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[Keyword] gain enhancement(4hit)

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  • A Novel Quad-Band Branched Monopole Antenna with a Filter Suppressing Higher Order Modes

    Shingo YAMAURA  Kengo NISHIMOTO  Yasuhiro NISHIOKA  Ryosuke KOBAYASHI  Takahiro INO  Yoshio INASAWA  

     
    PAPER-Antennas and Propagation

      Pubricized:
    2023/05/16
      Vol:
    E106-B No:10
      Page(s):
    938-948

    This paper proposes a novel quad-band branched monopole antenna with a filter. The proposed antenna has a simple configuration in which branch-elements are added to a basic configuration consisting of a mast and dielectric wires. The antenna is characterized by performances such as wideband impedance matching, gain stabilization, and gain enhancement. Wideband impedance characteristics satisfying the voltage standing ratio of less than 2 are obtained by exciting a parallel resonance at the lowest band and multi-resonance at high bands. The filter suppressing higher order modes is used for gain stabilization, so that averaged gains above 5dBi are obtained at the quad-band. The antenna has a high gain of 11.1dBi because the branch-elements work as an end-fire array antenna at the highest band. Furthermore, it is clarified that an operating frequency is switched by using a variable bandpass filter at the lowest band. Last, a scale model of the antenna is fabricated and measured, then the effectiveness of the proposed antenna is demonstrated.

  • A Replica-Amp Gain Enhancement Technique for an Operational Amplifier with Low Mismatch Sensitivity and High Voltage Swing

    Junya MATSUNO  Masanori FURUTA  Tetsuro ITAKURA  Tatsuji MATSUURA  Akira HYOGO  

     
    PAPER

      Vol:
    E99-A No:2
      Page(s):
    547-554

    A new gain enhancement technique for an operational amplifier (opamp) using a replica amplifier is presented to reduce a sensitivity of a gain mismatch between the main amplifier and the replica amplifier which limits a gain-enhancement factor in the conventional replica-amp techniques. In the proposed technique, the replica amplifier is used to only amplify an error voltage of the main amplifier. The outputs of the main amplifier and the replica amplifier are added to cancel the error voltage of the main amplifier. The proposed technique can also achieve a higher output voltage swing because the replica amplifier amplifies only the error voltage. In case of using a fully-differential common-source opamp for the main amplifier and a telescopic opamp for the replica amplifier, Monte Carlo simulation at 100 iterations shows that the proposed amplifier has almost the same gain variation with 15.5dB gain enhancement and about five times output voltage swing expanding for a supply voltage of 1.2V compared with the single closed-loop amplifier using the telescopic opamp.

  • A Circuit Technique for Enhancing Gain of Complementary Input Operational Amplifier with High Power Efficiency

    Tohru KANEKO  Masaya MIYAHARA  Akira MATSUZAWA  

     
    PAPER

      Vol:
    E98-C No:4
      Page(s):
    315-321

    Negative feedback technique employing high DC gain operational amplifier (op-amp) is one of the most important techniques in analog circuit design. However, high DC gain op-amp is difficult to realize in scaled technology due to a decrease of intrinsic gain. In this paper, high DC gain op-amp using common-gate topology with high power efficiency is proposed. To achieve high DC gain, large output impedance is required but input transistors' drain conductance decreases output impedance of conventional topology such as folded cascode topology with complementary input. This is because bias current of the output side transistors is not separated from the bias current of the input transistors. On the other hand, proposed circuit can suppress a degradation of output impedance by inserting common-gate topology between input and output side. This architecture separates bias current of the input transistors from that of the output side, and hence the effect of the drain conductance of input transistors is reduced. As the result, proposed circuit can increase DC gain about 10,dB compared with the folded cascode topology with complementary input in 65,nm CMOS process. Moreover, power consumption can be reduced because input NMOS and PMOS share bias current. According to the simulation results, for the same power consumption, in the proposed circuit gain-bandwidth product (GBW) is improved by approximately 30% and noise is also reduced in comparison to the conventional topology.

  • Design of High-Performance Analog Circuits Using Wideband gm-Enhanced MOS Composite Transistors

    Yang TIAN  Pak Kwong CHAN  

     
    PAPER-Electronic Circuits

      Vol:
    E93-C No:7
      Page(s):
    1199-1208

    In this paper, we present a new composite transistor circuit design technique that provides superior performance enhancement to analog circuits. By adding a composite transistor to the cascode-compensated amplifier, it has achieved a 102 dB DC gain, and a 37.6 MHz unity gain bandwidth while driving a 2 nF heavy capacitive load at a single 1.8 V supply. In the comparison of power-bandwidth and power-speed efficiencies on figures of merit, it offers significantly high values with respect to the reported state-of-the-art works. By employing the composite transistor in a linear regulator powered by a 3.3 V supply to generate a 1.8 V output voltage, it has shown fast recovery response at various load current transients, having a 1% settling time of 0.1 µS for a 50 mA or 100 mA step, while a 1% settling time of 0.36 µS for a maximum 735 mA step under a capacitive load of 10 µF with a 1 Ω ESR resistor. The simulated load regulation is 0.035% and line regulation is 0.488%. Comparing its results with other state-of-art LDO reported results, it also validates the significant enhanced performance of the proposed composite-transistor-based design in terms of speed, current driving capability and stability against changes in environmental parameters. All the proposed designs are simulated using chartered semiconductor (CSM) 1.8 V/3.3 V 0.18 µm CMOS triple-well process technology with thin/thick oxide options and BSIM3 model parameters.