An optical receiver for hybrid SCM video distribution systems that distribute AM, QAM (quadrature amplitude modulation) and FM TV signals simultaneously is investigated. We propose a novel receiver configuration called the Frequency Division type Receiver (FDR) with consists of a photo detector, filter, and multiple preamplifiers. The receiver is compared with existing receivers in terms of optical sensitivity, distortion characteristics, and configuration simplicity. We clarify that the newly developed FDR type receiver is most suitable for hybrid SCM video distribution systems.

Atmospheric optical communication (AOC) system using subcarrier PSK modulation is proposed and its superiority to OOK modulation in the presence of scintillation is discussed theoretically. An experimental AOC setup with a subcarrier modulated by 155.52(Mb/s) DPSK at light wave-length λ=0.83(µm) over an 1.8(km) outdoor path is employed to show the performance. Theoretical and experimental results are compared under scintillation in clear weather and a good agreement is observed. Finally, AOC systems using subcarrier M-ary PSK and multiple subcarriers are proposed and discussed.

This paper describes an overview of wireless communications based on fiber-radio technologies from the viewpoint of system applications, particularly in the area of microcell radio systems. Feasible fiber-radio networks design are detailed in order to increase system performance and cost effectiveness. The benefits of the evolving fiber-radio microcell system are discussed with a spectral delivery scheme to meet traffic demands. Foreseeable electronic and optic technologies are reviewed in light of the key parameters to optimize the overall system. This strategy will play a role in broadband and flexible networks.

A CMOS design to achieve high drivability is examined for lower power supply voltage in 0.5 µm ULSI. The design consists of two points. (1) A very narrow (50 nm) sidewall is used to achieve high drivability and also to obtain hot-carrier-reliability. (2) A retrograded channel profile with NMOS and PMOS is designed to achieve high drivability and also to reduce short channel effect. It is shown that the propagation delay times (tpd) of a unloaded Inverter and a loaded 2-way NAND gate are improved 30% with the newly designed CMOS, compared with the conventionally designed CMOS. It is also proved that the tpd keeps the scaling trend of the previous-5 V-era even in 3.3 V-era by adapting the newly designed CMOS. Moreover, 7.1 ns multiplication time of 1616-bit multiplier is obtained under 0.5 µm design rule.

Hot carrier reliability due to residual damage in the gate oxide created by synchrotron X-ray irradiation is investigated for subquarter-micrometer NMOSFETs under a wide irradiation-dose range (103,000 mJ/cm2). Although irradiation-induced interface-traps and positive charges are completely eliminated after 400 post-metalization-annealing, neutral electron traps partially remain. The effects of the residual trapa on hot-carrier degradation can be negligible when gate oxides thinner than about 5 nm are used, and it is found that there is no effect of irradiation damage on interface-trap generation due to injected hot-carriers. It is concluded that the influence of synchrotron radiation X-ray lithography on hot-carrier-induced degradation in subquarter-micrometer NMOSFETs can be negligible.

This paper proposes the laser diode receiving mixer which utilizes the laser diode nonlinearity. The laser diode receiving mixer can make the bidirectional fiber optic link simple and cost-effective. These laser diodes are applied to configure the LD-LD MIX link which consists of two laser diodes, two local oscillators, two microwave switches and one fiber cable. The LD-LD MIX link configuration is extended to introduce novel two fiber optic links, i.e. the local suppression link and the image cancellation link. These links utilize the combination of microwave circuits and optical devices. These configurations are experimentally investigated at microwave frequencies and the QPSK signal transmission is successfully demonstrated.

A multicarrier modulation is considered as an effective technique in high speed digital transmission under the multipath fading. In this paper, we theoretically analyze the bit error rate (BER) performance of the multicarrier modulation/differential detection scheme, and show the trade-offs between the BERs and the number of carriers or the guard period to clarify the optimum values to minimize the BER in the number of carriers and the guard period.

