In a direct conversion receiver for mobile communication, it is important to reduce power dissipation. Because a low pass filter in a direct conversion receiver must suppress adjacent channel signals, a high order and high power dissipation is often required in the low pass filter. We propose a new phase compensation technique suitable for a low power transconductor used in a GmC filter as a low pass filter. The new phase compensation technique reduces 10% of power dissipation.

A fully differential direct conversion receiver IC for W-CDMA is presented. The receiver IC consists of an LNA, a quadrature demodulator, low-pass filters (LPFs), and variable gain amplifiers (VGAs). In order to suppress DC offset, which is the most important issue in a direct conversion system, an active harmonic mixer is applied to the quadrature demodulator. Furthermore, a receiving system, including the LNA and an RF filter, adopts a differential architecture to reduce local signal leakage, which generates DC offset. Performance of the entire receiving system was evaluated and DC offset in steady state was measured at only 40 mV. Moreover, DC offset variation at the LNA gain change, which has the largest affect on the receiving performance, was limited to 70 mV, which is less than -10 dB compared to desired signal strength. It was confirmed by computer simulation that the DC offset variation at the LNA gain change did not degrade bit error rate (BER) performance at all.

A direct conversion receiver for W-CDMA, which consumes extremely low power, is presented. The receiver consists of a low-noise amplifier (LNA) IC, a receiver IC and other passive components such as an RF-SAW (Surface Acoustic Wave) filter. The receiver IC includes a quadrature demodulator (QDEM) with a local oscillator (LO) divider, low-pass filters (LPFs) for channel selection, variable gain amplifiers (VGAs) with dynamic range of 80 dB, and a fractional-N synthesizer. The power consumption for the entire receiver chain was only 30.8 mA at supply voltage of 2.7 V.

A Gm-C filter using multiple-output transconductors suitable for reducing the chip area and power consumption is presented. The novel multiple-output transconductor is based on a translinear gain cell with a linearized input stage. Making good use of the linearized input stage, a simple common-mode feedback is also proposed for this multiple-output transconductor. Using the proposed technique, a 5th-order lowpass filter with two transmission zeros was designed and fabricated as a main part of a lowpass channel selection filter for UMTS receivers. A channel of the filter consumes 7 mA from a 2.7 V power supply and the integrated input-referred noise was 21 dBuV with 20 dB pass band gain. The proposed multiple-output technique saves roughly half the number of transconductors compared with the typical active ladder filter design. The proposed multiple-output transconductors achieve linearization and effective reduction while saving linearized input stages. They are suitable for a filter with small power consumption and small area.

A linear-in-dB gain-control amplifier for direct conversion systems employs linearized transconductors in a core amp, a dc offset canceler, and a gain control circuit. The offset compensation circuit achieves a constant corner frequency over a gain range of 14 to 76 dB by simultaneous tuning of the transconductors.

This paper presents a triple-band WCDMA direct conversion receiver (DCR) IC that needs a small number of off-chip components and control signals from digital baseband (DBB) IC. The DCR IC consists of 3 quadrature demodulators (QDEMs) with on-chip impedance matching circuit and an analog baseband block (ABB) that contains a low-pass filter (LPF) with fc automatic tuning circuit using no off-chip components and a linear-in-dB variable-gain amplifier (VGA) with on-chip analog high-pass filter (HPF). In order to make use of DBB control-free DC offset canceler, the DCR is designed to avoid large gain change under large interference that causes long transient response. In order to realize that characteristic without increasing quiescent current, the QDEM is used that employs class AB input stage and low-noise common mode feedback (CMFB) output stage. The DCR IC was fabricated in a SiGe BiCMOS process and occupies about 2.9 mm3.0 mm. The DCR needs SAW filters only for off-chip components and a gain control signal from DBB IC for AGC loop. The IIP3 of over -4.4 dBm for small signal input level and that of over +1.9 dBm for large signal input level are achieved. The gain compression of the desired signal is less than 0.3 dB for ACS Case-II condition.

A fast fc automatic tuning circuit suitable for WCDMA systems is proposed. The circuit employs master-slave architecture using digitally controlled Gm-C filter for avoiding long transient response. The tuning feedback loop contains a 2-bit up-down counter ADC for fast tuning operation. Furthermore, to avoid degradation of fc tuning accuracy due to reference feedthrough, an analog loop filter with notch located near reference frequency is used. The fast fc automatic tuning circuit is fabricated in a SiGe BiCMOS process. The tuning time within 200 µs is achieved for 35 chips from 2 lots and the standard deviation of 25.5 kHz is obtained for the average fc of 2.12 MHz.

A fully balanced (FB) transconductor using two multi-input single-ended (SE) CMOS transconductors is proposed, where the transconductors use MOS transitors operating in a triode region for achieving a wide linear input-range. SE circuits are easier to design than differential circuits and inherently reject common-mode (CM) signals. The multi-input structure is used to make a CM feedback loop and to determine an output CM voltage. A high-output-resistance current mirror is used in converting a differential signal to a single-ended signal in order to achieve a high common-mode rejection ratio (CMRR) and a high output-resistance of the transconductor. The FB transconductor achieves a 2-Vpp linear input range at a 2.5-V power supply and consumes 1.74 mA. The output resistance of the FB transconductor is 2 MΩ. It operates at 2 V with a linear input-range of 1.2 Vpp and at 1.6 V with a linear input-range of 0.9 Vpp. A 2.5-V 2.5-MHz FB Gm-C filter using the FB transconductors achieved a CMRR of 45 dB and a passband IIP3 of 32 dBm.