This paper describes a 3.5 V operation InGaP HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900 MHz triple band handset applications. Conventional GSM amplifiers have a high linear gain of 40 dB or more to realize efficiency operation in large gain compression state exceeding at least 5 dB. On the other hand, an EDGE amplifier needs a linear operation to prevent signal distortion. This means that a high linear gain amplifier cannot be applied to the EDGE amplifier, because the high gain leads to the high noise power in the receive band (Rx-noise). In order to solve this problem, we have changed the linear gain of the amplifier between GSM and EDGE mode. In EDGE mode, the stage number of the amplifier changes from three to two. To reduce a high gain, the first stage transistors in the amplifier is bypassed through the diode switches. This newly proposed bypass circuit enables a high gain in GSM mode and a low gain in EDGE, thus allowing the amplifier to operate with high efficiency in both modes while satisfying the Rx-noise specification. In conclusion, with diode switches and a band select switch built on the MMIC, the module delivers a Pout of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4 dBm Pout and a 45% PAE for GSM1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -85 dBm/100 kHz, the module also delivers a 29.5 dBm Pout and a PAE of over 25% for EDGE900, a 28.5 dBm Pout and a PAE of over 25% for EDGE1800/1900.

Based on the Si CMOS process, a low operating voltage and low power light emitting device is presented. It has a power transfer efficiency of 1 to 2 orders higher than previous reports and can be used as a high efficiency photodiode. Configurations using the same structure as both the light emitter and the optical receiver, and employing a simple modulation instrument is then proposed for applications in the chip-to-chip optical alignment and the signal transmission. Only single power supply is required in the emitter-receiver circuits and is compatible with other integrated circuits made by the CMOS process.

A fully integrated broadband distributed frequency tripler, periodically loaded with HBV devices, has been designed and fabricated and has demonstrated the generation of a broad range of output frequencies of up to 570 GHz. Key to the design is the principle that the entire frequency tripler circuit is produced monolithically and incorporates novel HBV devices electrically and mechanically interconnected by a thin low-loss SU-8 membrane. With the device fabrication approach used, the novel HBV devices are able to produce a higher capacitance-voltage swing ratio whilst simultaneously minimizing the device series and contact resistances to achieve the optimum conversion efficiency. The entire concept of this work was to design a cost effective fully integrated waveguide package, with the frequency tripler circuit mounted at the E-plane of a micromachined waveguide which was constructed with stepped height and width to prevent the propagation of higher order modes inside the waveguide sections. The micromachined waveguide sections exhibit high dimensional accuracy and a good surface finish which is necessary for the efficient propagation of high frequency signals. The frequency tripler circuit and the accompanying micromachined waveguide sections are mounted in a specifically designed metal test fixture to form a compact and cost-effective subcomponent with great commercial potential for broadband harmonic generation of up to terahertz frequencies. This paper presents the design methodology and techniques used to produce the frequency tripler package, together with some initial measurement results.

We have implemented a distributed sensor system based on an array of fiber Bragg gratings (FBGs), which can measure up to 1000 points with a single piece of fiber. The system consists of FBGs having the same resonant wavelengths and small reflectivities (0.1 dB), and a wavelength tunable optical time-domain reflectometer (OTDR). To interrogate the distributed grating sensors and to address the event locations simultaneously, we have utilized the tunable OTDR. A thermoelectric temperature controller was used to tune the emission wavelength of the OTDR. The operating temperature of the laser diode was changed. By tuning the pulse wavelength of the OTDR, we could identify the FBGs whose resonant wavelengths were under change within the operating wavelength range of the DFB LD. A novel sensor cable with dry core structure and tensile cable was fabricated to realize significant construction savings at an industrial field and in-door and out-door applications. For experiments, a sensor cable having 52 gratings with 10 m separations was fabricated. To prevent confusion with unexpected signals from the front-panel connector zone of the OTDR, a 1 km buffer cable was installed in front of the OTDR. The proposed system could distinguish and locate the gratings that were under temperature variation from 20 to 70.

New diode structures without the field-oxide boundary across the p/n junction for ESD protection are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. The proposed N(P)MOS-bounded diodes can provide more efficient ESD protection to the internal circuits, as compared to the other diode structures. The N(P)MOS-bounded diodes can be used in the I/O ESD protection circuits, power-rail ESD clamp circuits, and the ESD conduction cells between the separated power lines. From the experimental results, the human-body-model ESD level of ESD protection circuit with the proposed N(P)MOS-bounded diodes is greater than 8 kV in a 0.35-µm CMOS process.

In this paper, we describe an accelerative current-programming method for active matrix OLED (AM-OLED) display. This new method uses common source configuration, "Acceleration Control" line and some mechanisms to prevent the programming current from flowing through OLED device. It would solve the basic problem of the current-programming pixel circuit: a long programming period, especially at the dark gray-level. The proposed method accelerates the current programming process at any gray levels, and it would be the solution for the problem.

