In this study, we investigated Si(100), Si(110) and Si(111) surface flattening process utilizing sacrificial oxidation method, and its effect on Metal-Insulator-Semiconductor (MIS) diode characteristics. By the etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si(100), Si(110) and Si(111) substrates were reduced. The obtained Root-Mean-Square (RMS) roughness of Si(100) was reduced from 0.22 nm (as-cleaned) to 0.07 nm (after etching), while it was reduced from 0.23 nm to 0.12 nm in the case of Si(110), and from 0.23 nm to 0.11 nm in the case of Si(111), respectively. Furthermore, it was found that time-dependent dielectric breakdown (TDDB) characteristics of MIS diodes for p-Si(100), p-Si(110) and p-Si(111) were improved with the reduction of Si surface RMS roughness.

We developed an electrically driven near-infrared broadband light source based on self-assembled InAs quantum dots (QDs). By combining emissions from four InAs QD ensembles with controlled emission center wavelengths, electro-luminescence (EL) with a Gaussian-like spectral shape and approximately 85-nm bandwidth was obtained. The peak wavelength of the EL was blue-shifted from approximately 1230 to 1200 nm with increased injection current density (J). This was due to the state-filling effect: sequential filling of the discrete QD electron/hole states by supplied carriers from lower (ground state; GS) to higher (excited state; ES) energy states. The EL intensities of the ES and GS emissions exhibited different J dependence, also because of the state-filling effect. The point-spread function (PSF) deduced from the Fourier-transformed EL spectrum exhibited a peak without apparent side lobes. The half width at half maximum of the PSF was 6.5 µm, which corresponds to the estimated axial resolution of the optical coherence tomography (OCT) image obtained with this light source. These results demonstrate the effectiveness of the QD-based device for realizing noise-reduced high-resolution OCT.

High structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for high current densityInGaAs/AlAs/InP RTD structures grown by metal-organic vapour phase epitaxy (MOVPE) for THz applications. By using a PL line scanning technique across the edge of the sample, we identify characteristic luminescence from the quantum well (QW) and the undoped/n+ InGaAs layers. By using the Moss-Burstein effect, we are able to measure the free-electron concentration of the emitter/collector and contact layers in the RTD structure. Whilst the n+ InGaAs luminescence provides information on the doping concentration, information on the alloy composition and compositional variation is extracted from the InGaAs buffer layer. The QW luminescence provides information on the average well width and provides a monitor of the structural perfection with regard to interface and alloy disorder.

In this study, we propose and fabricate an oscillator array composed of three resonant-tunneling-diode terahertz oscillators integrated with slot-coupled patch antennas, and which does not require a Si lens. We measure the radiation pattern for single and arrayed oscillator, and calculate the output power using the integration of the pattern. The output power of a single oscillator was found to be ～15 µW. However, using an array configuration, almost combined output power of ～55 µW was obtained.

Transparent organic light-emitting diodes (TOLEDs) were investigated with top electrode of indium-tin-oxide (ITO) by ion-plating method. High deposition rate of 4.4 nm/s was realized without plasma damage of under organic layer. In the TOLEDs with inverted structure, high transmittance of over 75% at 550 nm and bright emission of 1,850 and 1,410 cd/m2, from bottom and top side at 163 mA/cm2, respectively, were obtained.

A highly efficient sky-blue organic light-emitting diode (OLED) based on a thermally-activated delayed fluorescence (TADF) molecule, 1,2-bis(carbazol-9-yl)-4,5-dicyanobenzene (2CzPN), was studied. The sky-blue OLED exhibited a maximum external electroluminescence quantum efficiency (ηEQE) of over 24.0%. In addition, a white OLED using 2CzPN combined with green and orange TADF emitters showed a high ηEQE of 17.3% with a maximum power efficiency of 52.3 lm/W and Commission Internationale de l'Eclairage coordinates of (0.32, 0.43).

This paper summarizes recent progress on modified uni-traveling carrier photodiodes that have achieved RF output power levels of 1.8 Watt and 4.4 Watt in continuous wave and pulsed operation, respectively. Flip-chip bonded discrete photodiodes, narrowband photodiodes, and photodiodes integrated with antennas are described.

This paper describes circuit design and measurement results of a newly proposed GaAs-HBT step-gain amplifier configuration and its application to a 3.3-3.6 GHz WiMAX power amplifier module for use in customer premises equipment. The step-gain amplifier implemented using only a usual HBT process is based on a current-mirror-based, base-collector diode switches and a passive attenuator core for the purpose of bypassing a power-gain stage. The stage allows an individual design approach in terms of gain and attenuation levels as well as large operating current reduction in the attenuation state. To confirm the effectiveness of the proposed step-gain amplifier, a prototype of the amplifier was designed and fabricated, and then a WiMAX power amplifier module was also designed and fabricated as an application example of the proposed configuration to an amplifier product. Measurements are as follows. For a 3.5-V power supply and a 3.5-GHz non-modulated signal, the step-gain amplifier delivers 23.7 dBm of 1-dB gain compressed output power and 10.7 dB of linear gain in the amplification state. In the attenuation state, the amplifier exhibits 21 dBm of 1-dB gain expanded input power, -9.7 dB of gain, and 15 mA of current dissipation while keeping the gain stage switched off and maintaining input and output return loss of less than -10 dB at a 3.5-GHz band. The WiMAX amplifier operating with a 5-V supply voltage and a 64-QAM modulated signal is capable of delivering a 28.5-dBm linear output power, a 37-39 dB gain, and 15% of PAE over a wide frequency range from 3.3 to 3.6 GHz in the high-gain state while keeping error vector magnitude as low as 2.5%. This amplifier, which incorporates the proposed step-gain configuration into its interstage, enables a 24-dB gain reduction and a 45-mA large quiescent current reduction in the low-gain state.

