This letter presents experimental results of an efficient TE-TM mode converter using a Z-propagation LiNbO3 waveguide. A three-section electrode structure with 10 mm length allows us to control mode coupling and phase matching independently by two different applied voltages. The drive voltage is only 5.2 V with the mode conversion efficiency of 98% when the phase matching condition is satisfied by the voltage tuning. This mode converter is also free from optical damage because of the use of Z-propagation LiNbO3.

The effects of current gain and emitter resistance on the switching performance of ECL gates with GaAs/AlGaAs HBTs are analyzed by circuit simulation. A minimum current gain of 10 and a maximum emitter resistance of less than one fifth of the load resistance were found to be necessary for stable ECL inverter operation.

Mechanical interaction in a multi-actuator is suppressed by utilizing a trapezoidal driving current. Fundamental performance of this method is examined experimentally and analytically.

An analytical estimation of the date replacement method for optical disk media is discussed. A modified Gilbert model is introduced to describe the bit-error occurrence in the reproduction process. This model deduces the defect-relief probability required to estimate the efficiency of a date replacement method.

On-chip testing for 30 K-gate masterslice with freely configured SRAM AND/OR ROM blocks was investigated. Multiplier fault coverage was about 93 percent. The validity of on-chip testing was confirmed in masterslices containing over 20 K gates with memory blocks.

Room temperature cw operation of transverse mode stabilized 680-nm InGaAIP laser diodes have been achieved for the first time. A self-aligned structure was fabricated by two-step metalorganic chemical vapor deposition, which included the selective growth technique.

A three-dimensional magnetic field analysis method is applied to flat-type magnetic circuits for a head positioning actuator. Calculated results agree well with experimental results. This method also leads a better magnetic circuit structure which realizes a uniform magnetic field distribution.

This letter describes the program structure and performance toward a newly developed VLSI circuit simulator, called SUPER-SPICE. In the SUPER-SPICE program, the waveform relaxation method is implemented. A small circuit analyzer is based on SPICE2. Therefore, with attention paid to simulation modes, not only transient analysis, but also DC and DC transfer curves, can be simulated by the simulator. Further, many kinds of nonlinear device models in SPICE2 are permitted to be used for VLSI circuit simulation.

A 1024 pixel, 14µm pitch, high resolution linear infrared CCD image sensor is developed, especially for remote sensing use. Using a PtSi/Si Schottky barrier instead of a conventional Pd2Si/Si Schottky barrier, middle and short wavelength infrared image can be taken. The power consumption by an on-chip amplifier is only 7 mW, which is suitable for satellite application.

0.25-µm gate low-noise high electron mobility transistors (HEMTs) have been developed, using epitaxial wafers grown by metal-organic-chemical vapour deposition (MOCVD) technique. Minimum noise figures of 0.75 dB and 1.2 dB with associated gains of 11.1 dB and 7.9 dB are obtained at 12 GHz and 18 GHz, respectively, at room temperature. These are the lowest noise figures yet reported for low-noise HEMTs fabricated on MOCVD epitaxial wafers.

The switching performance of the collector top AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been investigated by simulating the operation of single-stage inverters, five-stage ring oscillators, and 1/4 frequency dividers including the comparison between the collector-top HBT and the standard emitter-top-HBT.

Hard and insulating carbon films were prepared by r.f. plasma chemical vapor deposition with d.c. bias. The interfacial characteristics of MIS structures using carbon films as insulator were investigated. The interface state density was 1011eV1cm2 for carbon-Si and carbon-InP MIS diodes.

A method of quick displaying documents stored in electrical filing systems is discussed. The index codes generated automatically when the pictures of an original page are stored, can be decoded to full-page-size rough pictures on the CRT display. The pages are reconstructed at a maximum speed of nearly 20 pages per second. This method makes it possible to quick look over the pages in the image-coded document filing system.

A 1.3 µm edge-emitting LED is used to launch an average optical power of 13.7 dBm into single-mode fibers. This permits analog video signal transmission over a distance of 42 km with a loss margin of 5 dB. No degradations of DG, DP, and signal-to-noise ratio have been observed.

The modulation performance of traveling-wave type LiNbO3 guided-wave light modulators with coplanar waveguide structure is studied. The analysis shows that the use of a y-cut plate offers a low voltage modulation with decreased electrode separation although the characteristic impedance becomes low.

A 20 GHz band monolithic low noise amplifier combining improved SAINT-FET technology and optimized circuit design has been developed. The amplifier has a measured noise figure of less than 3.5 dB with a minimum gain of 4.2 dB over the 18.5 GHz to 20 GHz range. The optimal noise figure is 2.9 dB with a gain of 5.5 dB at 19 GHz. Standard threshold-voltage deviation of the process monitor FRTs is only 70 mV over the entire area of the 2-inch wafer.

Switching devices capable of handling more than 800 V exhibit relatively large switching loss. A new current feedback Bi-MOS consisting of a Bipolar Junction Transistor, MOS-FET and current transformer is proposed in this note. The new device reduces switching loss in 100 kHz operation and is expected to result in a DC-DC converter efficiency greater than 90%.

The threshold current Ith of a 1.5 µm range InGaAsP/InP λ/4-shifted DFB laser with low-reflectivity ends was theoretically expected to be 10 mA or less. Experimentally, Ith of 14-16 mA at 20 and the sub-mode suppression ratio of about 35 dB or more in the temperature range of 10-70 were obtained.

Emitter crowding effect and emitter Gummel number of amorphous SiC: H emitter HBT have been investigated. Collector current density has been remarkably enhanced by narrowing the emitter stripe width. The emitter Gummel number has been estimated as high as 21014s/cm4.

Influence of the resistance of the ground line in D/A converter has been analyzed. The resistance produces a significant linearity error if a conventional switching sequence is used. The proposed new compensation technique named symmetrical switching reduces the error to 25 %.