Ultra-low-power-consumption and high-speed DCFL circuits have been fabricated by using 0.2-µm Y-shaped gate E/D-heterojunction-FETs (HJFETs) with a high-aspect-ratio gate-structure, which has an advantage of reducing the gate-fringing capacitance (Cf) to about a half of that of a conventional low-aspect-ratio one. A fabricated 51-stage ring oscillator with the 0.2-µm Y-shaped gate n-AlGaAs/i-InGaAs E/D-HJFETs shows the lowest power-delay product of 0.21 fJ with an unloaded propagation delay of 34.9 ps at a supply voltage (VDD) of 0.4 V. We also analyze the DCFL switching characteristics by taking into account the intrinsic gate-to-source capacitance (Cgsint) and the Cf. The analysis results for the power-delay products agree well with our experimental results. Our analysis also indicates the DCFL circuit with the high-aspect-ratio Y-shaped gate E/D-HJFETs can reduce the power-delay products by 35% or more below 0.25-µm gate-length as compared to conventional ones with the low-aspect-ratio Y-shaped gate HJFETs. These results clarify that the Cf-reduction of the Y-shaped gate HJFETs is more effective in improving the power-delay products than reducing the gate-length.

Six chips of the GaAs standard cell LSIs have been developed for a synchronous digital hierarchy (SDH) interface unit in 10 Gbit/s optical communication systems. Two of them are the frame termination LSIs for SDH, and four are the byte multiplexing and demultiplexing LSIs. The LSI configuration with a careful thermal design were needed to realize a natural air-cooling operation. As a result, the unit was composed of eight chips with six kind of LSIs and these LSIs consist of 1 K to 3 K gates. The LSIs were designed with the standard cell libraries based on 0.5µm gate DCFL (Direct Coupled FET Logic) operating at a low power supply voltage of 1.5V. The propagation delay time of standard DCFL inverter was 25 ps with a power consumption of 0.45mW in the experimental results. The LSI design methodology using these libraries were discussed to achieve the data processing of 1.25 Gbit/s signals under a natural air-cooling condition. The maximum operating speeds of them were at least 1.4 GHz and the power consumptions were as low as under 1.8 W, which resulted in fully high speed operations under a natural air-cooling condition at an ambient temperature of 100.

A decision circuit with a function of detecting the phase difference between input data and clock signal is presented. Direct coupled FET logic (DCFL) was used for basic gates. The circuit architecture was chosen to be suitable for DCFL. Novel circuit technologies were adopted to the phase detectors. In GaAs/AlGaAs pseudomorphic inverted HEMT's were used for fabrication. The decision circuit showed a wide phase margin of 288 degrees and small decision ambiguity of 27 mVpp up to 10 Gb/s. Linear and wide-range phase detection was achieved as well as an ability to compensate the variation of transition density, input bias and temperature.

GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer chip sets have been successfully developed. The 64-bit 156 Mb/s parallel data output or input of these chip sets can be directly connected to CMOS LSIs. These chip sets consist of a 10Gb/s 4: 1 MUX IC, a 10 Gb/s 1: 4 DEMUX IC, four 2.5 Gb/s 16: 1 MUX LSIs and four 2.5 Gb/s 1: 16 DEMUX LSIs. This multi-chip construction is adopted for low power dissipation and high yield. The basic circuit employed in the 10 Gb/s4: 1 MUX/DEMUX ICs is an SCFL circuit using 0.4 µm-gate FETs with a power supply of -5.2 V, and that in 2.5 Gb/s 16: 1 MUX/DEMUX LSIs is a DCFL circuit using 0.6 µm-gate FETs with a power supply of -2.0 V. These chip sets have functions for synchronization among these ICs and to enable bit shift to make the system design easier. In the 10 Gb/s 4: 1 MUX IC, a timing adjuster is adopted. This timing adjuster can delay the timing of the most critical path by 50 ps. Even if the delay times are out of order due to fluctuations in process, temperature, power supply voltage and other factors, this timing can be revised and the 4: 1 MUX IC can operate at 10 Gb/s. Furthermore, a 48-pin quad flat package for 10 Gb/s 4: 1 MUX/DEMUX ICs has been newly developed. The measured insertion loss is 1.7 dB (at 10 GHz), and the isolation is less than -20 dB (at 10 GHz). These values are sufficient in practical usage. Measurements of these chip sets show desirable performance at the target 10 Gb/s. The power dissipations of the 64: 1 MUX/DEMUX chip sets are 10.3 W and 8.2 W, respectively. These chip sets is expected to contribute to high speed telecommunication systems.