This paper describes a fiber-optic microcell radio system with a spectral delivery switch to meet traffic demands. Optical link performance is discussed from the view points of link loss and noise figure aimed at system design. The theoretical carrier-to-noise ratio (CNR) performance is shown as a function of the input electrical power of the laser and the received optical power. Improvement of dynamic range defined by both CNR and intermodulation distortion is proposed by using the frequency modulation (FM) technique. The experimental results using the proposed technique indicate that the performance is much better than that of conventional methods. Moreover, economical diversity planning delivery methods over fibers are presented. This strategy will provide more cost effective and flexible networks.

This paper reports the influence of optical reflection induced noise and distortion for optical fiber feeder systems for microcellular mobile communication systems. Since the optical feeder requires very wide dynamic range, noise and distortion must be suppressed to an extremely low level. From optical transmission experiments and theoretical analysis, the basic characteristics of the reflection induced noise and distortion were investigated. By using these results, it was estimated that, for currently used analog mobile telephone systems, the number of connectors with 35 dB reflectance must be limited to less than 17, in order to suppress the noise caused by the connector reflections. Moreover, it was confirmed that the reflection induced distortion drastically decreases according to the increase of the length between reflectors. Therefore, the distortion can be suppressed by expanding the connector spacing to more than 7 meters.

In coherent optical subcarrier multiplexing (SCM) systems, the performance degradation of the system due to the phase noise of lasers restricts the maximum number of stations and channels that the system can serve. However, the effects of phase noise on the performance of the coherent SCM system with distributing Local Oscillator (LO) in local loop have not been analyzed. On the other hand, a limit on both the number of channels and stations can be effectively alleviated by using coding technique. In this paper, the effects of phase noise of lasers on the performance of frequency shift keying (FSK) SCM system with distributing LO in local loop are analyzed in terms of carrier-to-noise ratio (CNR) penalty. Second, the effects of Reed-Solomon (RS) coding on FSK SCM system with distributing LO in local loop are analyzed. It is shown that both the number of channels and stations can be increased by using coding technique.

Noise properties in cascaded erbium-doped fiber amplifiers used in subcarrier multiplexed analog video distribution systems are experimentally examined. The noise dependency on signal wavelength is measured for a 4 stage EDFA cascade, and it is shown that an optical narrow bandpass filter is not necessary after each fiber amplifier for signal wavelength of 1.5511.560µm and that optical bandpass filters are necessary for shorter wavelength than 1.551µm to avoid the noise degradation by spontaneous-spontaneous beat noise. Finally, the attainable distribution loss is estimated for AM and FM video distribution systems.

Hot carrier stressing is carried out on ultra-thin-film SOI/pMOSFET's under a front gate operation. Degradations of both front and back gate characteristics are estimated. Effects of trapped electron in the front and the back gate oxide on device characteristics are also estimated. In a triode region, it is found that degradation in front gate characteristics is correlated with that in back gate characteristics, although ΔVth(b) is twenty times as large as ΔVth(f), due to difference between the front gate and the buried oxide thickness. In a pentode region, Δβ/β0 in a forward-mode is larger than that in a reverse-mode. This is because of the non-uniformly distributed hot carrier damage along the channel. Based on the charge-coupling theory, damages in the front gate and buried oxide by hot carrier effects are estimated separately. Flat-band-voltage shift in the back gate due to trapped charges in the buried oxide, is obtained from Vth (f) dependence on back gate bias. For Leff=2.0 µm devices, the flat-band-voltage shift varies in the range of 1.00 to 1.50 V. This indicates that trapped electrons are created in the buried oxide. Trapped electrons in the buried oxide increase gm(f) through the effect equivalent to back gate bias. From gm(f) dependence on back gate bias, it is found that effective channel length is decreased by trapped electrons in the front gate oxide near the drain. Therefore, it is worth noticing that, in hot carrier effects in ultra-thin-film SOI/pMOSFET's, gm is increased not only by the reduction of effective channel length but also by the equivalent back gate bias effect.

