We performed a time dependent percolation analysis of the degradation phenomena in ultra-thin CoFeB/MgO/CoFeB magnetic tunneling junctions. The objective was to understand the microscopic degradation physics of coherent tunneling and the thickness limitation of the MgO barrier. We propose two models: a trap assisted tunneling (TAL) model and a filamentary defect assisted leakage (FAL) model. The correlation between resistance drift behavior and barrier lifetime was then calculated and compared with real data based on these models. The relationship between the resistance drift behavior and barrier lifetime was found to be well explained by the TAL model, the random trap formation in the barrier and the percolation path formation which lead to barrier breakdown. Based on the TAL model, the measured TDDB Weibull slope (β) was smaller than the value estimated by the model. By removing the effect of some initial defects in the barrier, an ultra-thin MgO tunneling barrier in MTJ has the potential for a much better lifetime with a better Weibull slope even at 3ML thickness. This method is rather simple but useful to deeply understand the microscopic degradation physics in dielectric films under TDDB stress.

We fabricated high-quality domain-inverted MgO: LiNbO$_3$ structures with 3.0 and 2.0~$mu$m periods using applying votage to the corrugation electrode. We found that keeping the crystal temperature at 150$^{circ}$C for 12 hours before applying voltage was effective for obtaining good uniformity. We also demonstrated an application of the structures with 3.0~$mu$m period to electro-optic Bragg deflection modulator for the first time.

Co/Pd multilayer films are prepared on fcc-Pd underlayers of (001), (011), and (111) orientations hetero-epitaxially grown on MgO single-crystal substrates at room temperature. The effects of underlayer orientation, Co and Pd layer thicknesses, and repetition number of Co/Pd bi-layer on the structure and the magnetic properties are investigated. fcc-Co/fcc-Pd multilayer films of (001), (011), and (111) orientations epitaxially grow on the Pd underlayers of (001), (011), and (111) orientations, respectively. Flatter and sharper Co/Pd interface is formed in the order of (011) < (111) < (001) orientation. Atomic mixing around the Co/Pd interface is enhanced by deposition of thinner Co and Pd layers, and Co-Pd alloy phase is formed. With increasing the repetition number (decreasing the thicknesses of Co and Pd layers), perpendicular magnetic anisotropy is promoted. Stronger perpendicular anisotropy is observed in the order of film orientation of (001) < (011) < (111). Perpendicular anisotropy of Co/Pd multilayer film is considered to be originated from the two sources; the interface anisotropy and the magnetocrystalline anisotropy associated with Co-Pd lattice shrinkage along the perpendicular direction. In order to enhance the perpendicular anisotropy of Co/Pd multilayer film, it is important to align the film orientation to be (111) and to enhance the lattice distortion along the perpendicular direction.

The discharge properties and chemical surface stability of CeO2 containing Sr (CeSrO) as the candidate for high-γ protective layer of noble plasma display panels (PDPs) are characterized. CeSrO films have superior chemical stability, because of the decrease in reactiveness on surface due to their fluorite structure. The discharge voltage is 50 V lower than that of MgO films for a pure discharge gas of Ne/Xe = 85/15 at 60 kPa. However the topmost surface, monolayer, of the CeSrO film relevant to the discharge property is hardly recovered from the damage by CO2 impurity in discharge gas. We can expect that by pumping down to a sufficiently low CO2 partial pressure (lower than 1 10-3 Pa), PDP panels with very high efficiency are realized with CeSrO protective layer.

A stacked structure consisting of ∼ 1 nm-thick MgO and ∼ 4 nm-thick HfO2 was formed on thermally grown SiO2/Si(100) by MOCVD using dipivaloymethanato (DPM) precursors, and the influences of N2 anneal on interfacial reaction and defect state density in this stacked structure were examined. The chemical bonding features of Mg atom were evaluated by using an Auger parameter independently of positive charge-up during XPS measurements. With Mg incorporation into HfO2, a slight decrease in the oxidation number of Mg was detectable. The result suggests that Mg atoms are incorporated preferentially near oxygen vacancies in the HfO2, which can be responsible for a reduction of the flat band voltage shifts observed from C-V characteristics.

