We have studied the effect of Ga and Ca substitution in the PrBa2Cu3Oδ (PBCO) barrier on the parameters of high-temperature-superconductor ramp-edge Josephson junctions. Pr 1-XCa XBa2Cu3Oδ (X=0. 15, 0. 3) had reduced bulk barrier resistivity as small as 10 mΩcm which was close to the metal-insulator transition. Also, PrBa2Cu 3-ZGa ZOδ, written as GaZ-doped PBCO (Z=0. 15, 0. 3, 0. 6), had enhanced resistivity neater than 1 kΩcm at 4. 2 K. The transport mechanisms in these bulk barriers fitted well with the Mott variable hopping model. The critical current density Jc and normalized junction conductance (R nA)-1 decayed exponentially with almost the same decay length, as the barrier thickness increased. The decay length depended on the barrier material, and ranged from 1. 7 nm to 6. 5 nm for Jc, from 1. 9 nm to 7. 2 nm for (Rn A)-1. Because on these experimental results, we conclude that direct tunneling is the dominant transport mechanism for both quasi particles and paired particles in our junctions, while resonant tunneling should be considered as an additional transport mechanism of these two kinds of particles in the junctions with the PBCO-based barriers reported so far. It was also found that Ga doping raised the characteristic voltage Vc while Ca doping reduced it, though the Vc values obtained here were still small compared to the theoretically predicted values. The spacewise metal insulator transition at the interfaces caused by a high density of localized states in the barriers seemed to be responsible for the reduction in Vc. The best Vc value was 0. 32 mV at 77 K and 5. 2 mV at 4. 2 K using a Ga0. 6-PBCO barrier. These Vc values are suitable for electronics applications. Furthermore, superconducting-gap-like structures were observed in the junctions with highly resistive Ga-doped PBCO barriers.

In order to improve the running durability of organic electroluminescent devices (OELDs), the doping sites of molecular OELDs were optimized, and the frequency responses of the optimized devices were examined for Mg-In/bis (10-hydroxybenzo[h]quinolinate) beryllium (BeBq2)/N, N'-diphenyl-N, N'-(3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine (TPD)/4, 4', 4"-tris (3-methylphenylphenylamino) triphenylamine (MTDATA)/ITO. The TPD hole transport layer was the optimum doping site for 5, 6, 11, 12-tetraphenylnaphthacene (rubrene) dopant, and a very high efficiency of 13 cd/A at 0. 13 kcd/m2 was obtained for yellow emission. Half-decay times under a constant direct current density of 1. 0 mA/cm2 from an initial luminance of 0. 13 kcd/m2 extended to longer than 26,000 hours. The luminance of the optimized device decreases lineally with respect to the logarithm of the frequency as the frequency increases in the range from 1 kHz to 0. 3 MHz when a square wave with a duty ratio of 50% and a maximum voltage of 5.0 V is applied. A new driving method involving frequency modulation is proposed. This may offer accurate control of pixel luminance, and enable simple driving circuits adapted to highly integrated digital LSI chips, or the concept of system on glass.

The doping effect of acceptor molecule tetracyanoquinodimethane (TCNQ) and donor molecule tetramethyltetraselenafulvalene (TMTSF) in an organic semiconductor was investigated by field effect measurements in merocyanine (MC) films. The electrical conductivity and carrier concentration of TCNQ-doped MC films were increased compared with those of undoped MC film. An efficient doping effect was observed at the doping concentration of approximately 9%. The electrical conductivity, on the other hand, was decreased by doping of the donor molecule TMTSF in MC film. However, no inversion of the conduction type was obtained. Furthermore, the transport mechanism of TCNQ-doped MC film and undoped film was elucidated from the temperature dependence of electrical parameters. These results demonstrate that TCNQ and TMTSF molecules act as acceptor and donor impurities in MC film, respectively, and the doping of these molecules is effective to control the electrical properties of organic semiconductors.

The alloy of Ag (40wt%)-Pd(60wt%) has been used in the electrical contacts of electromechanical devices due to its superior contact properties. There is currently, an increasing trend to decrease the size of electromechanical devices. However, it has been difficult to obtain a high contact force and the high restoring force of contacts, and these problems cause contact failures such as high contact resistance. In response to this problem, the alloy is overlaid with an Au layer which is not affected by oxide films. However, when the contacts are subjected to an unacceptable amount of mechanical shock, adhesion of the Au overlay occurs easily. In order to solve these difficulties, it can be proposed to cover the contact surface with high electric conductive oxide films. With this concept, the Au overlay should be unnecessary. In the present study, to reduce the high contact resistance of the Ag-Pd alloy contaminated with an oxide film, very small amounts of Mg and Cr were used in separate doping trials to the alloy. The improvement of contact resistance characteristics is the focus of the present study. Specimens of Ag (40wt%)-Pd(60wt%), Ag-Pd-Mg(0.1, 0.5 and 1.0wt%), and Ag-Pd-Cr(0.1 and 0.5wt%) were oxidized at elevated temperatures to accelerate the process of oxidation, and the growth kinetic law of oxide films grown on the surfaces were evaluated by ellipsometry. The effect of the oxide film on the contact resistance characteristics were then clarified. A marked improvement of the contact resistance caused by the oxide film was found for the Ag-Pd alloy with a Mg doping agent. However, for the Cr doping agent, a low contact resistance was not obtained as same as the Ag-Pd alloy itself.