Ni nanodots (NDs) used as nano-scale top electrodes were formed on a 10-nm-thick Si-rich oxide (SiO$_{mathrm{x}}$)/Ni bottom electrode by exposing a 2-nm-thick Ni layer to remote H$_{2}$-plasma (H$_{2}$-RP) without external heating, and the resistance-switching behaviors of SiO$_{mathrm{x}}$ were investigated from current-voltage ( extit{I--V}) curves. Atomic force microscope (AFM) analyses confirmed the formation of electrically isolated Ni NDs as a result of surface migration and agglomeration of Ni atoms promoted by the surface recombination of H radicals. From local extit{I--V} measurements performed by contacting a single Ni ND as a top electrode with a Rh coated Si cantilever, a distinct uni-polar type resistance switching behavior was observed repeatedly despite an average contact area between the Ni ND and the SiO$_{mathrm{x}}$ as small as $sim$ 1.9 $ imes$ 10$^{-12}$cm$^{2}$. This local extit{I--V} measurement technique is quite a simple method to evaluate the size scalability of switching properties.

Super regenerative detectors using a resonant tunneling diode (RTD) were fabricated and investigated for ultra-high frequency detectors. A key point is to use the RTD super regenerative detector for detecting much higher frequencies than the free-running oscillation frequency of the detector. This is possible owing to the superior high frequency characteristics of the RTDs. This has various advantages, such as circuit simplicity, easy design, and low power consumption. Clear detection of 50,GHz signal was demonstrated with a super regenerative detector which has 1.5,GHz free-running frequency. Moreover, detailed experiments revealed that the frequency dependence of the detection efficiency is smooth, and the harmonic frequencies have no effect. This is advantageous for high frequency detection.

We have investigated both the film thickness and surface potential of organic semiconductors deposited on two kinds of electrodes by the simultaneous observation with the dynamic force microscopy (DFM)/Kelvin-probe force microscope (KFM). To clarify the interfacial properties of organic semiconductor, we fabricated samples that imitated the organic light emitting diode (OLED) structure by depositing bis [$N,N '$-(1-naphthyl)-$N,N '$-phenyl] benzidine ($alpha$-NPD) and tris (8-hydroxyquinolinato) aluminum (Alq$_{3}$), respectively, on indium-tin-oxide (ITO) as anode and aluminum (Al) as cathode by the vacuum evaporation deposition using intersecting metal shadow masks. This deposition technique enables us to fabricate four different areas in the same substrate. The crossover area of the deposited thin films were measured by the DFM/KFM, the energy band diagrams were depicted and we considered that the charge behavior of the organic semiconductor depended on the material and the structure.

This paper presents an experimental investigation on the RF characteristics of a 3W-class cryogenically-cooled receiver amplifier employing a gallium-nitride high electron mobility transistor (GaN HEMT) with a blue light for mobile base stations. In general, a cryogenically-cooled receiver amplifier using a GaN HEMT exhibits unstable DC characteristics similar to those found in the current collapse phenomenon because the GaN HEMT loses thermal energy at cryogenic temperatures. The fabricated cryogenically-cooled receiver amplifier achieves stable DC characteristics by injecting blue light into the GaN HEMT instead of thermal energy. Experimental results show that the amplifier achieves fine stable DC characteristics for deviation in the drain-source current from 42% to 5% and RF characteristics for a maximum power added efficiency from 58% to 68% without and with the blue light at 60,K. The fabricated amplifier is effective in reducing the power consumption at cryogenic temperatures. To the best of our knowledge, this paper is the first report regarding RF characteristics of a cryogenically-cooled receiver amplifier using a blue light for mobile base stations.

Optical interfaces have been recently standardized as the main physical layer interfaces for most short length optical communication systems, such as IEEE802.3ae, OIF-VSR, and the Fiber Channel. As interface speed increases, the requirements for forecasting the optical characteristics of direct modulated laser diodes (LDs) also increase because those standards define the specifications for physical layers with optical domains. In this paper, a vertical-cavity surface-emitting laser (VCSEL) equivalent electronic circuit model is described with which designers can simulate the $I-L-V$, S-parameter, and transient characteristics of LDs on a circuit simulator by improving convergence. We show that the proposed VCSEL model can model an 850-nm bandwidth VCSEL with 10-Gbps operation.