Novel thermopiles based on modulation doped AlGaAs/InGaAs, AlGaN/GaN, and ZnMgO/ZnO heterostructures are proposed and designed for the first time, for uncooled infrared image sensor application. These devices are expected to offer high performances due to both the superior Seebeck coefficient and the excellently high mobility of 2DEG and 2DHG due to high purity channel layers at the heterojunction interface. The AlGaAs/InGaAs thermopile has the figure-of-merit Z of as large as 1.110-2/K (ZT = 3.3 over unity at T = 300 K), and can be realized with a high responsivity R of 15,200 V/W and a high detectivity D* of 1.8109 cmHz1/2/W with uncooled low-cost potentiality. The AlGaN/GaN and the ZnMgO/ZnO thermopiles have the advantages of high sheet carrier concentration due to their large polarization charge effects (spontaneous and piezo polarization charges) as well as of a high Seebeck coefficient due to their strong phonon-drag effect. The high speed response time τ of 0.9 ms with AlGaN/GaN, and also the lower cost with ZnMgO/ZnO thermopiles can be realized. The modulation-doped heterostructure thermopiles presented here are expected to be used for uncooled infrared image sensor applications, and for monolithic integrations with other photon detectors such as InGaAs, GaN, and ZnO PiN photodiodes, as well as HEMT functional integrated circuit devices.

Minimizing the residual impurity gases is a key factor for reducing temporal dark image sticking. Therefore, this paper uses a vacuum-sealing method that minimizes the residual impurity gases by enhancing the base vacuum level, and the resultant change in temporal dark image sticking is then examined in comparison to that with the conventional sealing method using 42-in. ac-PDPs with a high Xe (11%) content. As a result of monitoring the difference in the display luminance, infrared emission, and perceived luminance between the cells with and without temporal dark image sticking, the vacuum-sealing method is demonstrated to reduce temporal dark image sticking by decreasing the residual impurity gases and increasing the oxygen vacancy in the MgO layer. Furthermore, the use of a modified driving waveform along with the vacuum-sealing method is even more effective in reducing temporal dark image sticking.

In this study, the microwave dielectric properties of the Mg4Ta2O9 and Mg5Ta4O15 ceramics with composition ratio and sintering temperature were investigated and the dielectric resonators with these ceramics were simulated. TiO2 was doped in the Mg4Ta2O9 ceramics for improvement of temperature property. The (1-x)Mg4Ta2O9-xTiO2 and Mg5Ta4O15 ceramics were prepared by solid-state reaction method. According to the X-ray diffraction data, the (1-x)Mg4Ta2O9-xTiO2 ceramics had main phase of the Mg4Ta2O9 and MgTi2O5 peaks were appeared by additions of TiO2. In the Mg5Ta4O15 ceramics, the Mg4Ta2O9 and MgTa2O6 phase were coexisted and Mg5Ta4O15 phase was appeared with increments of sintering temperature. Microwave dielectric properties of (1-x)Mg4Ta2O9-xTiO2 ceramics were affected by MgTi2O5 and TiO2 phase. The quality factor had a little decrement compared to pure Mg4Ta2O9, but there was excellent improvement in TCRF by addition of TiO2. Densifications of the Mg4Ta2O9 and MgTa2O6 and existence of the Mg5Ta4O15 phase had influence on the microwave dielectric properties of the Mg5Ta4O15 ceramics. Dielectric constant, quality factor and TCRF of the (1-x)Mg4Ta2O9-xTiO2 and Mg5Ta4O15 ceramics sintered at 1450 were 11.5622.5, 24980186410 GHz, -36.02+19.72 ppm/ and 8.2, 89473 GHz, -10.91 ppm/, respectively. ADS was used for simulation of DR. The simulated DR with the 0.5Mg4Ta2O9-0.5TiO2 and Mg5Ta4O15 ceramics had the S21 of -35.034 dB at 11.97 GHz and -28.493 dB at 10.50 GHz, respectively.

Fe thin films were deposited directly and via Ag underlayer on glass and MgO(100) substrates by MBE. Polycrystal Fe films grew on the glass substrate while single crystal films grew on the MgO(100) substrate. Fe film growth followed the Volmer-Weber mode for both cases. The Fe film structure was influenced by the surface roughness of Ag underlayer at the early stage of film growth. The relationships between the Fe thin film morphology and the magnetic properties are discussed.

