A radio-on-dense-wavelength-division-multiplexing (DWDM) transport system based on injection-locked Fabry-Perot laser diodes (FP LDs) with four microwave carriers and large effective area fiber (LEAF) transmission was proposed and demonstrated. Good performance of bit error rate (BER) and intermodulation distortion to carrier ratio (IMD/C) over a-50 km of LEAF was obtained. Signal quality meets the demands of personal handy system (PHS)/vehicle information and communication system (VICS)/electronic toll collection (ETC)/satellite broadcasting (SB).

LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.

A low-ripple diode charge-pump type AC-DC converter based on the Cockcroft-Walton diode multiplier is proposed for coil-coupled passive IC tags in this paper. This circuit is developed as a power supply for passive RFID tags with smart functions such as heart rate detection and/or body temperature measurement. The proposed circuit converts wirelessly induced power to a low-ripple DC voltage suitable for a 13.56 MHz RFID tag. The proposed circuit topology and the principle of operation are explained and treated theoretically by using quasi-equivalent small-signal models. The proposed circuit was implemented on a PCB. And it was confirmed that the proposed circuit provides 3.3 V DC with a ripple of less than 20 mV when a 4 Vp-p sinusoidal input is applied. Under this condition, the maximum output power is about 310 µW. The measured results were in good agreement with theoretical and HSPICE simulation results.

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850~900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 1011 cm-2 were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with η of 34.4% and FWHM of 27 nm were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 1616 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 44 SOI rearrangeable nonblocking TO switch matrix, rising and falling time is 970 and 750 ns, respectively.

Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate. Light emitting diodes (LEDs) and Si metal-oxide-semiconductor field effect transistors (MOSFETs), which are elemental devices for optoelectronic integrated circuits(OEICs), were monolithically integrated in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed process flow was based on a conventional MOSFET process flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective in the realization of monolithic OEICs.

This paper reviews and discusses devices, circuits, and signal processing techniques for CMOS imaging SoC's based on column-parallel processing architecture. The pinned photodiode technology improves the noise characteristics at the device level to be comparable to CCD image sensors and as a result, low-noise design in CMOS image sensors has been shifted to the reduction of noise at the circuit level. Techniques for reducing the circuit noise are discussed. The performance of the imaging SoC's greatly depends on that of the analog-to-digital converter (ADC) used at the column. Three possible architectures of the column-parallel ADC are reviewed and their advantage and disadvantage are discussed. Finally, a few applications of the device and circuit techniques and the column-parallel processing architecture are described.

This paper describes two different types of GaAs-HBT compatible, base-collector diode 0/20-dB step attenuators--diode-linearizer type and harmonics-trap type--for 3.5-GHz-band wireless applications. The two attenuators use an AC-coupled, stacked type diode switch topology featuring high power handling capability with low bias current operation. Compared to a conventional diode switch topology, this topology can improve the capability of more than 6 dB with the same bias current. In addition, successful incorporation of a shunt diode linearizer and second- and third-harmonic traps into the attenuators gives the IM3 distortion improvement of more than 7 dB in the high power ranging from 16 dBm to 18 dBm even in the 20-dB attenuation mode when IM3 distortion levels are basically easy to degrade. Measurement results show that both the attenuators are capable of delivering power handling capability (P0.2 dB) of more than 18 dBm with IM3 levels of less than -35 dBc at an 18-dBm input power while drawing low bias currents of 3.8 mA and 6.8 mA in the thru and attenuation modes from 0/5-V complementary supplies. Measured insertion losses of the linearizer-type and harmonics-trap type attenuators in the thru mode are as low as 1.4 dB and 2.5 dB, respectively.

Since Smart Antenna technology has powerful spatial processing ability; it is regarded as a promising approach to enhancing the data rates and capacity of wireless LAN systems. In this paper, a small size, practical switched-beam antenna system, well suited for domestic in-home networking in the 2.4 GHz band, is designed and tested. The system has the configuration of regular nine-prism, and nine 1/4 wavelength rectangular patches are symmetrically distributed on the nine sides of the prism. The switching process is based on control of the microstrip used to feed the patch radiators, by placing PIN diodes at the microstrip feeding lines. The antenna array can generate nine beams with a gain of 11 dB. All the beams generated by the system are cophasal excited and have a 40°beamwidth. Compared to the uniform array, the system can guarantee the consistency of every beam and is preferable in shape.

The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved.

This paper describes a CMOS voltage reference circuit which occupies small die area and has less than 1.25 V of output voltage. The reference voltage is determined by a resistor ratio, and it is possible to set the reference voltage from zero to near the supply voltage with the same temperature independence as those of Widlar's and Brokaw's bandgap voltage references. The temperature-independent reference voltage is formed by adding two voltages: the amplified fractional VBE (base-to-emitter voltage) of a bipolar transistor with a negative TC (temperature coefficient) and the amplified VT (thermal voltage) with a positive TC. When a reference voltage smaller than 1.25 V is required, the voltage gain of the amplifier for VBE becomes less than one, and the voltage gain of the amplifier for VT becomes small. This enables the size of bipolar transistors for VT generation to be small. The proposed voltage reference circuit was implemented in a standard 0.35-µm CMOS technology. A temperature-independent current source was also obtained from the same circuit. The results were a TC (temperature coefficient) of 46 ppm/ over 130 change, a line regulation of 2.2 mV/V for the 0.5 V reference voltage with 8.7 µA of current consumption in the voltage reference part, and a 6% change over 130 change for the 13 µA current source.