A study of hot-carrier-induced photon emission in thin SOI/MOSFETs has been carried out both for bonded-SOI and SIMOX/SOI. The photon emission is observed not only in the drain region but also in the source region for SOI/MOSFETs, whereas only in the drain region for conventional bulk MOSFETs. From the emission spectrum, it can be concluded that the emission mechanism of the source region is probably a photon-assisted direct recombination of electrons and holes, while both the recombination and Bremsstrahlung are the possible mechanism for the drain region. The total photo intensity from SOI/MOSFETs increases as the SOI film thickness decreases, showing that strong impact ionization occurs near the drain region for thinner SOI devices. The relation between the lifetime and the photo intensity for SOI/MOSFETs is very similar to that between the lifetime and the substrate current for conventional bulk/MOSFETs, proving that photon emission is a good indicator of the hot carrier degradation in thin SOI/MOSFETs. The lifetime measurement using the photon emission both for SOI and bulk devices indicates that longer lifetime can be expected for thin film SOI/MOSFETs with a reduced drain bias which will be indispensable for future sub-half micron MOSFETs.

Hot-carrier characteristics in ultra-thin SOI MOSFET's (T-SOI MOSFET's) with gate-overlapped LDD have been investigated. The change in transistor static characteristics after hot carrier stress was mainly observed as positive threshold voltage (Vt) shifts due to trapped electrons, while in bulk-Si MOSFET's drain current degradation was dominant. The hot-carrier life time in T-SOI MOSFET's was comparable to that in bulk-Si devices at low drain voltage, but the life time dependence on drain voltage was different from that in bulk-Si MOSFET's, and the Vt degraded rapidly at the condition that parasitic bipolar breakdown began to occur. This implies that the drain supply voltage in T-SOI MOSFET's is determined directly by parasitic bipolar breakdown voltage unlike bulk-Si MOSFET's in which it is determined by hot-carrier reliability. The gate-overlapped LDD structure was compared with single drain structure and proved to provide better hot-carrier endurance by the improvement of the parasitic bipolar breakdown voltage. The hot-carrier reliability in the back channels of T-SOI MOSFET's was also investigated, and it was found that the back channel tends to be degraded more easily than front channel with large positive Vt shifts. These results suggest that the front Vt shifts in T-SOI devices are related with electron injection into the back surface of the T-SOI layer through charge coupling at the condition that the parasitic bipolar breakdown occurs.

The velocity overshoot and hot carrier effects in thin-film SOI-nMOSFETs have been studied using a two-dimensional device simulator based on the energy transport model. It has been found that the velocity overshoot effect in a nearly-intrinsic device becomes pronounced in the short channel region because of their high carrier mobility. The distribution of the electron velocity in a 0.2 µm channel length SOI device shows that the velocity overshoot takes place over the whole channel region, which enhances the drive capability significantly. The behaviors of hot carriers injected into the gate oxide and the back oxide have been simulated for the first time by using the energy distribution functions of electrons and holes at the SOI-SiO2 interface and solving the current continuity equation in the oxide layer. It has been found that hot carriers are injected not only into the gate oxide but also into the back oxide, which can degrade hot-carrier reliability in small-featured thin-film SOI-MOSFETs.

A film carrier with 48 peripheral-contacts, which is applicable to ultra-high speed GaAs digital integrated circuits (ICs) with a more than 10 Gbps operation, has been developed. The film carrier has been realized using the following newly developed techniques; (1) wave guides with a well-controlled characteristic impedance of 50 Ω, (2) precise vias of as small as 50 µm diameter conducting both sides of grounded metal planes on a polyimide film, and (3) a feed-through structure for high speed input signals with good impedance matching. The film carrier was molded by resin after ILB (inner lead bonding) to a chip with a copper plate heat spreader. As an application, the film carrier has been applied to a 3 Gbps operational 4-bit GaAs multiplexer IC, and has been proved to have excellent high-frequency characteristics.

This paper describes the impact of EDFAs on AM/FM FDM subcarrier multiplexing (SCM) all-fiber video distribution (AFVD) systems. As AM/FM hybrid system using EDFAs which can simultaneously distribute 11 AM-TV channels and 50 FM-TV channels is proposed and discussed. 4-stage amplifier-branch transmission experiments are introduced. The construction and performance of a newly designed 50 channel FM tuner are also presented.

