Competition of two-photon and one-photon absorption in Si-APD was studied. Device should be cooled down in order to clearly observe two-photon absorption at low illumination intensity. Passive Geiger mode operation was studied to sensitively detect small number of carriers generated by two-photon absorption. The illumination intensity dependence of the photocurrent pulse count number is well explained by taking into account the two absorption mechanisms and a dead time period that depends on bias voltage.

A new type of photodetector called "photosensitive floating field emitter, (PFFE)" has been proposed. The PFFE device combines an n-type cone-shaped triode field emitter with a-Si p-i-n photodiode film. However, a PFFE cannot detect two-dimensional distributions of light intensity. In this paper, we propose a novel structure to overcome the above this problem of the PFFE. The device was fabricated on a silicon-on-sapphire substrate to permit irradiation from the backside. p-n photodiodes were constructed within a field emitters, the n+ region being separated by p+ regions to permit detection of two- dimensional light distributions. The emission current of the PFFE/SOS was found to be proportional to the illumination intensity, but the quantum efficiency was only about 2%. This quantum efficiency is lower than that expected. Under irradiation, the emission current increased, but the gate-leakage current increased. This gate-leakage current was several orders of magnitude larger than the emission current. Almost photo-generated electrons lost in the gate electrode.

With the aim of applying a MISS tunnel-diode cell to a high-density RAM, we studied its problems and developed three circuit technologies to solve them. The first, a standby-voltage control scheme, reduces standby currents and increases the signal current by 3.4 times compared to the conventional one. The second, a hierarchical bit-line structure, reduces the number of memory cells in a bit-line without increasing the number of sense amplifiers. The third, a twin-dummy-cell technique, generates a proper reference signal to discriminate read currents. These technologies enable a capacitorless MISS diode cell with an effective cell area of 6F 2 (F: minimum feature size) to be applied to a high-density RAM.

The performance of an indium-gallium-arsenide avalanche photodiode serving as a 1550 nm single-photon detector is investigated. Quantum efficiency is evaluated for laser pulses with an average of < 0.015 photons per pulse, which are important for the demonstration of unconditionally secure quantum key distribution [G. Brassard et al.: Phys. Rev. Lett. 85, 6, p.1330 (2000)]. An operating temperature of 243 K is achieved by thermo-electrical cooling, yielding a quantum efficiency of 18% with a dark-count probability per gate of 2.8 10-5. The results obtained here guarantee unconditionally secure fiber-optic quantum key distribution over 50 km.

This paper presents an even harmonic mixer using self-biased anti-parallel diode pair (APDP). A proposed self-biased APDP is composed of a pair of diodes and self-bias series resistors. At high LO injection level, rectified current is generated by the diodes and reverse voltage is applied to the diodes by the self-bias resistor. Therefore, rapid degradation of conversion loss at high LO input level can be avoided. The effect of self-bias resistor is explained by using simplified behavior model and harmonic balance method, and is evaluated by the measurements of an L-band even harmonic type direct conversion mixer.

A new technique to reduce the isolation network's size in a Marchand balun needed for perfect all-port matching and isolation is proposed. The proposed isolation circuit is realized using a coupled-line phase-inverter in place of the bulky 180line section that has been previously proposed. Analysis of the proposed circuit yields the required relationship between coupling coefficient and electrical length of the coupler. Based on the design equations, the circuit is experimentally demonstrated at 1.8 GHz and has shown excellent results. The obtained output return loss and isolation loss are more than 18 dB and 40 dB, respectively. The proposed balun was then applied to the application of a doubled-balanced ring-diode mixer. The designed mixer achieves a low conversion loss of 6 dB at its operating frequency, which is 1.5 dB lower than for a doubled-balanced diode mixer using a conventional impedance-transforming Marchand balun. The RF-IF and LO-IF isolations are well below 25 dB and 18 dB across 1 GHz RF operating bandwidth, respectively.

Detection efficiency and dark count of a Geiger mode single photon detection avalanche photodiode was studied by a numerical simulation. The ionization process triggered by a single hole injection was simulated at a bias voltage slightly greater than the avalanche breakdown voltage for calculation of the detection efficiency. Tunneling effect in the multiplication layer was taken into account for the dark count simulation. In the gated-mode operation, the avalanche build-up time also affects on the signal to noise ratio. The multiplication layer thickness is a key parameter for the device performances.

In transient analyzing of a crosstalk, the crosstalk waveform can be obtained with a commercial simulator such as SPICE simulation or FDTD (Finite Difference Time Domain) simulation. In case of using a simple model, a CMOS-IC load is considered as a constant capacitance load in crosstalk simulation. However, the semiconductor devices, such as CMOS-IC, have a characteristic of nonlinear impedance depending on the input voltage. We measured the far-end crosstalk of two parallel microstrip lines for a CMOS inverter (74HC04) load by changing the magnitude of the input step voltage. As the result, we found that the far-end crosstalk for the CMOS inverter load dose not necessarily depend on the input capacitance of the CMOS inverter.

The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.

Two types of p-i-n diode devices, namely an amplitude shift keying switch and a phase shift keying switch, were developed by using an NRD guide at 77 GHz. In order to apply these devices to radar systems, an SPDT switch with a low insertion loss of less than 2.5 dB and a high isolation of more than 25 dB was fabricated by using the former switch. Moreover, a BPSK modulator, composed of the latter switch together with a circulator and a ceramic resonator loaded band-pass filter, was designed and evaluated for use in spread spectrum radar systems in this frequency range.