The uni-traveling-carrier photodiode (UTC-PD) is an innovative PD that has a unique operation mode in which only electrons act as the active carriers, resulting in ultrafast response and high electrical output power at the same time. This paper describes the features of the UTC-PD and its excellent performance. In addition, UTC-PD-based optoelectronic devices integrated with various elements, such as passive and active devices, are presented. These devices are promising for various applications, such as millimeter- and submillimeter-wave generation up to the terahertz range and ultrafast optical signal processing at data rates of up to 320 Gbit/s.

A micromirror for an external cavity diode laser is described. The mirror is supported by two sets of parallel torsion bars enabling piston motion as well as rotation. These motions are for realizing continuous wavelength tuning. Adjusting two rotations electrically, the pivot of the mirror rotation can be controlled. The long stroke of the vertical comb is realized by the deep three-dimensional structure prepared by the wafer bending method.

Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.

Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.

We have fabricated and investigated InGaAs Esaki tunnel diodes, grown on GaAs or InP substrates, of varied defect densities. The tunnel diodes exhibit the same I-V characteristics in spite of the variation of defect density. Under the simple thermal annealing and forward current stress tests, the change in the valley current was not observed, indicating that defects were not increased. On the other hand, the reduction in the peak current due to the carbon diffusion was observed under both tests. The diffusion was enhanced by the stress current owing to the energy dissipation associated with the nonradiative electron-hole recombination. From the reduction rates of the peak current, we obtained the thermal and current-enhanced carbon diffusion constants in InGaAs, which are independent of defect density. Although thermal diffusion of carbon in InGaAs is comparable with that in GaAs, the current-induced enhancement of diffusion in InGaAs is extremely weaker than that in GaAs. The difference between activation energy of thermal and current-enhanced diffusion is 0.8 eV, which is independent of stress current density and close to InGaAs bandgap energy. This indicates that the current-enhanced diffusion is dominated by the energy dissipation associated with nonradiative band-to-band recombination. This enhancement mechanism well explains that the current-induced enhancement is independent of defect density and extremely weak. We also have found that the current-enhanced diffusion constant is approximately proportional to the square of current density, suggesting that the recombination in the depletion layer dominates the current-enhanced diffusion.

We present room temperature current voltage characteristics from SiGe interband tunneling diodes epitaxially grown on highly resistive Si(001) substrates. In this case, a maximum peak to valley current ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe tunnel diode with a strained Si transistor lead us to investigate the growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual substrates. A careful optimization of the layer structure leads to a maximum PVCR of 1.36 at room temperature. The latter value can be further increased to 2.26 at 3.7 K. Our results demonstrate that high quality SiGe interband tunneling diodes can be realized, which is of great interest for future memory and high speed applications.

Pt Schottky diode gas sensors for carbon monoxide (CO) were fabricated using slightly Si doped bulk GaN grown on sapphire substrate. The influence of diode size, Pt thickness, operating temperature on gas sensitivity was investigated. CO sensitivity was improved six times by optimizing the size and thickness of the Pt contact. Surface restructuring and morphology changes of Pt film were observed after thermal annealing. These changes are enhanced as the film thickness is reduced further and contribute to improve CO sensitivity.

This paper introduces a new approach to realize a multi-state operation on the microwave isolator using ferrite edge-mode. The voltage control of total transmission on the isolator is realized. The operation is based on the unique property of ferrite edge-mode and the variable resistance of PIN diodes. On the isolator, the frequency response is investigated both experimentally and numerically. The numerical analysis is performed by the FDTD method. Both numerical and experimental results have shown that the transmission between two ports can be totally controlled by the applied voltage for the diodes. The experimental results indicate that the transmission direction can be controlled at 11 GHz, and the isolation ratio can be controlled for more than 30 dB.

The performance of avalanche photodiodes with deep guard rings for Geiger mode operation is studied. The electric field distribution is calculated using the finite element method and the carrier multiplication characteristic is calculated along typical lines in the device. The nonlinear dependence of the ionization rates on the electric field strength can make a guard ring less effective in Geiger mode operation. The maximum single photon detection efficiency that can be obtained without breakdown at the guard ring is calculated for several structure parameters. It is shown that the single photon detection efficiency strongly depends on the guard ring design.

White-light emitting diode lamps for general illumination can be realized by a combination of a blue light-emitting diode semiconductor die and phosphors. Newly developed oxynitride and nitride phosphors are promising candidates for this application because they have suitable excitation and emission wavelengths and stable optical properties in a high temperature environment. High brightness warm-white LED lamps have been realized using a yellowish-orange α-SiAlON oxynitride phosphor. High color-rendering index white LED lamps have been also realized using three color oxynitride/nitride phosphors.