M-ary orthogonal keying (MOK) systems under carrier frequency offset (CFO) are investigated. It is shown that spurious signals are introduced by the offset frequency components of spectrum after multiplication in correlation detection process, and some conditions on robust orthogonal signal sets are derived. Walsh function sets are found to be very weak against CFO, since they produce large spurious signals. As robust orthogonal signal sets against CFO, the rows of circulant Hadamard matrices are proposed and their error performanses are evaluated. The results show that they are good M-ary orthogonal signal sets in the presence of CFO.

The performance of an M-ary spread-spectrum multiple-access (M-ary/SSMA) scheme in the presence of carrier frequency offset is discussed in this paper. The influence of carrier frequency offset on the non-coherent reception of M-ary/SSMA signals is examined and it is shown that the carrier frequency offset degrades the performance remarkably, yet. this influence has a distinctive property. Making use of this property, we propose a new M-ary/SSMA scheme that can mitigate the influence of the carrier frequency offset. The scheme is based on the assignment of two distinctive Hadamard codes to in-phase and quadrature components of the transmitted signal. The effect of simultaneous transmission is evaluated in terms of bit-error-rate performance with the carrier frequency offset. As the result, it is observed that the satisfactory bit-error-rate performance can be achieved in the presence of carrier frequendy offset.

We studied effects of 50-200-keV electrons on semiconductor devices using BEASTLI (backscattered electron assisting LSI inspection) method. When irradiating semiconduc-tor devices with such high-energy electrons, we have to note two phenomena. The first is surface charging and the second is device damage. In our study of surface charging, we found that a net positive charge was formed on the device surface. The positive surface charges do not cause serious influence for observation so that we can inspect wafers without problems. The positive surface charging may be brought about because most incident electrons penetrate the device layer and reach the conducting substrate of the semiconductor device. For the device damage, we studied MOS devices which were sensitive to electron-beam irradiation. By applying a 400- annealing to electron-beam irradiated MOS devices, we could restore the initial characteris-tics of MOS devices. However, in order to recover hot-carrier degradation due to neutral traps, we had to apply a 900- annealing to the electron-beam irradiated MOS devices. Thus, BEASTLI could be successfully used by providing an apporopri-ate annealing to the electron-beam irradiated MOS devices.

We propose an algorithm for image decomposition based on Hadamard functions, realized by answer-in-weights neural network, which has simple architecture and is explored with steepest decent method. This scheme saves memory consumption and it converges fast. Simulations with least mean square (LMS) and absolute mean (AM) errors on a 128128 image converge within 30 training epochs.

This paper discusses the performance of non-coherent reception for M-ary spread-spectrum (M-ary/SS) signals in the presence of carrier frequency offset. In general, the M-ary/SS scheme is expected to be of higher spectral efficiency than the conventional DS/SS schemes, but its performance may be degraded by the carrier frequency offset. We, therefore, analyze the effect of carrier frequency offset on the performance of the non-coherent M-ary/SS system with orthogonal modulation using a set of sequences generated by the Hadamard matrix. As a result of the analysis, it has been found that the carrier frequency offset may cause a great deal of degradation in the performance, and that its effect has a distinctive property which is due to the characteristic of Hadamard matrix, at the same time. Making use of this property, we propose two schemes that can mitigate the effect of carrier frequency offset: one is based on choise of the code sequences, the other is on the error correcting code. The effectiveness of the schemes is evaluated in the terms of symbol-error-rates through analysis and computer simulation.

Synchronization has been one of the problems in M–ary spread spectrum communication systems. In this letter, we propose the frame synchronization method using the Hadamard matrix and a frame synchronization method of PCM communication systems. Moreover, we analyze the probabilities of keeping synchronous state and frame renewal rates, and we evaluate the relationship between these probabilities and the number of stages of counters.

In this letter we present an electronic circuit based on a neural net to compute the discrete Walsh transform. We show both analytically and by simulation that the circuit is guaranteed to settle into the correct values.

Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.

Surface damage to n-type silicon wafers induced by Reactive Ion Etching (RIE) with CF4 gas was evaluated using X-ray photoelectron spectroscopy (XPS) and the current-voltage (I-V) characteristics of Au/n-Si Schottky diodes fabricated on the damaged surface. The reaction products (SiF, SiF2, and SiF3) in the damaged layer were detected by XPS. Assuming the surface damage on a silicon wafer induced by RIE acts as a donor, the donor density was found to be about 21019 cm-3. The distribution of SiF3 and the donor density in the depth direction were almost equal. The thickness of the damaged layer was about 15 nm. These findings suggest that the donor in the damaged layer on a silicon surface induced by RIE may be SiF3.

This letter describes damages of piezoelectric polymer using in hydrophones to measure high acoustic pressures at the focal point of Extracorporeal Shockwave Lithotripter (ESWL).

In recent years, the digitalization of transmission links, such as optical fibre cables, satellite links, and terrestrial microwave links, has been progressed rapidly in many countries. In addition, many types of digital studio equipment have been developed and TV programs can be produced or edited without any picture quality degradation by using such equipment, for example, digital VTR. A high-efficiency bit-reduction coding system is the most promising and effective means for this situation in terms of reducing the cost of digital transmission of TV programs with high picture quality. Considering this background, a new digital coding system has been developed, which makes it possible to transmit up to 4 NTSC TV programs simultaneously over a single DS3 45Mbps link including two high quality sound channels and one 64kbps ancillary data channel for each TV program. The principal bit-reduction technique employed is 2 dimensional intraframe WHT (Walsh Hadamard Transform) coding, which gives higher coding performance for composite TV signals than DCT (Discrete Cosine Transform) coding. In order to attain high picture quality at around 8Mbps for 4 channel transmission, a 3 dimensional adaptive quantization cube which reflects human visual perception sufficiently is employed in the intraframe WHT coding scheme. The hardware has been made compact like a home use VTR. In this paper, first, the algorithm of the coding scheme developed for the coding system is presented, and then the system configuration and its basic coding performance are described.