A reduced dark leakage current, without degrading the near-infrared responsivity, is reported for a vertical pin structure of Ge photodiodes (PDs) on n+-Si substrate, which usually shows a leakage current higher than PDs on p+-Si. The peripheral/surface leakage, the dominant leakage in PDs on n+-Si, is significantly suppressed by globally implanting P+ in the i-Si cap layer protecting the fragile surface of i-Ge epitaxial layer before locally implanting B+/BF2+ for the top p+ region of the pin junction. The P+ implantation compensates free holes unintentionally induced due to the Fermi level pinning at the surface/interface of Ge. By preventing the hole conduction from the periphery to the top p+ region under a negative/reverse bias, a reduction in the leakage current of PDs on n+-Si is realized.

To realize three-dimensional (3D) optical interconnection on large-scale integration (LSI) circuits, layer-to-layer couplers based on Si-photonics platform were reviewed. In terms of optical cross talk, more than 1 µm layer distance is required for 3D interconnection. To meet this requirement for the layer-to-layer optical coupler, we proposed two types of couplers: a pair of grating couplers with metal mirrors for multi-layer distance coupling and taper-type directional couplers for neighboring layer distance coupling. Both structures produced a high coupling efficiency with relatively compact (∼100 µm) device sizes with a complementary metal oxide semiconductor (CMOS) compatible fabrication process.

Aiming to solve the input/output (I/O) bottleneck concerning next-generation interconnections, 5×5-millimeters-squared silicon-photonics-based chip-scale optical transmitters/receivers (TXs/RXs) — called “optical I/O cores” — were developed. In addition to having a compact footprint, by employing low-power-consumption integrated circuits (ICs), as well as providing multimode-fiber (MMF) transmission in the O band and a user-friendly interface, the developed optical I/O cores allow common ease of use with applications such as multi-chip modules (MCMs) and active optical cables (AOCs). The power consumption of their hybrid-integrated ICs is 5mW/Gbps. Their high-density user-friendly optical interface has a spot-size-converter (SSC) function and permits the physical contact against the outer waveguides. As a result, they provide large enough misalignment tolerance to allow use of passive alignment and visual alignment. In a performance test, they demonstrated 25-Gbps/ch error-free operation over 300-m MMF.

Research and development of a multi-degree colorless, directionless and contentionless reconfigurable optical add-drop multiplexer (CDC-ROADM) has recently been attracting a lot of attention. A large-scale transponder aggregator (TPA) is indispensable for providing high-capacity flexible connections to optical networks. In this paper, we report our study of the requirements for the TPA, which is a key technology for achieving flexible optical networks. To meet the requirements, we have developed an 848 TPA prototype based on Si photonics technology. This prototype was made with a few 88 Si optical switches and designed to be used with a commercial ROADM system. The 88 Si optical switches are made by integrating 152 Mach Zehnder (MZ) Thermo Optoelectronic (TO) 22 optical switch elements. A double gate structure is introduced to achieve the high extinction ratio (ER) required for optical communication. To the best of our knowledge, this is the world's first Si-TPA that can be used with a commercial ROADM system. By evaluating the basic optical characteristics utilizing real-time 100 Gbps digital coherent detection as one of today's practical technologies and a 4.4 THz spectral bandwidth 20 Tbps super-channel with digital coherent detection, as a promising future technology, we have confirmed that our prototype Si-TPA has the potential for practical use and future extensibility.

Photonic integrated circuits (PICs) produced by large-scale integration (LSI) on Si platforms have been intensively researched. Since thermal diffusion from the LSI logic layer is a serious obstacle to realizing a Si-based optical integrated circuit, we have proposed and realized athermal wavelength filters using Si slot waveguides embedded with benzocyclobutene (BCB). First, the athermal conditions were theoretically investigated by controlling the waveguide and gap width of the slot waveguides. In order to introduce the calculated waveguide structures to wavelength filters, the propagation losses and bending losses of the Si slot waveguides were evaluated. The propagation losses were measured to be 5.6 and 5.3 dB/cm for slot waveguide widths of 500 and 700 nm, respectively. Finally, athermal wavelength filters, a ring resonator, and a Mach-Zhender interferometer (MZI) with a slot waveguide width of 700 nm were designed and fabricated. Further, a temperature coefficient of -0.9 pm/K for the operating wavelength was achieved with the athermal MZI.

We studied various types of 2D and 3D Si-based photonic crystal structures that are promising for future photonic integrated circuit application. With regard to 2D SOI photonic crystal slabs, we confirmed the formation of a wide photonic bandgap at optical communication wavelengths, and used structural tuning to realize efficient single-mode line-defect waveguides operating within the bandgap. As regards 3D photonic crystals, we used a combination of lithography and the autocloning deposition method to realize complicated 3D structures. We used this strategy to fabricate 3D full-gap photonic crystals and 3D/2D hybrid photonic crystals.