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[Keyword] threshold detector(4hit)

1-4hit
  • Improved Double Threshold Detector for Spatially Distributed Target

    Teng LONG  Le ZHENG  Yang LI  Xiaopeng YANG  

     
    LETTER-Sensing

      Vol:
    E95-B No:4
      Page(s):
    1475-1478

    The double threshold detecting strategy is widely used for spatially distributed target detection in practical systems. However, the detector is limited in terms of robustness and effectiveness. In this paper, an improved double threshold detector is proposed that avoids these shortcomings. In the proposed detector, the energy in range cells that exceed the first threshold is accumulated and then the output of the accumulator is compared with the second threshold for detection. The threshold selection strategy is derived to guarantee the constant false-alarm rate (CFAR) property. A simulation shows that the proposed detector is superior to the conventional approach in terms of both robustness and effectiveness.

  • Neuron-MOS Current Mirror Circuit and Its Application to Multi-Valued Logic

    Jing SHEN  Koichi TANNO  Okihiko ISHIZUKA  Zheng TANG  

     
    PAPER-Circuits

      Vol:
    E82-D No:5
      Page(s):
    940-948

    A neuron-MOS transistor (νMOS) is applied to current-mode multi-valued logic (MVL) circuits. First, a novel low-voltage and low-power νMOS current mirror is presented. Then, a threshold detector and a quaternary T-gate using the proposed νMOS current mirrors are proposed. The minimum output voltage of the νMOS current mirror is decreased by VT (threshold voltage), compared with the conventional double cascode current mirror. The νMOS threshold detector is built on a νMOS current comparator originally composed of νMOS current mirrors. It has a high output swing and sharp transfer characteristics. The gradient of the proposed comparator output in the transfer region can be increased 6.3-fold compared with that in the conventional comparator. Along with improved operation of the novel current comparator, the discriminative ability of the proposed νMOS threshold detector is also increased. The performances of the proposed circuits are validated by HSPICE with Motorola 1.5 µm CMOS device parameters. Furthermore, the operation of a νMOS current mirror is also confirmed through experiments on test chips fabricated by VDEC*. The active area of the proposed νMOS current mirror is 63 µm 51 µm.

  • Design and Implementation of a Low-Power Multiple-Valued Current-Mode Integrated Circuit with Current-Source Control

    Takahiro HANYU  Satoshi KAZAMA  Michitaka KAMEYAMA  

     
    PAPER-Multiple-Valued Architectures

      Vol:
    E80-C No:7
      Page(s):
    941-947

    A new multiple-valued current-mode (MVCM) integrated circuit using a switched current-source control technique is proposed for a 1.5 V-supply high-speed arithmetic circuit with low-power dissipation. The use of a differential logic circuit (DLC) with a pair of dual-rail inputs makes the input voltage swing small, which results in a high driving capability at a lower supply voltage, while having large static power dissipation. In the proposed DLC using a switched current control technique, the static power dissipation can be greatly reduced because current sources in non-active circuit blocks are turned off. Since the gate of each current source is directly controlled by using a multiphase clock whose technique has been already used in dynamic circuit design, no additional transistors are required for currentsource control. As a typical example of arithmetic circuits, a new 1.5 V-supply 5454-bit multiplier based on a 0.8µm standard CMOS technology is also designed. Its performance is about 1.3 times faster than that of a binary fastest multiplier under the normalized power dissipation. A prototype chip is also fabricated to confirm the basic operation of the proposed MVCM integrated circuit.

  • Current-Mode CMOS-Based Decoder with Redundantly Represented O Addend Method for Multiple-Radix Signed-Digit Number

    Toru TABATA  Fumio UENO  

     
    PAPER

      Vol:
    E80-A No:6
      Page(s):
    1002-1008

    We discuss a new decoder for the multiple-valued signed-digit number, using a current-mode CMOS transistor-oriented circuit structure. In this paper, a new decoding method with the selective summation of a redundantly represented addend "O = [-1 r]" is proposed, where r is the radix and the addend is applied to each digit with a negative value and any consecutively higher digit takes which has a value of O. A newly designed literal linear circuit is realized, which has a current-switch function that makes independently the short path when each digit has a value of O. Through the parallel connections of these current swiches, the same addend signal at the lower digit is transmitted in a higher speed, The decoder circuit is tested by using the general circuit simulation software SPICE and the circuit characteristics of the selective summation of a redundantly represented O addend and the output results of the SD decoding operation were simulated. We also evaluated the decoder circuit in terms of the processing speed and the circuit size.