A switchable microwave reflector, reflection of which is actively controlled using diodes was proposed. Pin diodes have large resistance and capacitance without DC bias and small resistance and inductance with DC bias in microwave band. The reflector was designed by using the characteristics. In this paper, effects of a periodic structure on the reflector were verified with simulation and equivalent circuit model. A prototype reflector was able to switch between about $-20$ dB and $-0.1$ dB reflection coefficient at 2 GHz.

Laser diode capable of high speed direct modulation is one of the key solution for short distance applications due to their low power consumption, low cost and small size features. Realization of high modulation bandwidth for direct modulated laser maintaining the above mentioned feature is needed to enhance the short distance, low cost data transmission. One promising approach to enhance the modulation speed is to increase the photon density to achieve high modulation bandwidth. So to achieve this target, 1.55 $mu$m InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode interferometer laser diode (active MMI-LD) has been demonstrated [1]. The split pumping concept has been applied for the active MMI-LD and significant enhancement of electrical to optical 3 dB down frequency bandwidth (f$_{mathrm{3dB}})$ up to 8 GHz has been successfully confirmed. The reported high bandwidth for split pump active MMI-LD is around 3.5 times higher than the previously reported maximum 3 dB bandwidth (2.3 GHz) of active MMI-LD without split pumping section. That shows, the splitted multimode pumping section behind the electrically isolated modulation section can potentially improve the modulation bandwidth of active MMI-LD. Clear and open eye diagram had also been confirmed for 2.5 Gbps, (2$^{mathrm{7}}$-1) pseudo random bit sequence (PRBS) modulation.

Excimer laser annealing at 308nm in UV and semiconductor blue laser-diode annealing at 445nm were performed and compared in term of the crystallization depending on electrical properties of Si films. As a result for the thin Si films of 50nm thickness, both lasers are very effective to enlarge the grain size and to activate electrically the dopant atoms in the CVD Si film. Smooth Si surface can be obtained using blue-laser annealing of scanned CW mode. By improving the film quality of amorphous Si deposited by sputtering for subsequent crystallization, both laser annealing techniques are effective for LTPS applications not only on conventional glass but also on flexible sheet. By conducting the latter advanced annealing technique, small grain size as well as large grains can be controlled. As blue laser is effective to crystallize even rather thicker Si films of 1µm, high performance thin-film photo-sensor or photo-voltaic applications are also expected.

Radio over Fiber (RoF) is a promising technology that is suitable for broadband wireless access systems to cover in-building areas and outdoor dead-spots. However, one issue in RoF transmission that should be considered is the nonlinear distortion caused by Electrical/Optical (E/O) converters. Multicarrier RF (Radio Frequency) signal formats such as Orthogonal Frequency Division Multiplexing (OFDM), which are commonly employed in broadband wireless communications, are weak against nonlinearities. To enable the linear transmission of OFDM signal in RoF channel, we propose to employ the Envelop Pulse Width Modulation (EPWM) transmission scheme for RoF channel. Two commonly used E/O converters, Mach-Zehnder modulator and direct-modulation of Distributed Feedback Laser Diode (DFB LD), are employed to validate the proposal. Based on the measured nonlinearities of the E/O converters, they are mathematically modeled and their transmission performance are analyzed. A modified Rapp model is developed for the modeling of the DFB LD. Through simulations and experiments, the proposed scheme is shown to be effective in dealing with the nonlinearities of the E/O converters.

Ultra-high luminance lamps emitting white light with a well-scattered blue spectrum from InGaN/GaN laser diodes and a phosphor-converted yellow spectrum show speckle contrast values as low as LED. Spectral behavior of the laser diodes is analyzed to find the reason why such low values are obtained. As a result, the PWM-driven, multi-longitudinal mode with dynamically broadened line-width is found to have a great effect on reducing speckle contrast. Despite using the lasers, such speckle-free lamps are considered to be very suitable for high-luminance and other various lighting applications.

This paper investigates space and polarization multiplexing for multichannel transmission in a 120-GHz band wireless link system. The 120-GHz-band wireless equipment employs Cassegrain antennas with a gain of about 49dBi and cross-polar discrimination of 23dB. When each of two 120-GHz wireless links transmits a 10-Gbit/s data signal in the same direction over a distance of 800m, a bit error rate (BER) of below 10-12 is obtained when the receivers are set 30m apart. When forward error correction and polarization multiplexing are used for each wireless link, we can set two wireless links within 1m of each other and obtain a BER below 10-12. Moreover, we have experimentally shown that the rain attenuation of V- and H-polarization 120-GHz-band signal is almost the same.

By using impedance (Z) matching circuits in a low-cost transistor outline (TO) CAN package for a 10 Gb/s transmitter, we achieve a cost-effective and small bidirectional optical subassembly (BOSA) with excellent optical transmission waveforms and a > 40% mask margin over a wide temperature range (-10 to 85). We describe a design for Z matching circuits and simulation results, and discuss the advantage of the cost-effective compensation technique.