High speed GaAs ICs (Integrated Circutis) using FETs (Field Effect Transistors) are reported. As the fabricating techniques, ion implantation processes for both 0.5 µm and 0.2 µm gate FETs using W/Al refractory metal and 0.2 µm recessed gate process with MBE grown epitaxial wafers are shown. These fabrication processes are selected depending on the circuit speed and the integration level. The outline of the circuit design and the examples of ICs, which are developed for 10 Gb/s optical communication systems, are also shown with the obtained characteristics.

A 3.2 GHz, 50 mW, 1 V, GaAs clock pulse generator (CG) based on a phase-locked loop (PLL) circuit has been designed for use as an on-chip clock generator in future high speed processor LSIs. 0.5 µm GaAs MESFET and DCFL circuit technologies have been used for the CG, which consists of 224 MESFETs. An "enhanced charge-up current" inverter has been specially designed for a low power and high speed voltage controlled oscillator (VCO). In this new inverter, a voltage controlled dMESFET is combined in parallel with the load dMESFET of a conventional DCFL inverter. This voltage controlled dMESFET produces an additional charge-up current resulting in the new VCO obtaining a much higher oscillation frequency than that of a ring oscillator produced with a conventional inverter. With a single 1 V power supply (Vdd), SPICE calculation results showed that the VCO tuning range was 2.25 GHz to 3.65 GHz and that the average VCO gain was approximately 1.4 GHz/V in the range of a control voltage (Vc) from 0 to 1 V. Simulation also indicated that at a Vdd of 1 V the CG locked on a 50 MHz external clock and generated a 3.2 GHz internal clock (=50 MHz64). The jitter and power dissipation of the CG at 3.2 GHz oscillation and a Vdd of 1 V were less than 8.75 psec and 50 mW, respectively. The typical lock range was 2.90 GHz to 3.59 GHz which corresponded to a pull-in range of 45.3 MHz to 56.2 MHz.

Two types of circuit architecture for GaAs LSI are described. The first circuit is named Stacked DCFL which has supply voltage compatibility with Si CMOS/BiCMOS and ECL operating on 3 V or 3.3 V. A divide by 128/129 prescaler IC has been developed to confirm the Stacked DCFL circuit operation. The second circuit is named SVFL which operates on single supply voltage by using Schottky FET characteristics in spite of normally-on FET logic. Both circuit architectures are based on the virtual ground concept. The transition time of 45 psec was obtained by the SVFL ring oscillator circuit fabricated with 1 µm gate length FET process, and the transition time of DCFL using the same process was from 80 psec to 100 psec. Stacked DCFL and SVFL are candidates for an internal gate and an input/output interface circuit for GaAs ASIC, respectively.

We developed a 32-bit pseudorandom number generator (RNG) operating at liquid nitrogen temperature based on HEMT ICs. It generates maximum-length-sequence codes whose primitive polynomial is X47+X42+1 with the period of 247-1 clock cycle. We designed and fabricated three kinds of cryogenic HEMT IC for this system: A 1306-gate controller IC, a 3319-gate pseudorandom number generator (RNG) IC, and a buffer IC containing a 4-kb RAM and 514 gates. We used 0.6-µm gate-length Se-doped GaAlAs/GaAs HEMTs. Interconnects were Al for the first layer and Au/Pt/Ti for the second layer with a SiON insulator between them. The HEMT ICs have direct-coupled FET logic (DCFL) gates internally and emitter-coupled logic (ECL) compatible input-putput buffers. The unloaded basic delay of the DCFL gate was 17 ps/gate with a power consumption of 1.4 mW/gate at liquid nitrogen temperature. We used an automatic cryogenic wafer probe we developed and an IC tester for function tests, and used a high-speed performance measuring system we also developed with a bandwidth of more than 20 GHz for high-speed performance tests. Power dissipations were 3.8 W for the controller IC, 4.5 W for the RNG IC, and 3.0 W for the buffer IC. The RNG IC, the largest of the three HEMT ICs, had a maximum operating clock rate of 1.6 GHz at liquid nitrogen temperature. We submerged a specially developed zirconium ceramic printed circuit board carrying the HEMT ICs in a closed-cycle cooling system. The HEMT ICs were flip-chip-packaged on the board with bumps containing indium as the principal component. We confirmed that the RNG system operates at liquid nitrogen temperature and measured a minimum system clock period of 1.49 ns.