Harmonic distortions of a recently developed lightweight film-type ESPAR (Electronically Steerable Passive Array Radiator) antenna are investigated experimentally. These distortions arise from the nonlinearity of the varactor diodes that are directly integrated with the parasitic radiator elements to control the antenna's radiation pattern. A reactive-near-field measurement technique that employs low-interference probes in an ultra-small anechoic box is used to reduce experimental time and cost. An anti-series varactor pair is introduced and compared with the conventional single varactor. Consequently, an ESPAR antenna equipped with the anti-series varactor pair exhibits remarkable suppression of nonlinear distortion. In particular, the second- and the third-order harmonic is reduced by approximately 20 dB and 12 dB from the level of a single varactor type ESPAR antenna, respectively.

Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.

We proposed the conduction mechanism of organic light-emitting diode (OLED) using a one-dimensional discontinuous model. We assumed that each emitting molecule corresponds to a hopping site according to the actual charge transfer between adjacent molecules. Both carrier mobility of Alq3 and barrier heights for each carrier were derived from experimental data. We calculate transient behavior of carrier, field, and exciton distribution. Both carrier injections assumed the Schottky injection. In the previous results, when we assumed that calculated current density fit the experimental one in the current density field curve, calculated light-emission intensity did not fit the experimental one in the light-emission field curve. Furthermore, the slope of the calculated light emission-field curve is too small to fit the experimental one. In the previous study, hopping distance was assumed to be 1 nm. In this study, it is assumed to be 1.7 nm. We consider that field dependence of electron injection is too weak to explain only the Schottky emission. When the electron injection is assumed to be both Schottky emission and Fowler-Nordheim emission calculated light-emission field as well as the current-density field curves were fit to the curve of each experimental characteristics.

Optical disk systems have been used in a wide range of applications and the performance of these systems has been improving rapidly. The optical integration is one of the important technologies of the progress of the optical pickup head in the system. It can make the optical pickup head miniature, light sized, ease to assemble, cost reduced and reliable during long time operation. In this paper, at first, merits and features of the optical integration for optical disk systems are briefly reviewed. Then, our activities on the development of the various hybrid-integrated optical devices, "Laser Couplers" are reported. Especially, the most recent results on the "Two-wavelength-beam Laser Coupler," are described in detail. It has two-wavelength laser emission/detection functions and easily realizes an ultimate solution of the optical pickup head for the DVD/CD system, now being used in "PlayStaion2. " To simplify the structure and the fabrication of this device, a new monolithic-integrated two-wavelength laser diode, called a visible and infrared laser diode, has been developed, which can be easily fabricated using only two steps of metal organic chemical vapor deposition. The structures and characteristics of this device are reported. Lastly, other recent technologies of the optical integration, including monolithically integration, near field optics and so on, are reviewed.

A novel base station for microwave radio-on-fiber systems is proposed. It consists of an L-band electroabsorption modulator and a uni-traveling-carrier photodiode. We show it is applicable for bias-free operation and full-duplex transmission and demonstrate 100-Mbit/s bidirectional data transmission in the 5-GHz band.

785 nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785 nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250 mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160 mW, 70 of the carbon doped LD is reduced by about 15% from that of zinc doped one. Highly reliable 160 mW pulsed operation is also realized at 70. This LD believed to be suited for the next generation high-speed (16-24x) CD-R drives necessitating 160 mW class LD.

Recent activities on ultrafast photonic device technology development in the Femtosecond Technology Project sponsored by NEDO are introduced. Topics include management and control of the higher order dispersions of optical fibers, ultrafast mode-locked semiconductor laser, symmetric Mach-Zehnder type all-optical switch, ultrafast serial-to-parallel signal converter and sub-picosecond wavelength switch. Challenges towards novel ultrafast switching material systems are also described.

The thermal response of a tunable laser is analyzed by using a mode density method based on a Fourier-Laplace analysis. This method introduces a mode density function for mode distribution of the Fourier-Laplace transform and gives temperature time-dependency in an integral form instead of an infinite weighted summation. When symmetric structures are assumed, the mode density method gives the transient thermal response in a simple form: error functions (spherical-symmetry case) and exponential integral functions (cylindrical-symmetry case). The cylindrical-symmetry analysis was extended to the noncylindrical-symmetry model and the thermal response of the tunable laser was calculated by the mode density method. The result shows good agreement with a Fourier-Laplace analysis (deviation 2%) and experimental results. As a rough estimation, the thermal response of the laser is in proportion to the logarithm of time in some range that depends on the chip and tuning-section size of the laser.

We propose a frequency stabilization system for laser diodes (LD's), in which the major parameters in the stabilization process can be controlled in respond to the monitored frequency noise characteristics in real-time basis. The performance of this system was also tested through stabilizing a 35 mW visible LD. The center frequency of the LD has been stabilized by negative electrical feedback based on Pound-Drever-Hall technique. The linewidth of the LD has been reduced by adapting optical feedback from resonant confocal Fabry-Perot (CFP) cavity. The controlling parameters, especially gain levels and frequency responses of the negative electrical feedback loop can be manipulated to remove the instantaneous frequency noise by monitoring power spectral density (PSD) of the frequency error signals in the real-time basis. The achieved PSD of frequency noise of a sample LD stabilized by the present system was less than 1105 Hz2/Hz for the Fourier frequency < 10 MHz. The reduced linewidth was estimated to be narrower than 400 kHz. The achieved minimum square root of the Allan variance was 3.910-11 at τ = 0.1 msec.

This paper describes the recent progress in the device performance of the uni-traveling-carrier photodiode (UTC-PD). The UTC-PD utilizes only electrons as the active carriers and this unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. The achieved performance includes a record 3-dB bandwidth (f3dB) of 310 GHz, a high output current over 180 mA with an f3dB of 65 GHz, a high linearity of up to 80 mA, and a zero-bias operation with an f3dB of 230 GHz and an output peak current of 6.8 mA.