In this paper, we have proposed to apply a combinatorial approach to investigate the Schottky diode based on electrochemically polymerized conjugated polymer. The concept of combinatorial approach was emerged in the biochemical field and lately used in the materials science to screen a number of experimental conditions efficiently. Some tips for designing the polymerization bath suitable for our purpose, such as the way to suppress the interference of polymerization currents, have been described. In the case of Schottky diodes based on poly (3-methylthiophene), the system chosen to test our idea, the effects of polymer thickness and the supporting salt on the device characteristics have been surveyed clearly and rapidly. The map or library of the relationship between the polymerization condition and device characteristic may be useful to tune the device characteristics as desired. Our preliminary result has shown that the combinatorial approach proposed here can be a powerful tool to investigate the conjugated polymer devices by electrochemical polymerization such as electrochromic devices.

A simple, novel and low cost optical device with the possibility of being integrated into a network of wireless sensors has been developed for the colorimetric detection of iron (II). The proposed device used is based on two light emitting diodes (LEDs) configured so that one acts as an emitter and the other as a light detector, and a simple threshold detection/timer circuit to measure the photocurrent at the detector LED. The colorimetric reaction is based on the chelating reaction of divalent iron with the ligand 1,10-phenanthroline. The calibration graph shows that the detection limit (DL) of iron (II) using this approach is 5 ppb with a RSD of 0.08%. All experiments were carried out in triplicate (N = 3). The effect of some cations on the determination of Fe (II) using the proposed method was also studied. Results found showed that the system is relatively free from interferences.

We have demonstrated improvement in the efficiency of TDAPB-based OLEDs. The external quantum efficiency of 8.2% and a power efficiency of 17.3 lm/W were achieved. The results suggest that using the starburst small-molecule TDAPB allows for easy fabrication and is effective for achieving high efficiencies in simple device structures.

We have determined the thickness and optical constants (refractive index and extinction coefficient) of each layer in the multi-layer organic light emitting diode (OLED) devices based on phosphorescent platinum octaethyl porphine (PtOEP) using a phase modulated spectroscopic ellipsometer. The thickness of each layer estimated from the ellipsometric measurement is different from the thickness measured with quartz oscillator during the evaporation of organic materials. The deviation of total multi-layer thickness is about 5%, while the deviation in each of N, N'-bis(1-naphtyl)-N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD) and aluminum tris 8-hydroxyquinoline (Alq3) layers is about 20-25%. Additionally the spectra of refractive index and extinction coefficient of Alq3 and α-NPD layers are different from those that are measured using the single layer films. These results are understood by penetration of organic material from the neighboring layers in the multi-layer structure devices.

Theoretical calculation has been done on the decay time of photoluminescence of Ir(ppy)3 dissolved in tetrahydrofuran and its temperature dependence at 1.2-300 K. Taking into account that the emitting triplet state consists of three zero-field splitting substates and taking into account one-phonon non-radiative transitions among these substates, the rate equations for the populations of these substates have been obtained. Three decay components are derived by solving not only the secular equation but also the rate equations, where the slow decay time shows decrease from 145 to 2 µs with increasing temperature from 1.2 to 300 K. A good agreement has been obtained for the temperature dependence between the calculated slow decay time and the observed one.

In this paper, a novel type of the step-up high frequency transformer linked full-bridge soft-switching phase-shift PWM DC-DC power converter with ZVS and ZCS bridge legs is proposed for small scale fuel cell power generation systems, automotive AC power supplies. A tapped inductor filter with a freewheeling diode is implemented in the proposed soft-switching DC-DC power converter to minimize the circulating current in the high-frequency step-up transformer primary side and high-frequency inverter stage. Using a tapped inductor filter with a freewheeling diode makes possible to reduce the circulating current without any active switches and theirs gate-drive circuits. The operating principle of the proposed DC-DC power converter with each operation mode during a half cycle of the steady state operation is explained. The optimum design of the tapped inductor turns ratio is described on the basis of the circuit simulation results. Developing 1 kW 100 kHz prototype with power MOSFETs and 36 V DC source verifies the practical effectiveness of the proposed soft-switching DC-DC power converter. The actual efficiency of the proposed DC-DC power converter is obtained 94% for the wide load and output voltage variation ranges.

Ultrahigh-speed compact flash analog-to-digital converters (ADCs) using resonant-tunneling diodes (RTDs) have been designed to demonstrate a high potential of RTD circuits. Novel multi-input subtraction gates are introduced to the encoder to obtain a compact circuit configuration. By assuming 0.1-µm InP-based RTD/HEMT technology, circuit simulations of 4-bit 10-GHz flash ADCs are carried out. It is found that the device counts of the ADC with an 8-input gate are one third that of the ADC with 4-input gates. This leads to a reduction in the power dissipation by 50%. In addition, bandwidths of more than 20 GHz have been obtained for 4-bit and 5-bit ADCs at a sampling frequency of 10 GHz.

