Osamu SHIMOMURA Yoshihiro TACHIBANA
This letter presents data of the electrical conductivity of KDP solution in the region of 1070 and 2040g KDP/100g water. It was found that there is a point where the slope of the temperature characteristic of the electrical conductivity change and it corresponds to the saturation point of the solution.
A 16 bit parallel parallel multiplier is developed by using LCML macrocell circuit design and an improved SST macrocell array with a 0.35 µm emitter width. This multiplier consists of carry-save and carry-lookahead adders. A 6 ns multiplication time is achieved 1.93 W/chip.
Shuichi FUJITA Takashi MIZUTANI
A new gate current model for the AlGaAs/GaAs heterostructure MISFETs is proposed. This model is derived by taking account of the relationship between the surface potential at the hetero-interface and the gate voltage. The new gate current model is shown to be suitable for analyzing logic circuits with heterostructure MISFETs.
Masayuki IZUTSU Hidetoshi NAKANISHI Tadasi SUETA
The modulation performance of traveling-wave type LiNbO3 guided-wave light modulators with coplanar waveguide structure is studied. The analysis shows that the use of a y-cut plate offers a low voltage modulation with decreased electrode separation although the characteristic impedance becomes low.
Masahiro MURAGUCHI Takatomo ENOKI Kimiyoshi YAMASAKI Kuniki OHWADA
A 20 GHz band monolithic low noise amplifier combining improved SAINT-FET technology and optimized circuit design has been developed. The amplifier has a measured noise figure of less than 3.5 dB with a minimum gain of 4.2 dB over the 18.5 GHz to 20 GHz range. The optimal noise figure is 2.9 dB with a gain of 5.5 dB at 19 GHz. Standard threshold-voltage deviation of the process monitor FRTs is only 70 mV over the entire area of the 2-inch wafer.
Masaaki MATSUURA Tadatoshi TANIFUJI Yoshikazu YAMAMOTO
A 1.3 µm edge-emitting LED is used to launch an average optical power of 13.7 dBm into single-mode fibers. This permits analog video signal transmission over a distance of 42 km with a loss margin of 5 dB. No degradations of DG, DP, and signal-to-noise ratio have been observed.
Masashi USAMI Shigeyuki AKIBA Katsuyuki UTAKA
The threshold current Ith of a 1.5 µm range InGaAsP/InP λ/4-shifted DFB laser with low-reflectivity ends was theoretically expected to be 10 mA or less. Experimentally, Ith of 14-16 mA at 20 and the sub-mode suppression ratio of about 35 dB or more in the temperature range of 10-70 were obtained.
Kimihiro SASAKI Masatoshi MORIKAWA Seijiro FURUKAWA
Emitter crowding effect and emitter Gummel number of amorphous SiC: H emitter HBT have been investigated. Collector current density has been remarkably enhanced by narrowing the emitter stripe width. The emitter Gummel number has been estimated as high as 21014s/cm4.
Switching devices capable of handling more than 800 V exhibit relatively large switching loss. A new current feedback Bi-MOS consisting of a Bipolar Junction Transistor, MOS-FET and current transformer is proposed in this note. The new device reduces switching loss in 100 kHz operation and is expected to result in a DC-DC converter efficiency greater than 90%.
Yoshio KOBAYASHI Yukimasa KABE
The unloaded Q,Qu of the TE01 mode for a dielectric rod resonator encased within a cavity is accurately computed for dielectric constant of 24 at 11.9 GHz. Qu105 is obtained for loss tangent tan =0. HighQ resonators having Qu23,000 are realized using new BMT ceramics (tan4.2105).
Takao NAGATOMO Yasushi HATOOKA Osamu OMOTO
Epitaxial GaN films have been grown on sapphire substrates at 750 by reactive ion plating. GaN film has a direct energy band gap of 3.36 eV. Conductivity, electron concentration and Hall mobility of undoped epitaxial GaN films are 6160 S/cm, 2101811019cm3 and 35100 cm2/Vs, respectively.
Tadashi TAKENAKA Yasushi SOMA Koichiro SAKATA
Lead zirconate PbZrO3-based materials were studied as a new piezoceramic group based on their dielectric and piezoelectric properties. In the PbZrx(ZN1/3Nb2/3)1xO3 system, the antiferroelectric phase changes to the ferroelectric phase at x=0.930.94. Piezoelectric properties are characterized by the large coupling factor of the thickness shear mode.
Tsuyoshi YAKIHARA Katsuyoshi HAMASAKI Tsutomu YAMASHITA Toshiaki MATSUI Risao HAYASHI
All-NbN edge junction nanobridges have been reproducibly fabricated. They had nearly ideal characteristics: sharply defined critical current, high resistance100Ω, sharp gap structure at about 4 mV, large IoRn products, and low excess current. The sharp LC resonance step at about 1.5 mV was observed in the nanobridge SQUID's. The noise equivalent power was NEP10-19 W/Hz in Josephson mixing at 101 GHz.
Kazuhiko SAKAKIBARA Seiichi MUROYAMA
This letter describes an analysis of a series resonant converter in which the effects of the output transformer's magnetizing inductance on the converter's output characteristics are considered. It is clarified that the output power decreases when the magnetizing inductance has a low value.
Junichi TAKAGI Hitoshi YANAGIURA Hideo KOBAYASHI Nobuo TOMITA
This letter proposes a new type of the slack fiber accommodation block composed of book-shaped plastic sheets. The block, capable of accommodating 800-fiber splices, exhibits good transmission characteristics with an average slack fiber accommodation loss of 0.33 dB, which is smaller by 25% than the value attained for the previous type accommodation block.
Motoi IWASHITA Makoto IMASE Terunao SONEOKA Hiroshi NAKANISHI
We propose a problem of a highly reliable subscriber transmission line network by the graph theory and solve the problem. By using the theory, we present a construction method for realizing the highly reliable network.
Mitsuhiro YOKOTA Takashi TAKENAKA Otozo FUKUMITSU
Scattering of a three-dimensional Hermite-Gaussian beam mode by a dielectric circular cylinder at normal incidence is considered by using the complex-source-point method. The scattered fields are examined numerically for a lowest-order mode.
Masataka SUGAHARA Wataru TAKANO Katsumi NIKI Nobuo HANEJI Nobuyuki YOSHIKAWA Katsuhiro IRIE
The measurement of dielectric property of cytochrome-c3 films reveals unusually large dielectric constant.
This paper consider the problem: Given two points u and v in a simple polygon P, divide P into three parts, locus of points closer to u, that closer to v, and that equidistant from u and v. An O(n2)-time algorithm is presented where n is the number of vertices of the simple polygon.