IEICE TRANSACTIONS on Electronics
Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process
Summary :
Even though BiCMOS process has an ability to make both BJT and MOSFET on single-chip, only BJT has been used for BiCMOS Si-MMIC LNA because of its low noise and high gain performance under low d. c. supply power. But the distortion performance of BJT should be improved for the receiver applications in some wireless systems. In this paper, intermodulation distortion characteristics comparison is carried out between BJT and MOSFET fabricated in the same BiCMOS process by the analysis based on the simplified transistor models with extracted device parameters. The analytical result shows that MOSFET has lower intermodulation distortion characteristics compared with BJT, and the result is evaluated by the measurements. In order to obtain both low distortion and low noise characteristics, a two-stage Si-MMIC LNA is developed by using BJT as the 1st stage and MOSFET as the 2nd stage of LNA. The fabricated LNA performs NF of 2.45 dB, gain of 19.3 dB, IIP3 of
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.5 pp.692-698
- Publication Date
- 1999/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- Category
Authors
Noriharu SUEMATSU
Masayoshi ONO
Shunji KUBO
Mikio UESUGI
Kouichi HASEGAWA
Kenji HIROSHIGE
Yoshitada IYAMA
Tadashi TAKAGI
Osami ISHIDA
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Noriharu SUEMATSU, Masayoshi ONO, Shunji KUBO, Mikio UESUGI, Kouichi HASEGAWA, Kenji HIROSHIGE, Yoshitada IYAMA, Tadashi TAKAGI, Osami ISHIDA, "Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 5, pp. 692-698, May 1999, doi: .
Abstract: Even though BiCMOS process has an ability to make both BJT and MOSFET on single-chip, only BJT has been used for BiCMOS Si-MMIC LNA because of its low noise and high gain performance under low d. c. supply power. But the distortion performance of BJT should be improved for the receiver applications in some wireless systems. In this paper, intermodulation distortion characteristics comparison is carried out between BJT and MOSFET fabricated in the same BiCMOS process by the analysis based on the simplified transistor models with extracted device parameters. The analytical result shows that MOSFET has lower intermodulation distortion characteristics compared with BJT, and the result is evaluated by the measurements. In order to obtain both low distortion and low noise characteristics, a two-stage Si-MMIC LNA is developed by using BJT as the 1st stage and MOSFET as the 2nd stage of LNA. The fabricated LNA performs NF of 2.45 dB, gain of 19.3 dB, IIP3 of
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_692/_p
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@ARTICLE{e82-c_5_692,
author={Noriharu SUEMATSU, Masayoshi ONO, Shunji KUBO, Mikio UESUGI, Kouichi HASEGAWA, Kenji HIROSHIGE, Yoshitada IYAMA, Tadashi TAKAGI, Osami ISHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process},
year={1999},
volume={E82-C},
number={5},
pages={692-698},
abstract={Even though BiCMOS process has an ability to make both BJT and MOSFET on single-chip, only BJT has been used for BiCMOS Si-MMIC LNA because of its low noise and high gain performance under low d. c. supply power. But the distortion performance of BJT should be improved for the receiver applications in some wireless systems. In this paper, intermodulation distortion characteristics comparison is carried out between BJT and MOSFET fabricated in the same BiCMOS process by the analysis based on the simplified transistor models with extracted device parameters. The analytical result shows that MOSFET has lower intermodulation distortion characteristics compared with BJT, and the result is evaluated by the measurements. In order to obtain both low distortion and low noise characteristics, a two-stage Si-MMIC LNA is developed by using BJT as the 1st stage and MOSFET as the 2nd stage of LNA. The fabricated LNA performs NF of 2.45 dB, gain of 19.3 dB, IIP3 of
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 692
EP - 698
AU - Noriharu SUEMATSU
AU - Masayoshi ONO
AU - Shunji KUBO
AU - Mikio UESUGI
AU - Kouichi HASEGAWA
AU - Kenji HIROSHIGE
AU - Yoshitada IYAMA
AU - Tadashi TAKAGI
AU - Osami ISHIDA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - Even though BiCMOS process has an ability to make both BJT and MOSFET on single-chip, only BJT has been used for BiCMOS Si-MMIC LNA because of its low noise and high gain performance under low d. c. supply power. But the distortion performance of BJT should be improved for the receiver applications in some wireless systems. In this paper, intermodulation distortion characteristics comparison is carried out between BJT and MOSFET fabricated in the same BiCMOS process by the analysis based on the simplified transistor models with extracted device parameters. The analytical result shows that MOSFET has lower intermodulation distortion characteristics compared with BJT, and the result is evaluated by the measurements. In order to obtain both low distortion and low noise characteristics, a two-stage Si-MMIC LNA is developed by using BJT as the 1st stage and MOSFET as the 2nd stage of LNA. The fabricated LNA performs NF of 2.45 dB, gain of 19.3 dB, IIP3 of
ER -
English