This paper discusses and evaluates, from the viewpoints of definition, analysis, and performance, frequency assignment schemes that enable the efficient assignment of multiple-bandwidth carriers on the transponder in SCPC/FDMA systems with demand assignment operation. The system considered handles carriers of two different bandwidths, and assigns only consecutive slots on the transponder band to broadband carriers. Three types of frequency assignment schemes are proposed, each of which incorporates one or both of two assignment concepts: (1) pre-establishment of assignment priorities on the transponder band, and (2) establishment of broadband slots to guide broadband carrier assignment. Following a definition of the schemes, equations are derived to theoretically analyze performance factors such as call loss for the narrowband and broadband carriers, and system utilization efficiency. Finally, theoretical performance calculated for various traffic and system conditions are presented and evaluated, for the purpose of comparison between the three schemes. Computer simulation results are also presented, to demonstrate the accuracy of the derived equations and to supply data for models too large for theoretical computation. Main results obtained are as follows. (1) Regardless of traffic or system conditions, the assignment scheme incorporating both assignment priorities and broadband slots shows the best performance in terms of broadband call loss and system utilization efficiency. (2) The establishment of broadband slots improves performance when the ratio of broadband traffic to the total traffic volume is high, but worsens performance when the narrowband traffic ratio is higher. (3) All aspects of performance improve with the increase of the total number of assignable slots on the transponder band.

We propose the coherent subcarrier multiplexed (SCM) system with distributing local oscillator (LO) in local loop. The proposed system can realize multichannel transmission with one optical carrier by using the SCM technique and has no need to have LO at each station. Therefore the proposed system becomes cost-effective. The proposed SCM system uses bandpass filter to select a specific channel. We analyze CNR of the system with frequency-shift keying (FSK) in a multioctave configuration. First, the general expression of CNR is derived and is shown for the following parameters such as the number of channels, the position of station on the loop, and the number of stations on the loop. Second, optimal phase modulation (PM) index is derived, and the optimal CNR, minimum required power of lasers, and maximum number of stations that the proposed system can serve are shown by using it. Moreover CNR of the proposed system is compared with that of the system having LO at each station in local loop. It is shown that the proposed system can obtain good performance at the expense of slight increase of the output power of only two lasers at the central station. Therefore the proposed system is cost-effective and practical.

Low-field mobilities and velocity versus electric field relations are among the key input parameters for drift-diffusion simulations of field-effect and bipolar transistors. For example, most device simulations that treat scattering from ionized impurities contain mobilities or velocity versus field relations based on the Born approximation (BA). The BA is insensitive to the sign of the charged impurity and is especially poor for ionized impurity scattering because of the relatively strong scattering of long-wavelength carriers, which have low energies, and therefore violate the validity condition for the BA. Such carriers occur at high symmetry points in the Brillouin zone and are critical for device behavior. There has been a tendency in the past to assume that majority and minority mobilities are equal. This assumption can lead to incorrect interpretations of device data and thereby misleading design strategies based on such simulations. We have calculated the majority electron and minority hole mobilities in GaAs at 300 K for donor densities between 51016 and 11019 cm-3 and the majority hole and minority electron mobilities for acceptor densities between 51016 and 11020 cm-3. We have included all the important scattering mechanisms for GaAs: acoustic phonon, polar optic phonon, nonpolar optic phonon (holes only), piezoelectric, ionized impurity, carrier-carrier, and plasmon scattering. The ionized impurity and carrier-carrier scattering processes have been calculated with a quantum mechanical phase-shift analysis to obtain more accurate matrix elements for these two scattering mechanisms. We compare the total scattering rate for majority electrons due to ionized impurities based on exact phase shifts and on the BA used by Brooks-Herring. We also present additional data that show the differences between the exact phase-shift analyses and the BA for majority electron scattering rates as functions of carrier energy and scattering angle. These results show that the calculated low-field mobilities are in good agreement with experiment, but they predict that at high dopant densities minority mobilities should increase with increasing dopant density for a short range of densities. This effect occurs because of the reduction of plasmon scattering and the removal of carriers from carrier-carrier scattering because of the Pauli exclusion principle. Some recent experiments support this finding. These results are important for device modeling because of the need to have reliable values for the minority mobilities and velocity-field relations.