On account of its superior electrical contact performance, Ag (40wt%)-Pd(60wt%) alloy has been widely used to the electrical contacts of electromechanical devices. However, regarding small devices, some important difficulties arise due to the small size such as the degradation of the contact resistance caused by the oxide film grown on the surface. To solve these problems, it was reported previously that doping Mg and Cr into the Ag-Pd alloy was tried to improve the oxide film. As a result, the oxide film grown on the Ag-Pd-Mg surface exhibited a remarkably low contact resistance. However, for the oxide film on Ag-Pd-Cr, no improvement of the contact resistance was observed. In this study, to clarify the cause of the low contact resistance for Ag-Pd-Mg, the effect of the doping with a third element on the composition and formation of the oxide film was analyzed using electron diffractometry, XPS and STM. As a result, Ag was found to be distributed on the outermost surface and inside the oxide film formed on Ag-Pd-Mg. However, Ag was not found on the surface of and inside the oxide film formed on Ag-Pd-Cr. Therefore, it was concluded that the presence of Ag on the surface of and inside the oxide film reduces the resistivity of the film.

A 33-cm-Diagonal High-Resolution(1280 1024RGB, which stands for red, green, and blue) TFT-LCD with low, uniform parasitic capacitance between gate electrodes and source/drain electrodes has been developed using Fully Self-Aligned a-Si TFTs. The fabricated TFT-LCD shows no visible seams between block shot exposure regions, even in the display of gray images. In this paper, we describe(1) our full self-alignment technology for the TFTs, including the fabrication process and the technology for reducing OFF current in the TFTs under illumination, (2) SPICE simulation for estimating pixel voltage shift in the fabricated TFT-LCD, and (3) performance results for the fabricated TFT-LCD.

High-frequency capacitance-voltage (C-V) characteristics of buried-channel MOS capacitors with a structure of subquarter-micron pMOS have been measured and analyzed, emphasizing transient behavior. The C-V characteristics, including transient behavior, of buried-channel MOS capacitors that have a counter-doped p layer at the surface of n substrate are very similar to those of surface-channel MOS capacitors of n substrate if the counter-doped layer is shallow enough to be fully inverted at large positive bias. As gate voltage is decreased, equilibrium capacitance for inversion (accumulation for the counter-doped layer) reaches a minimum value and then slightly increases to saturate, which is peculiar to buried-channel capacitors. The gate voltage for minimum capacitance, which has been used to estimate the threshold voltage, changes dramatically by illumination even in room light. Net doping profiles of n-type dopant can be obtained from pulsed C-V characteristics even for buried-channel capacitors. For MOS capacitors with thinner gate oxide (5 nm), steady-state C-V curve is not an equilibrium one but a deep depletion one at room temperature. This is because holes are drained away by tunneling through the thin gate oxide.

We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.51020 cm-3, while for δ-doped layers the sheet hole density as high as 2.61013 cm-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.

This paper describes small AlGaAs/GaAs HBT's for low-power and high-speed integrated circuits. The device fabrication is based on a new bridged base electrode technology that permits emitter width to be defined down to 1 µm. The new technology features oxygen-ion implantation for emitter-base junction isolation and zinc diffusion for extrinsic base formation. The oxygen-ion implanted emitter-base junction edge has been shown to provide a periphery recombination current much lower than that for the previous proton implanted edgs, the result being a much higher current gain particularly in small devices. The zinc diffusion offers high device yield and good uniformity in device characteristics even for a very thin (0.04 µm) base structure. An HBT with emitter dimensions of 12.4 µm2 yields an fT of 103 GHz and an fmax of 62 GHz, demonstrating that the new technology has a significant advantage in reducing the parasitic elements of small devices. Fabricated one-by-eight static frequency dividers and one-by-four/one-by-five two-modulus prescalers operate at frequencies over 10 GHz. The emitters of HBT's used in the divider are 12.4 µm2 in size, which is the smallest ever reported for AlGaAs/GaAs HBT IC's. These results indicate that the bridged base electrode technology is promising for developing a variety of high-speed HBT IC's.

The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO2 film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.