Timing noise of 160 GHz optical pulses has been evaluated over nine decades of Fourier frequency using the optoelectronic harmonic mixing technique. For down-converting the 160 GHz pulse intensity into a low-frequency IF signal, the fourth order modulation sidebands produced by a Mach-Zehnder intensity modulator have been employed. Phase noise power spectral density and timing jitter for 155.552-GHz optical time-division multiplexed pulses and 160.640-GHz passively mode-locked pulses are measured using the time domain demodulation and time interval analysis techniques, respectively.

Electrical properties of contacts between head-tail coupled poly(3-hexylthiophene), PHT and Al (and Au) in planer type and sandwich type diodes of Al/PHT/Au have been studied. The contact resistances are directly evaluated by probing the potential profile of PHT between the metal electrodes using micromanipulators installed in scanning electron microscope. In the potential profile of planer type diode, a large potential cliff is observed at Al/PHT interface and some appreciable potential step is also found at PHT/Au interface. The contact resistance at the Al/PHT interface deduced from the potential profile shows the bias and its polarity dependence, indicating the existing of the Schottky like junction. At forward bias, it is found that the residual resistance at Al/PHT interface limits the diode performance. The residual resistance is supposed to be insulating layer of Al oxide. At larger reversed bias, the contact resistance at Al/PHT decreased abruptly due to the Zener breakdown. The potential profile of sandwich type diode is similar to that of planer type diode. It is found that even the PHT/Au contact shows the ohmic behavior, the contact resistance is significant as to limit the maximum current of the cells.

A device structure for polymer Schottky diode, which has the glass chimney as a dopant reservoir enabling the reduction of series resistance without cathode corrosion, has been proposed. Doping with the acetonitrile solution of FeCl3 in the device resulted in the increase in the forward-bias current by one order of magnitude without notable increase in reverse-bias current, suggesting that the doping reduced the series resistance. It is found that the penetration speed depends on the solvents. Short time doping with the nitromethane solution of FeCl3 resulted in the increase by three orders of magnitude. However, doping for a long period yielded the considerable increase in the reverse-bias current due to the complete penetration of dopatn solution. When the upper opening of glass chimney of device is left opened and the sample after doping stored in air, the forward-bias current of the device reduced rapidly due to the undoping and/or degradation of polymer. It is possible to protect the degradation of device characteristics after doping, by sealing the chimney and storing the device in vacuum.

A polarization switchable slot-coupled microstrip antenna using PIN diodes is proposed and studied. The microstrip feed line installed behind the ground plane is divided into two branches and each tip of the branches is connected to the ground plane through a PIN diode. One of the diodes is oriented from the tip to the ground plane and the other is oriented from the ground to the tip so that a slot in the ground can be selected to feed the patch by switching the dc bias between positive and negative. This selection contributes to switch the polarization between horizontal and vertical. In this paper, the authors investigate the polarization switching antenna theoretically and experimentally and confirmed sufficient differencce of antenna gain between horizontal and vertical polarization.

As new applications of THz waves emerge, new active and passive components need to be developed. The efficiency of wave guiding systems can be significantly increased with the use of MEMS approaches as well as with the development of new planar antenna concepts with high bunching properties. Generation of sufficient THz power relies on new active devices like Heterostructure Barrier Varactors and cascaded quantum structures, but also in the optimisation of new generation concepts. One of these is photomixing in non-linear materials with very short carrier lifetimes, like low-temperature-grown GaAs.

Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300 (530%, at 160 ppm CO in N2) and fast response comparable with SnO2 sensors. A two-region linear regime was observed for the dependence of sensitivity on CO concentration. GaN sensors on Si substrate offer the possibility of integration with Si based electronics. The gas sensors show slow response with time, the change of material properties possibly in the presence of large thermal stress.

We propose a frequency stabilization system for laser diodes (LDs), in which the electrical feedback loop response can be determined using an on-line genetic algorithm (GA) so as to attain lower LD frequency noise power within the specific Fourier frequency range of interest. At the initial stage of the stabilization, the feedback loop response has been controlled through GA, manipulating the proportional gain, integration time, and derivative time of conventional analog PID controller. Individuals having 12-bit chromosomes encoded by combinations of PID parameters have converged evolutionarily toward an optimal solution providing a suitable feedback loop response. A fitness function has been calculated for each individual in real time based on the power spectral density (PSD) of the frequency noise. The performance of this system has been tested by stabilizing a 50 mW visible LD. Long-term (τ > 0.01 s) frequency stability and its repeatability have been improved.