Efficient silicon-based light sources are expected to be key devices for applications such as optical interconnection. Huge number of researches has been conducted for realizing silicon-based light sources. Most of them utilized silicon-related materials such as silicon nanostructures or germanium, not crystalline silicon, which has been considered as a poor light emitter because of its indirect electronic bandgap. Light emission properties of materials can be tailored not only by modifying the material properties directly, but also by controlling the electromagnetic environment surrounding the material. Photonic nanostructures are a powerful tool for creating the engineered environment. In this paper, we briefly review the mechanisms for improving the light emission properties of materials by photonic nanostructures and present our recent experimental results showing the enhancement of light emission from silicon by introducing photonic crystal structures.

We obtained blue photoluminescence from tantalum oxide films deposited by radio-frequency magnetron sputtering after annealing. The maximum peak intensity of the photoluminescence was observed from a sample annealed at 600 for 20 min, and the peak wavelength was approximately 430 nm. Tantalum oxide films that emit blue light may be useful materials for novel active optical devices utilizing Ta2O5/SiO2 multilayered photonic crystals.

A new bipolar scan waveform is proposed to increase the light emission duty factor by achieving the fast address in AC plasma display panel (AC-PDP). The new bipolar scan waveform consists of two-step scan pulse, which can separate the address discharge mode into two different discharge modes: a space charge generation mode and a wall charge accumulation mode. By adopting the new bipolar scan waveform, the light emission duty factor is increased considerably under the single scan ADS driving scheme due to the reduction of address time per single subfield.

We report on the formation technique and the first observation of visible light emission from silicon nanoparticles (<10nm) embedded in CaF22 Iayers grown on Si(111) substrates by using codeposition of Si and CaF2. It is shown that the size and density of silicon particles embedded in the CaF2 layer can be controlled by varying the substrate temperature and the evaporation rates of CaF2 and Si. The photoluminescence (PL) spectra of Si nanoparticles embedded in CaF2 thin films were investigated. The blue or green light emissions obtained using a He-Cd laser (λ=325nm) could be seen with the naked eye even at room temperature for the first time. It is shown that the PL intensity strongly depends on growth conditions such as the Si:CaF2 flux ratio and the growth temperature. The PL spectra were also changed by in situ annealing process. These phenomena can be explained qualitatively by the quantum size effect of Si nanoparticles embedded in CaF2 barriers.

Microcrystalline silicon embedded in silicon oxide has been prepared by means of a wet oxidation of porous silicon (PS) anodically produced from degenerate Si wafers in a HF solution. As the oxidation proceeded, optical absorptions of the PS specimen in the visible light region shifted obviously to the higher energy side. Visible light emission from the oxidized specimen was observed at room temperature with photoexcitation by a He-Cd laser while the as-prepared specimen emitted no visible lights. These results are discussed in relation to the quantum size effect of the microcrystalline silicon confined in the oxide matrix as well as visible emissions from as-prepared specimens produced from non-degenerate Si wafers.