-up through the selective reduction of the fundamental output signals, we succeed in measuring the intermodulation signals of the superconducting filters. The experimental results indicate that increasing the film thickness and utilizing MBE-grown films of NdBa2Cu3O7 films are effective in obtaining high-power handling microstrip filters.

A compact high-temperature superconducting (HTS) bandpass filter (BPF) using coplanar waveguide (CPW) meander-line parallel-circuited resonators is proposed for microwave receiver applications. The design theory is presented based on a conventional filter theory with J-inverters. Also, analytical and numerical studies of the meander-line resonator are carried out in terms of equivalent circuit values, the resonant frequency, and the unloaded Q. Two- and four-stage 0.05 dB ripple Chebyshev BPFs at 2 GHz with relative bandwidth 60 MHz are fabricated with the metalorganic deposition (MOD)-derived YBCO films on LaAlO3 substrates and their performance are demonstrated. The measured frequency characteristics and the unloaded quality factors agree well with the theoretical and numerical results and the validity of the design theory is confirmed.

A 5-pole lumped element bandpass filter (BPF) of center frequency 264.05 MHz and fractional bandwidth (FBW) 0.76% is designed and fabricated using YBa2Cu3O7-d (YBCO) thin films deposited on both sides of a MgO substrate(40 mm 40 mm 0.5 mm). The return loss, minimum insertion loss and ripple were measured to be 20.0 dB, less than 0.1 dB and less than 0.1 dB at 70 K, respectively. These results verify both the compactness and low loss characteristics in the VHF band. The simulated frequency response, where the frequency dependences of inductance (L) and capacitance (C) elements and housing effect are taken into account, is in good agreement with the measured frequency response.

Recent progress of high-temperature superconductor Josephson junction technology is reviewed in the light of the future application to digital circuits. Among various types of Josephson junctions so far developed, ramp-edge-type junctions with a barrier layer composed of oxide materials in the vicinity of metal-insulator transition seem to offer a unique opportunity to fulfill all the requirements for digital circuit applications by virtue of their small junction dimensions, overdamped properties and relatively high IcRn product values at the temperature of around 30-40 K. Recently developed interface engineered junctions can be classified as junctions of this type. These junctions also raise an interesting problem in physics concerning the possibility of resonant tunneling of Cooper pairs via localized states in the barrier. From the viewpoint of practical applications, the improvement of the spread of the junction parameters is still a serious challenge to the present fabrication technology. Although interface engineered junctions seem to be most promising in this regard at present, 1σ spread of around 8% in the present fabrication technology is far from satisfactory for the fabrication of large-scale integrated circuits. The detailed understanding of the barrier formation mechanism in the interface engineered junction is indispensable not only for advancing this particular fabrication technology but also for improving other junction technology utilizing ramp-edge structures.

High-temperature superconductor (HTS) receiving filter subsystem for mobile telecommunication base station has been developed. An 11-pole HTS filter using YBa2Cu3O7-δ (YBCO) thin films and a low noise amplifier were cooled to 70 K by a small cryocooler. Total noise figure of this subsystem was measured to be 0.5 dB. Furthermore the effect of using the subsystem in the receiver front-end of Code Division Multiple Access (CDMA) cellular base station was investigated. The transmitting power reduction of handy terminal was estimated to be about 35%.

Large-area high-temperature superconducting films and damage-free processing techniques have been developed to fabricate low insertion loss and sharp skirt filters for mobile telecommunication. An off-axis-type dc sputtering method was employed to deposit Y-Ba-Cu-O films on both sides of the substrate. The surface resistance of the films was about 0. 35 mΩ(at 70 K and 10 GHz). An 11-pole bandpass receiving filter for the IS-95 telecommunication system was designed and fabricated using 60 mm 50 mm YBCO films on a 0. 5-mm-thick MgO substrate. The passband insertion loss at 70 K was about 0. 1 dB with 0. 1 dB ripple. The third-order intercept point of the filter was 49. 5 dBm. We have assembled the filter and a low-noise amplifier in a dewar with a cryocooler. Ultralow-noise performance (noise figure: 0. 5 dB at 70 K) was presented by the cryogenic filter subsystem.

We have studied the performances of several types of vortex flow transistors including prototype flux flow transistors (FFTs), nanobridge vortex flow transistors (NBVFTs) based on a parallel array of nanobridges, planar Josephson vortex flow transistors (planar JVFTs) based on a parallel array of grain boundary Josephson junctions, and JVFTs with a stacked structure (stacked JVFTs). The NBVFTs had considerably higher magnetic field sensitivity and shorter response time than the FFTs. A flux-to-voltage transfer function V/φ of 2.6 m V/φo and a modulation depth of 0.5 mV were obtained for the NBVFT composed of 2 nanobridges, while the current gain was small. The temperature dependence of the device parameters (the dynamic resistance and the inductance) suggests that the surface barrier to the Abrikosov vortex entry into the nanobridge strongly contributes to the relatively large V/φ values. The response time of the nanobridge is estimated to be 5 ps. On the other hand, the JVFTs showed large current gains because of the small kinetic inductance of the Josephson junction. The planar JVFT composed of 3 Josephson junctions with an asymmetrical geometry showed a current gain of 2.2 at 4.2 K. Also, the stacked JVFT showed the current gain of 2.0, while the maximum value of V/φ was 210 µV/φo. The mutual inductance between the control line and the superconducting loop within the transistor was enhanced in the stacked JVFT. This enhancement may yield a short response time compared to that of the planar JVFT. When we apply these vortex flow transistors, we should take account of the properties peculiar to each transistor.