We developed a new method to improve the efficiency of the PDP (plasma display panel) by the use of a novel protecting film or Gd doped MgO film. In the cells of the PDP, the VUV (vacuum ultraviolet ray) is generated by Xe discharge. The VUV is simply absorbed by the protecting film or MgO film. Therefore, normally the absorbed VUV doesn't contribute to the light conversion efficiency. However, the novel protecting film or MgO:Gd film radiates the ultraviolet ray of which 317 nm wavelength, by the irradiation of the shorter wavelength VUV, and it excites the blue phosphor. Consequently the efficiency of blue emission is improved.

Reactive sputtering of a metallic target in DC planar magnetron discharge shows a drastic mode transition between metallic and oxide modes. To describe the experimental results quantitatively, a new reactive sputtering model including the secondary electron emission coefficient of a target has been developed. The model is based on a simple reactive gas balance model proposed by Berg et al., and can quantitatively describe experimental results such as the oxygen flow rate dependence of deposition rate and discharge, observed for MgO sputter-deposition.

The relationships between lattice orientation of the electron-beam evaporated MgO layer used as protecting layer for ac plasma displays (ac-PDPs) and the discharge characteristics of color ac-PDPs were investigated by the measurements of ion-induced secondary electron emission. It is proved that values of γi for MgO are large in the order of (220) orientation, (200) orientation, and (111) orientation, that is, γi(220) > γi(200) > γi(111). The values of φ for different lattice orientation are obtained by the measurements of thermionic emission and photo emission. The aging measurements for testing panels with the different lattice orientation of MgO layer revealed that performance of those panels are excellent in the order of (220), (200), and (111). In particular, luminance and luminous efficiency become larger in the order of (220), (200), and (111). It is pointed out that the degree of longevity, sustaining voltage, and memory margin for ac-PDPs with protecting materials as MgO are estimated by the measurements of γi.

We investigated the relationship between the film characteristics and the sputtering rate of the MgO protecting layer in AC-PDP. As possible elements for determining the sputtering rate, we considered the density, orientation, and surface morphology. With respect to the orientation, we found that the sputtering rate increased for the sequence of (200) < (220) < (111). However, we noticed that orientation and surface structure are not really decisive factors affecting the sputtering rate; the density of the film is most important.

In order to improve luminance and luminous efficiency of color ac plasma displays (PDPs), absorption characteristics of ultraviolet rays were investigated for dielectric materials from a viewpoint of protecting layer of ac PDPs. The double protecting layer of MgF2 and MgO is clarified to be excellent property to improve the optical performance of color ac PDPs. The double protecting layer of MgF2 and MgO was applied to the barrier-rib electrode color ac PDPs and resulted in high luminance and luminous efficiency of 1030 cd/m2 and 1.0lm/W, respectively.

Protective layers in AC plasma display panels (PDP) are usually formed by vacuum vapor deposition or sputtering. It is important to study the protective MgO layer by means of screen-printing for fabricating a large size PDP and reducing its cost. With the objectives of enlarging the panel size and reducing cost, we studied the fabrication of the protective MgO layer by means of screen-printing. In this study, we succeeded in lowering the drive voltage by using a MgO powder prepared by vapor phase oxidation instead of conventional decomposition of the magnesium salt. Further, by adding a MgO liquid binder, we attained a good luminous efficiency twice as high as that attained with a sputtered protective layer and lowered the drive voltage. When this protective layer was combined with He-Xe gas enclosure, the half-life of luminance was 5,000 hours. With Ne-Xe gas, the luminance deteriorated no more than 40% after 5,000 hours. A screen-printed protective MgO layer containing no MgO liquid binder showed a short half-life of 800 hours even with the use of Ne-Xe gas. In this case, the discharge voltage changed greatly and some cells did not discharge. It is concluded that the combination of an ultrafine MgO powder prepared by vapor phase oxidation and a MgO liquid binder can clear the way for making AC PDPs with a long lifetime, high efficiency, and low voltage a practical reality.