Short-range multiple-input and multiple-output (SR-MIMO) has attracted much attention, because the technique makes it possible to raise channel capacity to several hundred Gbit/s by utilizing the millimeter-wave band (e.g., 60 GHz band). Although the opposed transceiving antennas are assumed to be accurately positioned in previous studies regarding SR-MIMO, a very important issue is to evaluate the performance degradation due to displacement between MIMO transceivers. In SR-MIMO over the millimeter-wave band, any displacement is perceived as significant because the wavelength is small. This paper evaluates the influence on SR-MIMO transmission performance over millimeter-wave caused by displacement between the transmitting and receiving antennas. The channel capacity is found to degrade by 5% when the horizontal displacement is 1 mm and by 2.7% when the rotational displacement is 10 degrees. In addition, comparing performances obtained with a number of antenna array arrangements clarifies that a square pattern arrangement is suitable for short-range wireless transmission.

A broadband RF front-end having a direct conversion architecture has been developed. The RF front-end consists of two broadband quadrature mixers, a multi-band local oscillator, and a broadband low-noise variable gain amplifier (LNVGA). The mixer achieves broadband characteristics through the incorporation of an in-phase power divider and a 45-degree power divider. The in-phase power divider achieves broadband characteristics through the addition of a compensation capacitor. The 45-degree power divider achieves broadband phase characteristics through the addition of a compensation capacitor and a compensation resistor. The local oscillator, which is composed of two VCOs, two frequency dividers, and four switches, can cover three systems including one FDD system. The LNVGA achieves its broadband characteristics without the use of reactance elements, such as inductors or capacitors. In a trial demonstration, when the RF frequency was between 900 MHz and 2.5 GHz, the mixer for a demodulator experimentally demonstrated an amplitude balance of less than 1.6 dB and a quadrature phase error of less than 3 degrees. When the RF frequency was between 900 MHz and 2.5 GHz, the mixer for a modulator demonstrated an image ratio of less than -30 dBc. The local oscillator demonstrated multi-band characteristics, which are able to cover the target frequencies for three systems (PDC, PHS, 2.4 GHz WLAN). From 900 MHz to 2.5 GHz, the amplifier shows a noise figure of less than 2.1 dB and a gain of 28 1.6 dB.

A procedure for quickly developing highly integrated multifunctional MMICs by using the three-dimensional masterslice MMIC technology has been developed. The structures and advanced features of this technology, such as miniature transmission lines, a broadside coupler, and miniature function block circuits, enable multifunctional MMICs to be quickly and easily developed. These unique features and basic concept of the masterslice technology are discussed and reviewed to examine the advantages of this technology. As an example of quick MMIC development, an amplifier, a mixer, and a down-converter are fabricated on a newly designed master array.

Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We analyzed single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. The performance of single- and multi-layer inductors was measured and calculated by electromagnetic field simulation. The multi-layer inductors produce 2-11 times higher inductance than that of conventional inductors on 2D-MMICs although they are the same size. This means that the proposed multi-layer inductors have smaller areas with the same inductances than those of conventional inductors. We also conducted the first-ever investigation of how performance factors such as parasitic capacitance, Q-factor, and self-resonant frequency are degraded in multi-layer inductors vis-a-vis those of conventional inductors. A microwave amplifier using multi-layer inductors was demonstrated and found to reduce circuit size by 20%.

Subharmonically Injection-locked oscillators (ILO's) with very wide injection-locking ability are presented. Two types of ILO MMIC's with this ability are proposed. The oscillation frequency tuning function of the ILO MMIC is very useful for expansion of the injection locking range at higher subharmonics. One consists of a shunt varactor diode inserted into the oscillation loop, and the other incorporates a vector-combining configuration with in-phase divider and 90 degree hybrid. Using three-dimensional MMIC's technology which can offer miniature and high-density passive circuits, the vector-combining type ILO is formed in a very compact area of 1. 7 mm2. Fabricated 20 GHz-band ILO achieves a wide tuning ranges of 870 MHz, resulting in a very wide locking range for higher subharmonics. The wide frequency tuning ability also reduces phase noise, shortens a locking time and compensates the center frequency deviation against temperature, as well as increasing locking range. The measured results show that the ILO configuration is extremely suitable for realizing simple, fully monolithic and low phase noise millimeter-wave frequency synthesizers.

A series-fed beam-scanning array employing a MUlti-Stage Configured microstrip Antenna with Tunable reactance devices (MUSCAT) is proposed. The proposed antenna significantly expands the beam scanning range and achieves high efficiency. This antenna comprises unit element groups, whose elements are placed close to each other and employ tunable reactance devices. Analyses and experiments on the unit element groups show that their multi-stage configuration extends the phase shift range and increases the radiation efficiency, e.g., a 120phase shift and the radiation efficiency of more than 50% are achieved, when three stages are employed. The radiation pattern of the fabricated MUSCAT array antenna comprising eight unit element groups is measured. A beam scanning range of 27, which is greater than twice the beam scanning range of a non-multi-stage configuration, is achieved.

This paper reviews the advantages of the silicon three-dimensional MMIC technology such as low loss transmission lines, high integration level, and high Q-factor on-chip inductors. Coupled to the masterslice concept, this technology also offers simple design procedure, short turn-around-time, low cost, and potential integration with LSI circuits. A K-band amplifier and an up-converter demonstrate the high frequency operation and low-power consumption benefits of the Si 3-D MMIC technology. A C-band Si-bipolar single-chip transceiver is proposed to illustrate the high integration level offered by the masterslice concept. Finally, the recent advances we achieved toward high Q-factor on-chip inductors provide the design of the S-band low noise amplifier presented in this paper.

Novel three-dimensional structures for passive elements--inductors, capacitors, transmission lines, and airbridges--have been developed to reduce the area they consume in GaAs MMICs. These structures can be formed with a simple technology by electroplating along the sidewalls of a photoresist. Adopting the new structures, most passive elements in MMICs have been shrunk to less than 1/4 the size of conventional ones.