Recent progress on the ultrahigh-speed optical transmission experiments are reviewed including the ultrashort pulse generation, high-speed timing extraction, all-optical multi/demultiplexing. Also discussed are the latest 100 Gbit/s experiments and a scope to higher bit-rate, longer distance optical transmission.

Beam-steering devices are attractive for spatial optical interconnections. Those devices are essential not only for fixed connecting routed optical interconnections, but for flexible connecting routed optical interconnections. The flexible connecting routed optical interconections are more powerful than the conventional fixed connecting routed ones. Structures and characteristics of beam-steering devices, a beam-scanning laser diode and a fringe-shifting laser diode, are reported for those interconnections. Using these lasers, the configurations of several optical interconnections, such as optical buses and optical data switching links as examples of fixed and flexible connecting routed optical interconnections are discussed.

This paper reports on broad-range wavelength tuning characteristics of DBR lasers which make use of a newly proposed multiple-phase-shift super structure grating (SSG). The reflection characteristics of the SSG reflector are analyzed theoretically. We found that the SSG reflector has periodic sharp reflection peaks each with high reflectivities thus making it a suitable wavelength selective reflector for single-mode lasers. The expected characteristics were evident in multiple-phase-shift SSGs fabricated using a new method which involves multiple-phase-shift insertion. DBR lasers with multiple-phase-shift SSGs were fabricated and their wavelength tuning characteristics were studied. The maximum tuning range is 105 nm in the single longitudinal mode under a CW condition. Dynamic single mode operation was also observed throughout the tuning range.

The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.

A YBCO/CeO2/Au MIS structure (YBCO:YBa2Cu3O7y) is fabricated on a MgO(100) substrate with the help of the all-in-situ electron-beam and heater coevaperation system. The current-voltage (I-V) characteristics of the deposited YBCO film under various gate voltages are examined. Small modulation of the I-V characteristics by gate voltages can be observed. Meanwhile, the surface morphology is also studied by means of an atomic force microscope (AFM). The relation between the field effect and the surface morphology of a thin YBCO film is discussed.

Toward the age of ultra-high-density digital ULSI systems, the development of new integrated circuits suitable for an ultimately fine geometry feature size will be an important issue. Resonant-tunneling (RT) diodes and transistors based on quantum effects in deep submicron geometry are such kinds of key devices in the next-generation ULSI systems. From this point of view, there has been considerable interests in RT diodes and transistors as functional devices for circuit applications. Especially, it has been recognized that RT functional devices with multiple peaks in the current-voltage (I-V) characteristic are inherently suitable for implementing multiple-valued circuits such as a multiple-state memory cell. However, very few types of the other multiple-valued logic circuits have been reported so far using RT devices. In this paper, a new multiple-valued programmable logic array (MVPLA) based on RT devices is proposed for the next-generation ULSI-oriented hardware implementation. The proposed MVPLA consists of 3 basic building blocks: a universal literal circuit, an AND circuit and a linear summation circuit. The universal literal circuit can be directly designed by the combination of the RT diodes with one peak in the I-V characteristic, which is programmable by adjusting the width of quantum well in each RT device. The other basic building blocks can be also designed easily using the wired logic or current-mode wired summation. As a result, a highdensity RT-diode-based MVPLA superior to the corresponding binary implementation can be realized. The device-model-based design method proposed in this paper is discussed using static characteristics of typical RT diode models.

This paper deals with the uniqueness of a solution of the basic equation obtained from the analysis of resistive circuits including ideal diodes. The equation in consideration is of the type of (A-)X=b, where A is a constant matrix, b a constant vector, X an unknown vector satisfying X 0, and a diagonal matrix whose diagonal elements take the value 0 or 1 arbitrarily. The necessary and sufficient conditions for the equation to have a unique solution X 0 for an arbitrary vector b are shown. Some numerical examples are given for the illustration of the result.

This paper proposes fiber optic link configurations for use in microwave and millimeter-wave transmission Higher frequencies,such as millimeter-waves, are well suited to transmission of broadband signals. Photodiodes can operate simultaneously as optical detectors and microwave frequency mixers thanks to their inherent nonlinearities. This allows us to increase the output radio frequncy. But, this also generates undesired spurious frequencies, necessitating the use of microwave filters. We discuss here two fiber optic link configurations, i.e., balanced/image canceling photodiode mixing links utilizing the combination of microwave functional components and optical devices to suppress the local/image frequency without filters. These configurations are experimentally investigated at microwave frequencies and local/image frequency suppression is successfully demonstrated.

This paper proposes the laser diode receiving mixer which utilizes the laser diode nonlinearity. The laser diode receiving mixer can make the bidirectional fiber optic link simple and cost-effective. These laser diodes are applied to configure the LD-LD MIX link which consists of two laser diodes, two local oscillators, two microwave switches and one fiber cable. The LD-LD MIX link configuration is extended to introduce novel two fiber optic links, i.e. the local suppression link and the image cancellation link. These links utilize the combination of microwave circuits and optical devices. These configurations are experimentally investigated at microwave frequencies and the QPSK signal transmission is successfully demonstrated.

This paper was written for LSI engineers in order to demonstrate the effect of optical interconnections in LSIs to improve both the speed and power performances of 0.5 and 0.2 µm CMOS microprocessors. The feasibilities and problems regarding new micronsize optoelectronic devices as well as associated electronics are discussed. Actual circuit structures clocks and bus lines used for optical interconnection are discussed. Newly designed optical interconnections and the speed power performances are compared with those of the original electrical interconnection systems.

Optical interconnection is a rapidly expanding field of optical signal transmission, but it places some stringent requirements on optical devices. This paper introduces the current device characteristics of lasers and photodiodes and discusses the possibility of intra/inter wafer optical interconnection.

The static characteristics of GaInAs(P)/GaInAsP quantum well laser diodes (QW LDs), with graded-index separate-confinement-heterostructure (GRIN-SCH) grown by metalorganic chemical vapor deposition (MOCVD), have been investigated experimentally in terms of threshold current density, internal waveguide loss, differential quantum efficiency and light output power. Very low threshold current density of 410 A/cm2, high characteristic temperature of 113 K, low internal waveguide loss of 5 cm-1, high differential quantum efficiency of 82% and high light output power of 100 mW were obtained in 1.3 µm GRIN-SCH multiple quantum well (MQW) LDs by optimizing the quantum well structure including confinement layer and cavity design. Excellent uniformity for the threshold current, quantum efficiency and emission wavelength was obtained in all MOCVD grown buried heterostructure GRIN-SCH MQW LDs. Lasing characteristics of 1.5 µm GRIN-SCH MQW LDs are also described.

The newly developed GaAs-pin/SLM, that is structured with a GaAs-pin diode photodetector and a ferroelectric liquid crystal as the light phase modulator, shows the accumulative thresholding characteristic against the optical energy of the write-in pulse train. We experimentally investigate this characteristic and discuss its applications to optical parallel processings.

This article proposes a four dimensional autonomous hyperchaos generator whose nonlinear element is only one diode. The circuit is analyzed by regarding the diode as an ideal switch. Hence we can derive the two dimensional return map rigorously and its Lyapunov exponents confirm the hyperchaos generation. Also, a novel mathematical basis for the simplification to the ideal switch is given.